Method for inspecting EUV reticle and apparatus thereof

1. A method for inspecting an extreme ultraviolet (EUV) reticle, comprising:

scanning an EUV reticle by using a scanning electron microscope (SEM) to get an image with a plurality of patterns thereon;

receiving an original design layout information to align the plurality of patterns; and

determining at least one defect directly according to the plurality of aligned patterns.

2. The method according to claim 1 , wherein the scanning step comprises:

conditioning surface charge of a surface of the EUV reticle by using a primary beam;

injecting a focused primary beam to the surface of the EUV reticle; and

receiving a secondary electron beam from the surface of the EUV reticle.

3. The method according to claim 2 , wherein landing energy of the primary beam, in the step of conditioning surface charge, is adjusted such that number of secondary electron from the secondary electron beam is equal to number of primary electrons from the primary beam.

4. The method according to claim 2 , wherein the primary beam, in the step of conditioning surface charge, is provided by a primary beam or a flood gun.

5. The method according to claim 2 , wherein the primary beam scans backward in the step of conditioning surface charge, and the focused primary beam scans forward in the step of injecting the focused primary beam.

6. The method according to claim 1 , wherein in the scanning step, the SEM uses a primary beam emitting primary electrons to condition surface charge of a surface of the EUV reticle, and uses a focused primary beam to scan the surface of the EUV reticle which emit secondary electrons to inspect the EUV reticle.

7. The method according to claim 6 , wherein the number of the primary electrons and the secondary electrons are substantially equal.

8. The method according to claim 6 , wherein the SEM is a swing objective retarding immersion lens (SORIL) SEM.

9. The method according to claim 1 , wherein the original design layout information comprises graphic data system (GDS) or open artwork system interchange standard (OASIS).

10. The method according to claim 1 , wherein the plurality of patterns comprise holes, circuits, devices, or any combination thereof.

11. A method for inspecting an extreme ultraviolet (EUV) reticle, comprising:

using a primary beam emitting primary electrons to condition surface charge of a surface of the EUV reticle;

using a focused primary beam to scan the surface of the EUV reticle which emits secondary electrons;

detecting the secondary electrons from the surface of the EUV reticle to get an image with a plurality of patterns thereon;

receiving an original design layout information to align the plurality of patterns; and

determining at least one defect according to the plurality of aligned patterns.

12. The method according to claim 11 , wherein the number of the primary electrons and the secondary electrons are substantially equal.

13. The method according to claim 11 , wherein the primary beam, in the step of conditioning surface charge, is provided by a primary beam or a flood gun.

14. The method according to claim 11 , wherein the primary beam scans backward in the step of conditioning surface charge, and the focused primary beam scans forward in the step of injecting the focused primary beam.

15. The method according to claim 11 , wherein the primary beam and the focused primary beam are provided by an SEM.

16. The method according to claim 15 , wherein the SEM is a swing objective retarding immersion lens (SORIL) SEM.

17. The method according to claim 11 , wherein the original design layout information comprises graphic data system (GDS) or open artwork system interchange standard (OASIS).

18. The method according to claim 11 , wherein the plurality of patterns comprise holes, circuits, devices, or any combination thereof.

19. A method for inspecting an extreme ultraviolet (EUV) reticle, comprising:

scanning an EUV reticle by using a scanning electron microscope (SEM) to get an image with a plurality of patterns thereon, wherein a retarding electrode, between an opening of an objective lens module, in the SEM is tuned to attract more secondary electrons emitted from the EUV reticle; and

determining at least one defect according to the plurality of the patterns.

20. The method according to claim 19 , wherein the scanning step comprises:

conditioning surface charge of a surface of the EUV reticle by using a primary beam;

injecting a focused primary beam to the surface of the EUV reticle; and

receiving a secondary electron beam comprising the secondary electrons from the surface of the EUV reticle.

21. The method according to claim 20 , wherein the primary beam, in the step of conditioning surface charge, is provided by a primary beam or a flood gun.

22. The method according to claim 20 , wherein the primary beam scans backward in the step of conditioning surface charge, and the focused primary beam scans forward in the step of injecting the focused primary beam.

23. The method according to claim 19 , wherein the SEM uses a primary beam emitting primary electrons to condition surface charge of a surface of the EUV reticle, and uses a focused primary beam to scan the surface of the EUV reticle which emits the secondary electrons to inspect the EUV reticle.

24. The method according to claim 23 , wherein the SEM is a swing objective retarding immersion lens (SORIL) SEM.

25. A method for inspecting an extreme ultraviolet (EUV) reticle, comprising:

conditioning surface charge of a surface of an EUV reticle by using a primary beam;

injecting a focused primary beam to the surface of the EUV reticle, wherein the focused primary beam is adjusted to produce a surface current density on the surface of the EUV reticle so that a reflectivity loss of the EUV reticle is controlled due to the surface current density; and

receiving a secondary electron beam from the surface of the EUV reticle.

26. The method according to claim 25 , wherein the primary beam, in the step of conditioning surface charge, is provided by a primary beam or a flood gun.

27. The method according to claim 25 , wherein the primary beam scans backward in the step of conditioning surface charge, and the focused primary beam scans forward in the step of injecting the focused primary beam.

28. The method according to claim 25 , wherein the primary beam and the focused primary beam are provided by an SEM.

29. A method for inspecting an extreme ultraviolet (EUV) reticle, comprising:

conditioning surface charge of a surface of an EUV reticle by using a primary beam;

injecting a focused primary beam to the surface of the EUV reticle, wherein the focused primary beam is adjusted to produce a surface current density on the surface of the EUV reticle, and the surface current density on the surface of the EUV reticle is less than a value of 2.5325 nA/nm 2 ; and

receiving a secondary electron beam from the surface of the EUV reticle.

30. The method according to claim 29 , wherein the primary beam, in the step of conditioning surface charge, is provided by a primary beam or a flood gun.

31. The method according to claim 29 , wherein the primary beam scans backward in the step of conditioning surface charge, and the focused primary beam scans forward in the step of injecting the focused primary beam.

32. The method according to claim 29 , wherein the primary beam and the focused primary beam are provided by an SEM.