Polishing composition
A polishing composition that allows polishing speed to be increased and surface roughness to be reduced is provided. The polishing composition according to the present invention includes a compound including at least an oxyethylene group or an oxypropylene group in a block polyether represented by the following general formula (1), a basic compound, and abrasives: >N—R—N< (1) where R represents an alkylene group expressed as C n H 2n and “n” is an integer not less than 1.
1. A polishing composition, comprising:
a compound including an alkylamine structure having two nitrogen atoms represented by the following general formula (1) and at least one block polyether bonded to one of the two nitrogen atoms in the alkylamine structure, the block polyether including an oxyethylene group and an oxypropylene group;
a basic compound; and
abrasives,
>N—R—N< (1)
where R represents an alkylene group expressed by C n H 2n and “n” is an integer not less than 1,
wherein said basic compound is at least one selected from a quaternary ammonium and a salt thereof, a primary amine, a secondary amine, and a tertiary amine and
a content of the compound is not less than 0.00001% and less than 10% by weight of the total amount of the polishing composition.
2. The polishing composition according to claim 1 , wherein said abrasives are at least one selected from silicon dioxide, alumina, ceria, and zirconia.
3. The polishing composition according to claim 1 , further comprising a water-soluble polymer compound.
4. The polishing composition according to claim 1 , wherein said block polyether includes at least one selected from ether groups expressed by the following general formulas (2) to (5):
-[(EO) a -(PO) b]x -H (2)
-[(PO) b -(EO) a]x -H (3)
-(EO) a -[(PO) b -(EO) a]x -H (4)
(PO) b -[(EO) a -(PO) b]x -H (5)
where EO represents an oxyethylene group, PO represents an oxypropylene group, and “a”, “b”, and “x” each represents an integer not less than 1.
5. The polishing composition according to claim 4 , wherein the number “a” of the oxyethylene groups in said ether group is not less than 1 and not more than 500 and the number “b” of the oxypropylene groups is not less than 1 and not more than 200.
6. The polishing composition according to claim 4 , wherein when said block polyether includes at least one selected from the ether groups expressed by said general formulas (2) to (5),
a mass ratio EO:PO between the oxyethylene groups and the oxypropylene groups in said ether group is not less than 10:90 and not more than 80:20.