IP Library Granted Patent US 8,704,243
Granted Patent B2
US 8,704,243 · App. 13/672,861 · Granted Apr 22, 2014

Light emitting device and manufacturing method thereof

Inventors: Shunpei Yamazaki (Setagaya, JP); Takeshi Noda (Atsugi, JP); Yoshinari Higaki (Higashihiroshima, JP)
Assignee: Semiconductor Energy Laboratory Co., Ltd.
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Quick Facts
Patent No.
US 8,704,243
App. No.
13/672,861
Granted
Apr 22, 2014
Kind
B2
Abstract

Disclosed is a light emission element including, on a substrate having an insulative surface, a first electrode connected with a thin film transistor and an insulator covering the end of the first electrode, a layer containing, an organic compound in contact with the first electrode, a second electrode in contact with the layer containing the organic compound. The first electrode has an inclined surface and the inclined surface reflects emitted light from the layer containing the organic compound. Further, a light absorbing multi-layered film absorbing external light is disposed on the portion of the first electrode covered with the insulator. The light absorbing multi-layered film comprising at least has a three-layered structure comprising a light transmitting film, a film partially absorbing light and a light transmitting film.

Claims (61)

1. A display device comprising:

a transistor;

a first insulating layer over the transistor;

a first electrode over the first insulating layer;

an oxide layer over the first electrode;

a second insulating layer covering a peripheral portion of the first electrode and the oxide layer;

a layer comprising an organic material over the first electrode, the oxide layer and the second insulating layer; and

a second electrode over the layer comprising the organic material,

wherein a thickness of the first electrode in a region covered by the second insulating layer is larger than a thickness of the first electrode in a region which is not covered by the second insulating layer,

wherein the oxide layer has an opening in a region exposed from the second insulating layer,

wherein a side surface of the oxide layer is in contact with the second insulating layer,

wherein a source or a drain of the transistor is electrically connected to the first electrode, and

wherein the layer comprising the organic material is capable of emitting light.

2. The display device according to claim 1 , wherein the first electrode comprises a layer containing aluminum and layer containing titanium.

3. The display device according to claim 2 , wherein the layer containing aluminum and the oxide layer are in contact with the layer comprising the organic material.

4. The display device according to claim 1 , further comprising a light-transmitting substrate over the second electrode and a colored layer on the light-transmitting substrate.

5. The display device according to claim 1 , wherein the oxide layer comprises any one of Al 2 O 3 , SiO 2 , ZrO 2 , HfO 2 , Sc 2 O 3 , TiO 2 , ITO and ZnO.

6. A display module comprising the display device according to claim 1 and FPC hooded to the display device.

7. A head mount display comprising: the display device according to claim 1 and an arm portion.

8. A display device comprising:

a transistor;

a first insulating layer over the transistor;

a first electrode over the first insulating layer and having a depression portion;

an oxide layer over a top surface of the first electrode except the depression portion;

a second insulating layer covering the top surface of the first electrode except the depression portion;

a layer comprising an organic material over the first electrode and the second insulating layer; and

a second electrode over the layer comprising the organic material,

wherein the first electrode comprising a layer containing aluminum,

wherein the layer containing aluminum is in contact with the layer comprising the organic material in the depression portion,

wherein the oxide layer is in contact with the layer comprising the organic material,

wherein a side surface of the oxide layer is in contact with the second insulating layer,

wherein the first electrode at the center of the depression portion is thinner than the first electrode at an edge of the depression portion,

wherein a source or as drain of the transistor is electrically connected to the first electrode, and

wherein the layer comprising the organic material is capable of emitting light.

9. The display device according to claim 8 , wherein the first electrode further comprises a layer containing titanium.

10. The display device according to claim 8 , further comprising a light-transmitting substrate over the second electrode and a colored layer on the light-transmitting substrate.

11. The display device according to claim 8 , wherein the oxide layer comprises any one of Al 2 O 3 , SiO 2 , ZrO 2 , HfO 2 , Sc 2 O 3 , TiO 2 , ITO and ZnO.

12. A display module comprising the display device according to claim 8 and FPC bonded to the display device.

13. A head mount display comprising: the display device according to claim 8 and an arm portion.

14. A display device comprising:

a pixel, the pixel comprising:

a first transistor;

a second transistor;

a first insulating layer over the first transistor and the second transistor;

a first electrode over the first insulating layer;

an oxide layer over the first electrode;

a second covering a peripheral portion of the first electrode and the oxide layer;

a layer comprising an organic material over the first electrode, the oxide layer and the second insulating layer; and

a second electrode over the layer comprising the organic material,

wherein as thickness of the first electrode in a region covered by the second insulating layer is larger than a thickness of the first electrode in a region which is not covered by the second insulating layer,

wherein the oxide layer has an opening in a region exposed from the second insulating layer,

wherein is side surface of the oxide layer is in contact with the second insulating layer,

wherein a source or a drain of the first transistor is electrically connected to it gate of the second transistor,

wherein a source or a drain of the second transistor is electrically connected to the first electrode, and

wherein the layer comprising the organic material is capable of emitting light.

15. The display device according to claim 14 , wherein the first electrode comprises a layer containing aluminum and a layer containing titanium.

16. The display device according to claim 15 , wherein the layer containing aluminum and the oxide layer are in contact with the layer comprising the organic material.

17. The display device according to claim 14 , further comprising a light-transmitting substrate over the second electrode and a colored layer on the light-transmitting substrate.

18. The display device according to claim 14 , wherein the oxide layer comprises any one of Al 2 O 3 , SiO 2 , ZrO 2 , HfO 2 , Sc 2 O 3 , TiO 2 , ITO and ZnO.

19. A display module comprising the display device according to claim 14 and FPC bonded to the display device.

20. A head mount display comprising: the display device according to claim 14 and an arm portion.

Priority Claims (1)
JP 2002-167758 · Jun 7, 2002 · national
Continuity (3)
Continuation 13035029 · Feb 25, 2011
Continuation 10454124 · Jun 4, 2003
Related Publication 20130140536A1 · Jun 6, 2013