Thermal management of stacked semiconductor chips with electrically non-functional interconnects
A method of manufacturing is provided that includes fabricating a first plurality of electrically functional interconnects on a front side of a first semiconductor chip and fabricating a first plurality of electrically non-functional interconnects on a back side of the first semiconductor chip. Additional chips may be stacked on the first semiconductor chip.
1. A method of manufacturing, comprising:
fabricating a first plurality of electrically functional interconnects on a front side of a first semiconductor chip; and
fabricating a first plurality of electrically non-functional interconnects on a back side of the first semiconductor chip, each of the electrically non-functional interconnects including a dummy pad that does not extend through to the front side of the first semiconductor chip.
2. The method of claim 1 , comprising fabricating a second plurality of electrically functional interconnects on the back side of the first semiconductor chip.
3. The method of claim 2 , wherein each of the second electrically functional interconnects comprises a first micro bump.
4. The method of claim 3 , wherein each of second electrically functional interconnects comprises a second micro bump bonded to the first micro bump.
5. The method of claim 2 , comprising stacking a second semiconductor chip on the first semiconductor chip, the second semiconductor chip having a front side facing the back side of the first semiconductor chip and a back side.
6. The method of claim 5 , wherein each of second electrically functional interconnects comprises a first micro bump projecting from the back side of the first semiconductor chip and a second micro bump projecting from the front side of the second semiconductor chip and being bonded to the first micro bump.
7. The method of claim 1 , comprising mounting the first semiconductor chip on a substrate.
8. The method of claim 7 , wherein the substrate comprises a semiconductor chip.
9. The method of claim 1 , wherein the electrically non-functional interconnects comprise micro bumps.
10. A method of manufacturing, comprising:
stacking a first semiconductor chip on a second semiconductor chip, the first semiconductor chip having a front side facing a back side of the second semiconductor chip, the second semiconductor chip having a front side, the back side of the second semiconductor chip having plural electrically non-functional interconnects, each of the electrical non-functional interconnects including a dummy pad that does not extend through to the front side of the second semiconductor chip;
electrically connecting the first and second semiconductor chips with plural electrically functional interconnects between the front side of the first semiconductor chip and the back side of the second semiconductor chip; and
depositing an insulating material between the first and second semiconductor chips to establish thermal contact with plural electrically non-functional interconnects.
11. The method of claim 10 , comprising stacking a third semiconductor chip on the first semiconductor chip.
12. The method of claim 10 , wherein each of the electrically functional interconnects comprises a first micro bump projecting from the back side of the second semiconductor chip and a second micro bump projecting from the front side of the first semiconductor chip and being bonded to the first micro bump.
13. The method of claim 10 , comprising mounting the second semiconductor chip on a substrate.
14. The method of claim 13 , wherein the substrate comprises a semiconductor chip.
15. The method of claim 10 , wherein the electrically non-functional interconnects comprise micro bumps.
16. An apparatus, comprising:
a first semiconductor chip having a front side and a back side; and
a first plurality of electrically functional interconnects on the front side and first plurality of electrically non-functional interconnects on the back side, each of the electrically non-functional interconnects including a dummy pad that does not extend through to the front side.
17. The apparatus of claim 16 , comprising a second plurality of electrically functional interconnects on the back side.
18. The apparatus of claim 17 , wherein each of the second electrically functional interconnects comprises a first micro bump.
19. The apparatus of claim 18 , wherein each of second electrically functional interconnects comprises a second micro bump bonded to the first micro bump.
20. The apparatus of claim 17 , comprising a second semiconductor chip stacked on the first semiconductor chip, the second semiconductor chip having a front side facing the back side of the first semiconductor chip and a back side.
21. The apparatus of claim 20 , wherein each of second electrically functional interconnects each of second electrically functional interconnects comprises a first micro bump projecting from the back side of the first semiconductor chip and a second micro bump projecting from the front side of the second semiconductor chip and being bonded to the first micro bump.
22. The apparatus of claim 16 , comprising a substrate, the first semiconductor chip being mounted on the substrate.
23. The apparatus of claim 22 , wherein the substrate comprises a semiconductor chip.
24. The apparatus of claim 16 , wherein the electrically non-functional interconnects comprise micro bumps.