Semiconductor device and manufacturing method thereof
An object is to reduce to reduce variation in threshold voltage to stabilize electric characteristics of thin film transistors each using an oxide semiconductor layer. An object is to reduce an off current. The thin film transistor using an oxide semiconductor layer is formed by stacking an oxide semiconductor layer containing insulating oxide over the oxide semiconductor layer so that the oxide semiconductor layer and source and drain electrode layers are in contact with each other with the oxide semiconductor layer containing insulating oxide interposed therebetween; whereby, variation in threshold voltage of the thin film transistors can be reduced and thus the electric characteristics can be stabilized. Further, an off current can be reduced.
1. A semiconductor device comprising:
a gate electrode layer;
a gate insulating layer over the gate electrode layer;
an oxide semiconductor layer over the gate insulating layer;
an oxide semiconductor layer containing insulating oxide over the oxide semiconductor layer; and
a source electrode layer and a drain electrode layer over the oxide semiconductor layer containing insulating oxide,
wherein the oxide semiconductor layer includes a crystal grain, and
wherein the oxide semiconductor layer containing insulating oxide is electrically connected to the source electrode layer and the drain electrode layer.
2. The semiconductor device according to claim 1 ,
wherein the insulating oxide is silicon oxide.
3. The semiconductor device according to claim 1 ,
wherein the crystal grain is 1 nm to 10 nm in diameter.
4. The semiconductor device according to claim 1 ,
wherein the oxide semiconductor layer and the oxide semiconductor layer containing insulating oxide each contain at least one of indium, tin, and zinc.
5. The semiconductor device according to claim 1 ,
wherein the oxide semiconductor layer has a region which is between the source electrode layer and the drain electrode layer and whose thickness is smaller than that of a region overlapped with the source electrode layer or the drain electrode layer.
6. The semiconductor device according to claim 1 ,
wherein a portion of the oxide semiconductor layer containing insulating oxide between the source electrode layer and the drain electrode layer is exposed.
7. The semiconductor device according to claim 1 ,
wherein a channel protective layer formed using an inorganic material is provided over the oxide semiconductor layer.
8. The semiconductor device according to claim 1 ,
wherein a width in a channel direction of the gate electrode layer is larger than that of either the oxide semiconductor layer containing insulating oxide or the oxide semiconductor layer.
9. The semiconductor device according to claim 1 ,
wherein a hollow is formed under an end portion of the oxide semiconductor layer containing insulating oxide.
10. The semiconductor device according to claim 1 ,
wherein an end portion of the oxide semiconductor layer is covered with the oxide semiconductor layer containing insulating oxide.
11. A semiconductor device comprising:
a gate electrode layer;
a gate insulating layer over the gate electrode layer;
an oxide semiconductor layer over the gate insulating layer;
an oxide semiconductor layer containing insulating oxide over the oxide semiconductor layer;
a buffer layer having n-type conductivity over the oxide semiconductor layer containing insulating oxide; and
a source electrode layer and a drain electrode layer over the buffer layer,
wherein the oxide semiconductor layer includes a crystal grain,
wherein a conductivity of the buffer layer is higher than that of the oxide semiconductor layer; and
wherein the oxide semiconductor layer containing insulating oxide is electrically connected to one of the source electrode layer and the drain electrode layer through the buffer layer.
12. The semiconductor device according to claim 11 ,
wherein the buffer layer includes an oxide semiconductor film which is non-single crystal.
13. The semiconductor device according to claim 11 ,
wherein the insulating oxide is silicon oxide.
14. The semiconductor device according to claim 11 ,
wherein the crystal grain is 1 nm to 10 nm in diameter.
15. The semiconductor device according to claim 11 ,
wherein the oxide semiconductor layer and the oxide semiconductor layer containing insulating oxide each contain at least one of indium, tin, and zinc.
16. The semiconductor device according to claim 11 ,
wherein the oxide semiconductor layer has a region which is between the source electrode layer and the drain electrode layer and whose thickness is smaller than that of a region overlapped with the source electrode layer or the drain electrode layer.
17. The semiconductor device according to claim 11 ,
wherein a portion of the oxide semiconductor layer containing insulating oxide between the source electrode layer and the drain electrode layer is exposed.
18. The semiconductor device according to claim 11 ,
wherein a channel protective layer formed using an inorganic material is provided over the oxide semiconductor layer.
19. The semiconductor device according to claim 11 ,
wherein a width in a channel direction of the gate electrode layer is larger than that of either the oxide semiconductor layer containing insulating oxide or the oxide semiconductor layer.
20. The semiconductor device according to claim 11 ,
wherein a hollow is formed under an end portion of the oxide semiconductor layer containing insulating oxide.
21. The semiconductor device according to claim 11 ,
wherein an end portion of the oxide semiconductor layer is covered with the oxide semiconductor layer containing insulating oxide.