Pattern forming method using developer containing organic solvent and rinsing solution for use in the pattern forming method

1. A pattern forming method, comprising:

(i) a step of forming a resist film from a resist composition for organic solvent-based development, the resist composition containing (A) a resin capable of increasing the polarity of the resin (A) by an action of an acid to decrease the solubility of the resin (A) in an organic solvent-containing developer, (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, and (C) a solvent;

(ii) an exposure step;

(iii) a development step using an organic solvent-containing developer; and

(iv) a washing step using a rinsing solution,

wherein in the step (iv), a rinsing solution containing at least the following solvent S2 is used:

Solvent S2 is a dialkyl ether having at least either an alkyl group having a carbon number of from 5 to 8 or a cycloalkyl group having a carbon number of from 5 to 8.

2. The pattern forming method according to claim 1 , wherein the resin (A) contains a repeating unit represented by the following formula (pA):

wherein R represents a hydrogen atom, a halogen atom or a linear or branched alkyl group having a carbon number of 1 to 4, and each R may be the same as or different from every other R;

A represents a single bond, an alkylene group, an ether bond, a thioether bond, a carbonyl group, an ester bond, an amido bond, a sulfonamido bond, a urethane bond, a ureylene bond or a combination of two or more of these groups and bonds; and

Rp 1 represents a group represented by any one of the following formulae (pI) to (pV):

wherein R 11 represents a methyl group, an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group, an isobutyl group or a sec-butyl group;

Z represents an atomic group necessary for forming a cycloalkyl group together with the carbon atom;

each of R 12 to R 16 independently represents a linear or branched alkyl group having a carbon number of 1 to 4 or a cycloalkyl group, provided that at least one of R 12 to R 14 and either one of R 15 and R 16 represent a cycloalkyl group;

each of R 17 to R 21 independently represents a hydrogen atom, a linear or branched alkyl group having a carbon number of 1 to 4 or a cycloalkyl group, provided that at least one of R 17 to R 21 represents a cycloalkyl group and that either one of R 19 and R 21 represents a linear or branched alkyl group having a carbon number of 1 to 4 or a cycloalkyl group; and

each of R 22 to R 25 independently represents a hydrogen atom, a linear or branched alkyl group having a carbon number of 1 to 4 or a cycloalkyl group, provided that at least one of R 22 to R 25 represents a cycloalkyl group, and R 23 and R 24 may combine with each other to form a ring.

3. The pattern forming method according to claim 1 , wherein the resin (A) contains a repeating unit represented by the following formula (IX) having neither a hydroxyl group nor a cyano group:

wherein R 5 represents a hydrocarbon group having at least one cyclic structure and having neither a hydroxyl group nor a cyano group; and

Ra represents a hydrogen atom, an alkyl group or a —CH 2 —O—Ra 2 group in which Ra 2 represents an alkyl group or an acyl group.

4. A method for manufacturing an electronic device, comprising the pattern forming method according to claim 1 .

5. A pattern forming method, comprising:

(i) a step of forming a resist film from a resist composition for organic solvent-based development, the resist composition containing (A) a resin capable of increasing the polarity of the resin (A) by an action of an acid to decrease the solubility of the resin (A) in an organic solvent-containing developer, (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, and (C) a solvent;

(ii) an exposure step;

(iii) a development step using an organic solvent-containing developer; and

(iv) a washing step using a rinsing solution,

wherein in the step (iv), a rinsing solution containing both the following solvent S1 and the solvent S2 is used:

Solvent S1 is an alcohol having a carbon number of at least 5 and having an alkyl chain containing at least either a branched or cyclic structure, with a secondary or tertiary carbon atom in the alkyl chain being bonded to a hydroxyl group; and

Solvent S2 is a dialkyl ether having at least either an alkyl group having a carbon number of at least 5 or a cycloalkyl group having a carbon number of at least 5;

wherein the rinsing solution satisfies the condition that the ratio by mass of solvent S1/solvent S2 is from 50/50 to 80/20.

6. The pattern forming method according to claim 5 , wherein the resin (A) contains a repeating unit represented by the following formula (pA):

wherein R represents a hydrogen atom, a halogen atom or a linear or branched alkyl group having a carbon number of 1 to 4, and each R may be the same as or different from every other R;

A represents a single bond, an alkylene group, an ether bond, a thioether bond, a carbonyl group, an ester bond, an amido bond, a sulfonamido bond, a urethane bond, a ureylene bond or a combination of two or more of these groups and bonds; and

Rp 1 represents a group represented by any one of the following formulae (pI) to (pV):

wherein R 11 represents a methyl group, an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group, an isobutyl group or a sec-butyl group;

Z represents an atomic group necessary for forming a cycloalkyl group together with the carbon atom;

each of R 12 to R 16 independently represents a linear or branched alkyl group having a carbon number of 1 to 4 or a cycloalkyl group, provided that at least one of R 12 to R 14 and either one of R 15 and R 16 represent a cycloalkyl group;

each of R 17 to R 21 independently represents a hydrogen atom, a linear or branched alkyl group having a carbon number of 1 to 4 or a cycloalkyl group, provided that at least one of R 17 to R 21 represents a cycloalkyl group and that either one of R 19 and R 21 represents a linear or branched alkyl group having a carbon number of 1 to 4 or a cycloalkyl group; and

each of R 22 to R 25 independently represents a hydrogen atom, a linear or branched alkyl group having a carbon number of 1 to 4 or a cycloalkyl group, provided that at least one of R 22 to R 25 represents a cycloalkyl group, and R 23 and R 24 may combine with each other to form a ring.

7. The pattern forming method according to claim 5 , wherein the resin (A) contains a repeating unit represented by the following formula (IX) having neither a hydroxyl group nor a cyano group:

wherein R 5 represents a hydrocarbon group having at least one cyclic structure and having neither a hydroxyl group nor a cyano group; and

Ra represents a hydrogen atom, an alkyl group or a —CH 2 —O—Ra 2 group in which Ra 2 represents an alkyl group or an acyl group.

8. A method for manufacturing an electronic device, comprising the pattern forming method according to claim 5 .

9. A pattern forming method, comprising:

(i) a step of forming a resist film from a resist composition for organic solvent-based development, the resist composition containing (A) a resin capable of increasing the polarity of the resin (A) by an action of an acid to decrease the solubility of the resin (A) in an organic solvent-containing developer, (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, and (C) a solvent;

(ii) an exposure step;

(iii) a development step using an organic solvent-containing developer; and

(iv) a washing step using a rinsing solution,

wherein in the step (iv), a rinsing solution containing at least the following solvent S1 is used:

Solvent S1 is any one of 3-methyl-2-pentanol, 3-methyl-3-pentanol, 4-methyl-2-pentanol, 4-methyl-3-pentanol and

2-methyl-2-pentanol.

10. The pattern forming method according to claim 9 , wherein the solvent S1 is 4-methyl-2-pentanol.

11. The pattern forming method according to claim 9 , wherein the resin (A) contains a repeating unit represented by the following formula (pA):

wherein R represents a hydrogen atom, a halogen atom or a linear or branched alkyl group having a carbon number of 1 to 4, and each R may be the same as or different from every other R;

A represents a single bond, an alkylene group, an ether bond, a thioether bond, a carbonyl group, an ester bond, an amido bond, a sulfonamido bond, a urethane bond, a ureylene bond or a combination of two or more of these groups and bonds; and

Rp 1 represents a group represented by any one of the following formulae (pI) to (pV):

wherein R 11 represents a methyl group, an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group, an isobutyl group or a sec-butyl group;

Z represents an atomic group necessary for forming a cycloalkyl group together with the carbon atom;

each of R 12 to R 16 independently represents a linear or branched alkyl group having a carbon number of 1 to 4 or a cycloalkyl group, provided that at least one of R 12 to R 14 and either one of R 15 and R 16 represent a cycloalkyl group;

each of R 17 to R 21 independently represents a hydrogen atom, a linear or branched alkyl group having a carbon number of 1 to 4 or a cycloalkyl group, provided that at least one of R 17 to R 21 represents a cycloalkyl group and that either one of R 19 and R 21 represents a linear or branched alkyl group having a carbon number of 1 to 4 or a cycloalkyl group; and

each of R 22 to R 25 independently represents a hydrogen atom, a linear or branched alkyl group having a carbon number of 1 to 4 or a cycloalkyl group, provided that at least one of R 22 to R 25 represents a cycloalkyl group, and R 23 and R 24 may combine with each other to form a ring.

12. The pattern forming method according to claim 9 , wherein the resin (A) contains a repeating unit represented by the following formula (IX) having neither a hydroxyl group nor a cyano group:

wherein R 5 represents a hydrocarbon group having at least one cyclic structure and having neither a hydroxyl group nor a cyano group; and

Ra represents a hydrogen atom, an alkyl group or a —CH 2 —O-Ra 2 group in which Ra 2 represents an alkyl group or an acyl group.

13. A method for manufacturing an electronic device, comprising the pattern forming method according to claim 9 .

14. A rinsing solution for organic solvent-based development, which is used for a resist composition for organic solvent-based development, the rinsing solution comprising at least the following solvent S2:

Solvent S2 is a dialkyl ether having at least either an alkyl group having a carbon number of from 5 to 8 or a cycloalkyl group having a carbon number of from 5 to 8.

15. The rinsing solution for organic solvent-based developing according to claim 14 , wherein the water content in the rinsing solution is 30 mass % or less.

16. A rinsing solution for organic solvent-based development, which is used for a resist composition for organic solvent-based development, the rinsing solution comprising both the following solvent S1 and the solvent S2:

Solvent S1 is an alcohol having a carbon number of at least 5 and having an alkyl chain containing at least either a branched or cyclic structure, with a secondary or tertiary carbon atom in the alkyl chain being bonded to a hydroxyl group; and

Solvent S2 is a dialkyl ether having at least either an alkyl group having a carbon number of at least 5 or a cycloalkyl group having a carbon number of at least 5;

and satisfying the condition that the ratio by mass of solvent S1/solvent S2 is from 50/50 to 80/20.

17. The rinsing solution for organic solvent-based developing according to claim 16 , wherein the water content in the rinsing solution is 30 mass % or less.

18. A rinsing solution for organic solvent-based development, which is used for a resist composition for organic solvent-based development, the rinsing solution comprising at least the following solvent S1:

Solvent S1 is any one of 3-methyl-2-pentanol, 3-methyl-3-pentanol, 4-methyl-2-pentanol, 4-methyl-3-pentanol and 2-methyl-2-pentanol.

19. The rinsing solution for organic solvent-based developing according to claim 18 , wherein the solvent S1 is 4-methyl-2-pentanol.

20. The rinsing solution for organic solvent-based developing according to claim 18 , wherein the water content in the rinsing solution is 30 mass % or less.