Integrated circuit with electromagnetic intrachip communication and methods for use therewith
An integrated circuit includes a substrate and a first integrated circuit die having a first circuit coupled to the substrate via a first bonding wire, the first circuit having a first intra-chip interface. A second integrated circuit die has a second circuit coupled to the substrate via a second bonding wire, the second circuit having a second intra-chip interface, the second bonding wire electrically isolated from the first bonding wire. The first circuit communicates with the second circuit via the first intra-chip interface and the second intra-chip interface, and wherein the first intra-chip interface and the second intra-chip interface communicate via a first electromagnetic coupling between the first bonding wire and the second bonding wire.
1. A method comprising:
interfacing a first circuit of a first integrated circuit die to a second circuit of a second integrated circuit die via a first electromagnetic coupling between a first bonding wire that couples the first circuit to a substrate and a second bonding wire that couples the second circuit to the substrate;
wherein the first integrated circuit die is stacked onto the second integrated circuit die and the second bonding wire is electrically isolated from the first bonding wire.
2. The method of claim 1 wherein the first electromagnetic coupling includes an inductive coupling between the first bonding wire and the second bonding wire.
3. The method of claim 1 wherein the first electromagnetic coupling includes a capacitive coupling between the first bonding wire and the second bonding wire.
4. The method of claim 1 wherein the first electromagnetic coupling includes an RF millimeter wave coupling between the first bonding wire and the second bonding wire.
5. The method of claim 1 wherein the interfacing includes, in a first mode of operation, communicating via an RF millimeter wave coupling between the first bonding wire and the second bonding wire; and
wherein the interfacing includes, in a second mode of operation, communicating via a capacitive coupling between the first bonding wire and the second bonding wire.
6. The method of claim 5 wherein the interfacing includes initiating a first trial communication via the first mode of operation and a second trial communication via the second mode of operation and selecting one of: the first mode of operation, and the second mode of operation, based on first results of the first trial communication and second results of the second trial communication.
7. The method of claim 1 wherein the interfacing includes, in a first mode of operation, communicating via an RF millimeter wave coupling between the first bonding wire and the second bonding wire; and
wherein the interfacing includes, in a second mode of operation, communicating via an inductive coupling between the first bonding wire and the second bonding wire.
8. The method of claim 1 wherein the interfacing includes initiating a first trial communication via the first mode of operation and a second trial communication via the second mode of operation and selecting one of: the first mode of operation, and the second mode of operation, based on first results of the first trial communication and second results of the second trial communication.
9. The method of claim 1 wherein the interfacing includes, in a first mode of operation, communicating via an inductive coupling between the first bonding wire and the second bonding wire; and
wherein the interfacing includes, in a second mode of operation, communicating via a capacitive coupling between the first bonding wire and the second bonding wire.
10. The method of claim 1 wherein the interfacing includes initiating a first trial communication via the first mode of operation and a second trial communication via the second mode of operation and selecting one of: the first mode of operation, and the second mode of operation, based on first results of the first trial communication and second results of the second trial communication.
11. The method of claim 1 wherein the first circuit is further coupled to the substrate via a third bonding wire, wherein the second circuit is further coupled to the substrate via a fourth bonding wire, wherein the fourth bonding wire is electrically isolated from the third bonding wire; and wherein interfacing further includes:
communicating via a second electromagnetic coupling between the third bonding wire and the fourth bonding wire.
12. The method of claim 11 wherein the first electromagnetic coupling is via one of: an inductive coupling, a capacitive coupling, and a millimeter wave RF coupling;
wherein the second electromagnetic coupling is via one of: an inductive coupling, a capacitive coupling, and a millimeter wave RF coupling; and
wherein the first electromagnetic coupling differs from the second electromagnetic coupling.
13. A method comprising:
interfacing a first circuit of an integrated circuit to a second circuit of the integrated circuit via a first electromagnetic coupling between a first bonding wire that couples the first circuit to a substrate and a second bonding wire that couples the second circuit to the substrate;
wherein the first circuit is stacked onto the second circuit and the second bonding wire is electrically isolated from the first bonding wire.
14. The method of claim 13 wherein the first electromagnetic coupling includes an inductive coupling between the first bonding wire and the second bonding wire.
15. The method of claim 13 wherein the first electromagnetic coupling includes a capacitive coupling between the first bonding wire and the second bonding wire.
16. The method of claim 13 wherein the first electromagnetic coupling includes an RF millimeter wave coupling between the first bonding wire and the second bonding wire.
17. The method of claim 13 wherein the interfacing includes, in a first mode of operation, communicating via an RF millimeter wave coupling between the first bonding wire and the second bonding wire; and
wherein the interfacing includes, in a second mode of operation, communicating via a capacitive coupling between the first bonding wire and the second bonding wire.
18. The method of claim 17 wherein the interfacing includes initiating a first trial communication via the first mode of operation and a second trial communication via the second mode of operation and selecting one of: the first mode of operation, and the second mode of operation, based on first results of the first trial communication and second results of the second trial communication.
19. The method of claim 13 wherein the interfacing includes, in a first mode of operation, communicating via an RF millimeter wave coupling between the first bonding wire and the second bonding wire; and
wherein the interfacing includes, in a second mode of operation, communicating via an inductive coupling between the first bonding wire and the second bonding wire.
20. The method of claim 13 wherein the interfacing includes initiating a first trial communication via the first mode of operation and a second trial communication via the second mode of operation and selecting one of: the first mode of operation, and the second mode of operation, based on first results of the first trial communication and second results of the second trial communication.
21. The method of claim 13 wherein the interfacing includes, in a first mode of operation, communicating via an inductive coupling between the first bonding wire and the second bonding wire; and
wherein the interfacing includes, in a second mode of operation, communicating via a capacitive coupling between the first bonding wire and the second bonding wire.
22. The method of claim 13 wherein the interfacing includes initiating a first trial communication via the first mode of operation and a second trial communication via the second mode of operation and selecting one of: the first mode of operation, and the second mode of operation, based on first results of the first trial communication and second results of the second trial communication.
23. The method of claim 13 wherein the first circuit is further coupled to the substrate via a third bonding wire, wherein the second circuit is further coupled to the substrate via a fourth bonding wire, wherein the fourth bonding wire is electrically isolated from the third bonding wire; and wherein interfacing further includes:
communicating via a second electromagnetic coupling between the third bonding wire and the fourth bonding wire.
24. The method of claim 13 wherein the first electromagnetic coupling is via one of: an inductive coupling, a capacitive coupling, and a millimeter wave RF coupling;
wherein the second electromagnetic coupling is via one of: an inductive coupling, a capacitive coupling, and a millimeter wave RF coupling; and
wherein the first electromagnetic coupling differs from the second electromagnetic coupling.
25. A method comprising:
interfacing a first circuit of an integrated circuit to a second circuit of the integrated circuit via a first electromagnetic coupling between a first bonding wire that couples the first circuit to a substrate and a second bonding wire that couples the second circuit to the substrate;
wherein the first circuit is stacked onto the second circuit and the second bonding wire is electrically isolated from the first bonding wire; and
wherein at least one of the first circuit and the second circuit include components of a wireless interface device for communication with an external network.