IP Library › Granted Patent US 8,704,233
Granted Patent B2
US 8,704,233 · App. 13/829,922 · Granted Apr 22, 2014

Semiconductor device and method of manufacturing the same

Inventors: Shunpei Yamazaki (Tokyo, JP); Jun Koyama (Kanagawa, JP)
Assignee: Semiconductor Energy Laboratory Co., Ltd.
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Quick Facts
Patent No.
US 8,704,233
App. No.
13/829,922
Granted
Apr 22, 2014
Kind
B2
Abstract

The present invention improves the aperture ratio of a pixel of a reflection-type display device or a reflection type display device without increasing the number of masks and without using a blackmask. A pixel electrode ( 167 ) is arranged so as to partially overlap a source wiring ( 137 ) for shielding the gap between pixels from light, and a thin film transistor is arranged so as to partially overlap a gate wiring ( 166 ) for shielding a channel region of the thin film transistor from light, thereby realizing a high pixel aperture ratio.

Claims (132)

1. A semiconductor device comprising:

a pixel portion over a substrate, the pixel portion comprising:

a first electrode;

a semiconductor layer;

an insulating film over the first electrode, the insulating film comprising a contact hole;

a first conductive film over the insulating film, the first conductive film being electrically connected to the semiconductor layer;

a second conductive film over the first conductive film;

a third conductive film; and

a fourth conductive film over the insulating film; and

a terminal portion over the substrate, the terminal portion comprising:

a first wiring;

a second wiring over the first wiring; and

a third wiring over the second wiring,

wherein the semiconductor layer and the first electrode overlap with each other,

wherein the third conductive film, the first electrode and the first wiring comprise a same material,

wherein the second wiring and the first conductive film comprises a same material,

wherein the third wiring and the second conductive film comprise a same material,

wherein the second wiring is electrically connected to the first wiring through the contact hole of the insulating film,

wherein the third wiring is electrically connected to the second wiring,

wherein the third conductive film extends in a direction such that the third conductive film and the second conductive film do not overlap with each other,

wherein the fourth conductive film and the third conductive film overlap with each other,

wherein the fourth conductive film and the first electrode overlap with each other, and

wherein the second conductive film and the fourth conductive film is configured to generate an electric field substantially parallel to a surface of the substrate.

2. The semiconductor device according to claim 1 ,

wherein the third conductive film is electrically connected to the semiconductor layer.

3. The semiconductor device according to claim 1 ,

wherein the first electrode is over the semiconductor layer.

4. The semiconductor device according to claim 1 , further comprising a flexible printed circuit electrically connected to the third wiring,

wherein the third wiring comprises a region,

wherein the region and the second wiring overlap with each other, and

wherein the region and the flexible printed circuit.

5. An electronic appliance comprises the semiconductor device according to claim 1 and an operation switch.

6. A semiconductor device comprising:

a pixel portion over a substrate, the pixel portion comprising:

a first electrode;

a semiconductor layer;

an insulating film over the first electrode, the insulating film comprising a contact hole;

a first conductive film over the insulating film, the first conductive film being electrically connected to the semiconductor layer;

a second conductive film over the first conductive film;

a third conductive film; and

a fourth conductive film over the insulating film; and

a terminal portion over the substrate, the terminal portion comprising:

a first wiring;

a second wiring over the first wiring; and

a third wiring over the second wiring,

wherein the semiconductor layer and the first electrode overlap with each other,

wherein the third conductive film, the first electrode and the first wiring are formed by processing a same film,

wherein the second wiring and the first conductive film are formed by processing a same film,

wherein the third wiring and the second conductive film are formed by processing a same film,

wherein the second wiring is electrically connected to the first wiring through the contact hole of the insulating film,

wherein the third wiring is electrically connected to the second wiring,

wherein the third conductive film extends in a direction such that the third conductive film and the second conductive film do not overlap with each other,

wherein the fourth conductive film and the third conductive film overlap with each other,

wherein the fourth conductive film and the first electrode overlap with each other, and

wherein the second conductive film and the fourth conductive film is configured to generate an electric field substantially parallel to a surface of the substrate.

7. The semiconductor device according to claim 6 ,

wherein the third conductive film is electrically connected to the semiconductor layer.

8. The semiconductor device according to claim 6 ,

wherein the first electrode is over the semiconductor layer.

9. The semiconductor device according to claim 6 , further comprising a flexible printed circuit electrically connected to the third wiring,

wherein the third wiring comprises a region,

wherein the region and the second wiring overlap with each other, and

wherein the region and the flexible printed circuit.

10. An electronic appliance comprises the semiconductor device according to claim 6 and an operation switch.

11. A display device comprising:

a pixel portion over a substrate, the pixel portion comprising:

a liquid crystal;

a first electrode;

a semiconductor layer;

an insulating film over the first electrode, the insulating film comprising a contact hole;

a first conductive film over the insulating film, the first conductive film being electrically connected to the semiconductor layer;

a second conductive film over the first conductive film;

a third conductive film; and

a fourth conductive film over the insulating film; and

a terminal portion over the substrate, the terminal portion comprising:

a first wiring;

a second wiring over the first wiring; and

a third wiring over the second wiring,

wherein the semiconductor layer and the first electrode overlap with each other,

wherein the third conductive film, the first electrode and the first wiring comprise a same material,

wherein the second wiring and the first conductive film comprises a same material,

wherein the third wiring and the second conductive film comprise a same material,

wherein the second wiring is electrically connected to the first wiring through the contact hole of the insulating film,

wherein the third wiring is electrically connected to the second wiring,

wherein the third conductive film extends in a direction such that the third conductive film and the second conductive film do not overlap with each other,

wherein the fourth conductive film and the third conductive film overlap with each other,

wherein the fourth conductive film and the first electrode overlap with each other,

wherein the second conductive film and the fourth conductive film is configured to generate an electric field substantially parallel to a surface of the substrate, and

wherein the liquid crystal is controlled by the electric field.

12. The display device according to claim 11 ,

wherein the third conductive film is electrically connected to the semiconductor layer.

13. The display device according to claim 11 ,

wherein the first electrode is over the semiconductor layer.

14. The display device according to claim 11 , further comprising a flexible printed circuit electrically connected to the third wiring,

wherein the third wiring comprises a region,

wherein the region and the second wiring overlap with each other, and

wherein the region and the flexible printed circuit.

15. An electronic appliance comprises the display device according to claim 11 and an operation switch.

16. A display device comprising:

a pixel portion over a substrate, the pixel portion comprising:

a liquid crystal;

a first electrode;

a semiconductor layer;

an insulating film over the first electrode, the insulating film comprising a contact hole;

a first conductive film over the insulating film, the first conductive film being electrically connected to the semiconductor layer;

a second conductive film over the first conductive film;

a third conductive film; and

a fourth conductive film over the insulating film; and

a terminal portion over the substrate, the terminal portion comprising:

a first wiring;

a second wiring over the first wiring; and

a third wiring over the second wiring,

wherein the semiconductor layer and the first electrode overlap with each other,

wherein the third conductive film, the first electrode and the first wiring are formed by processing a same film,

wherein the second wiring and the first conductive film are formed by processing a same film,

wherein the third wiring and the second conductive film are formed by processing a same film,

wherein the second wiring is electrically connected to the first wiring through the contact hole of the insulating film,

wherein the third wiring is electrically connected to the second wiring,

wherein the third conductive film extends in a direction such that the third conductive film and the second conductive film do not overlap with each other,

wherein the fourth conductive film and the third conductive film overlap with each other,

wherein the fourth conductive film and the first electrode overlap with each other,

wherein the second conductive film and the fourth conductive film is configured to generate an electric field substantially parallel to a surface of the substrate, and

wherein the liquid crystal is controlled by the electric field.

17. The display device according to claim 16 ,

wherein the third conductive film is electrically connected to the semiconductor layer.

18. The display device according to claim 16 ,

wherein the first electrode is over the semiconductor layer.

19. The display device according to claim 16 , further comprising a flexible printed circuit electrically connected to the third wiring,

wherein the third wiring comprises a region,

wherein the region and the second wiring overlap with each other, and

wherein the region and the flexible printed circuit.

20. An electronic appliance comprises the display device according to claim 16 and an operation switch.

Priority Claims (1)
JP 2000-044973 · Feb 22, 2000 · national
Continuity (5)
Continuation 13071759 · Mar 25, 2011
Continuation 12498696 · Jul 7, 2009
Continuation 11287187 · Nov 28, 2005
Continuation 09773543 · Feb 2, 2001
Related Publication 20130207116A1 · Aug 15, 2013