Area efficient through-hole connections
View Patent ↗Using printing technologies to fill conductor materials into holes in silicon substrate, the preferred embodiments of the present improve cost efficiency of through-hole connections. Using silicon substrate as cathode terminal during electrical plating that fill holes in a silicon substrate with conductors, the preferred embodiments of the present improve alignment accuracy and cost efficiency of through-hole manufacturing processes.
1. A method for providing electrical connection(s) through a silicon substrate, comprising the steps of:
opening a hole into the silicon substrate; depositing electrical insulator material(s) inside the hole in the silicon substrate; Patterning one or more hole(s) inside the insulator material(s) inside the hole in the silicon substrate; printing electrical conductor material(s) into the hole(s) inside the insulator material(s); using the dried-ink conductor material(s) formed using the printed electrical conductor material(s) as part of or all of the conductor material(s) for providing electrical connection(s) from a front surface to a back surface of the silicon substrate;
wherein the step of, depositing the electrical insulator material inside the hole in the silicon substrate comprising a step of depositing developed photo-resist material(s) as the electrical insulator material for insulating the silicon substrate and the conductor material(s) inside the hole.
2. The Method in claim 1 wherein the step of opening a hole into the silicon substrate comprises a step of opening a through-hole extending from the front surface to the back surface of the silicon substrate.
3. The method in claim 1 wherein the step of opening a hole into the silicon substrate comprises a step of opening a hole penetrating partially through the silicon substrate when the hole is opened.
4. The method in claim 1 wherein the step of printing electrical conductor material(s) comprises a step of using screen printing to print electrical conductor material(s) into the hole(s) opened through the insulator material(s).
5. The method in claim 1 wherein the step of printing electrical conductor material(s) comprises a step of using inkjet printing to print electrical conductor material(s) into the hole(s) opened through the insulator material(s).
6. The method in claim 1 comprises a step of patterning two or more holes opened through the insulator material(s) filled inside the hole in the silicon substrate.
7. The method in claim 1 wherein the step of opening a hole into the silicon substrate comprises a step of opening the hole by applying a dicing process.
8. The method in claim 1 wherein the step of opening a hole into the silicon substrate comprises a step of opening the hole by applying a LASER cutting process.
9. A method for providing electrical connection(s) through a silicon substrate, comprising the steps of: opening a hole into the silicon substrate; depositing electrical insulator material(s) inside the hole in the silicon substrate; Patterning one or more hole(s) inside the insulator material(s) inside the hole in the silicon substrate, wherein the silicon substrate is exposed at the bottom of the hole(s); filling conductor material(s) into the hole(s) inside the insulator material(s) by electroplating, using a dried-ink conductor materials wherein the silicon substrate exposed at the bottom of the hole(s) provides cathode connection(s) for the electroplating process(es); using the conductor material(s) filled by electroplating as part(s) of the conductor material(s) that provide electrical connection(s) from the front surface to the back surface of the silicon substrate; and
wherein the step of, depositing the electrical insulator material inside the hole in the silicon substrate comprising a step of depositing developed photo-resist material(s) as the electrical insulator material for insulating the silicon substrate and the conductor material(s) inside the hole.
10. The method in claim 9 comprises a step of patterning two or more holes opened through the insulator material(s) filled inside the hole in the silicon substrate.
11. The method in claim 9 wherein the step of opening a hole into the silicon substrate comprises a step of opening the hole by applying a dicing process.
12. The method in claim 9 wherein the step of opening a hole into the silicon substrate comprises a step of opening the hole by applying a LASER cutting process.