Mask and pattern forming method
According to one embodiment, a mask used with an exposure apparatus is disclosed. The mask includes a main pattern, and a sub-pattern having a dimension smaller than a resolution limit of the exposure apparatus. The sub-pattern is arranged next to the main pattern. The sub-pattern includes a first sub-pattern arranged next to the main pattern, and second sub-patterns contacting the first sub-pattern and arranged along a longitudinal direction of the first sub-pattern. The sub-patterns satisfy a condition of P≦λ/(NA(1+σ0)). Where P is a pitch of the second sub-patterns, NA is a numerical aperture of the exposure apparatus, λ and σ0 are respectively exposure wave length and maximum σ when the main pattern by using the exposure apparatus.
1. A mask used with an exposure apparatus for implementing a pattern forming on a substrate, the mask comprising:
a main pattern corresponding to a pattern to be formed on the substrate; and
a sub-pattern which has a dimension smaller than a resolution limit of the exposure apparatus and which is arranged next to the main pattern,
the sub-pattern comprising
a first sub-pattern arranged next to the main pattern and having a longitudinal direction, and
a plurality of second sub-patterns configured to contact the first sub-pattern and configured to be arranged along the longitudinal direction of the first sub-pattern,
and the sub-pattern is configured to satisfy a condition of P≦λ/(NA(1+σ 0 )), where P is an arrangement pitch of the plurality of second sub-patterns, NA is a numerical aperture of the exposure apparatus, λ is an exposure wavelength when the main pattern is transferred by using the exposure apparatus and σ 0 is maximum σ when the main pattern is transferred by using the exposure apparatus.
2. The mask according to claim 1 , wherein the main pattern comprises a line pattern,
the first sub-pattern has a line form,
the plurality of second sub-patterns have rectangular forms,
the first sub-pattern is arranged next to the line pattern such that the longitudinal direction of the first sub-pattern is coincident with a longitudinal direction of the line pattern,
one side of each of the plurality of second sub-patterns contacts a long side of the first sub-pattern, and the plurality of second sub-patterns are arranged along the longitudinal direction of the first sub-pattern.
3. The mask according to claim 1 , wherein the exposure apparatus is configured to perform a dipole illumination, or an orthogonal illumination.
4. The mask according to claim 1 , wherein the plurality of second sub-patterns are configured to enhance mechanical strength of the first sub-pattern subjected to physical cleaning.
5. The mask according to claim 4 , wherein number and layout positions of the plurality of second sub-patterns are determined to enhance the mechanical strength of the first sub-pattern subjected to the physical cleaning.
6. The mask according to claim 1 , wherein the main pattern comprises a device pattern.
7. The mask according to claim 1 , wherein the main pattern comprises a dummy pattern.
8. The mask according to claim 1 , wherein the sub-pattern is an SRAF (Sub Resolution Assist Feature) pattern.
9. The mask according to claim 1 , wherein the main pattern comprises a first line pattern,
the first sub-pattern comprises a second line pattern whose width is smaller than that of the first line pattern, the second line pattern is arranged next to the first line pattern to have a same longitudinal direction as the longitudinal direction of the first line pattern,
the plurality of second sub-patterns comprises a plurality of first rectangular patterns and a plurality of second rectangular patterns,
the plurality of first rectangular patterns contact one long side of the second line pattern and the plurality of first rectangular patterns are arranged along the longitudinal direction of the second line pattern, and
the plurality of second rectangular patterns contact the other long side of the second line pattern and the plurality of second rectangular patterns are arranged along the longitudinal direction of the second line pattern.
10. The mask according to claim 1 , wherein the main pattern comprises a first line pattern,
the first sub-pattern comprises a second line pattern whose width is smaller than that of the first line pattern, the second line pattern is arranged next to the first line pattern to have a same longitudinal direction as the longitudinal direction of the first line pattern,
the plurality of second sub-patterns comprises a plurality of rectangular patterns,
the plurality of rectangular patterns contact one long side of the second line pattern and the plurality of rectangular patterns are arranged along the longitudinal direction of the second line pattern.
11. The mask according to claim 1 , wherein the main pattern comprises a first line pattern,
the first sub-pattern comprises a second line pattern whose width is smaller than that of the first line pattern, the second line pattern is arranged next to the first line pattern to have a same longitudinal direction as the longitudinal direction of the first line pattern,
the plurality of second sub-patterns comprise a plurality of rectangular patterns, the second line pattern has a first long side that faces the first line pattern and a second long side on an opposite side of the first long side,
the plurality of rectangular patterns contact the second long side of the second line pattern and the plurality of rectangular patterns are arranged along the longitudinal direction of the second line pattern.
12. The mask according to claim 1 , wherein the main pattern comprises a first line pattern,
the first sub-pattern comprises a second line pattern whose width is smaller than that of the first line pattern, the second line pattern is arranged next to the first line pattern to have a same longitudinal direction as the longitudinal direction of the first line pattern,
the plurality of second sub-patterns comprise a plurality of rectangular patterns,
the second line pattern has a first long side that faces the first line pattern and a second long side on an opposite side of the first long side,
the plurality of rectangular patterns contact the first long side and the plurality of rectangular patterns are arranged along the longitudinal direction of the second line pattern.
13. The mask according to claim 1 , wherein the main pattern comprises a first line pattern,
the first sub-pattern comprises a second line pattern whose width is smaller than that of the first line pattern, the second line pattern is arranged next to the first line pattern to have the same longitudinal direction as the longitudinal direction of the first line pattern,
the plurality of second sub-patterns comprises a plurality of rectangular patterns,
the second line pattern has a first long side that faces the first line pattern and a second long side on an opposite side of the first long side,
the plurality of first rectangular patterns contact the first long side and the plurality of first rectangular patterns are arranged along the longitudinal direction of the second line pattern,
the plurality of second rectangular patterns contact the second long side and the plurality of second rectangular patterns are arranged along the longitudinal direction of the second line pattern,
and the first and second rectangular patterns are alternately arranged along the longitudinal direction of the second line pattern.
14. A pattern forming method comprising:
exposing a resist film on a substrate by using a mask;
forming a resist pattern by developing the exposed resist film; and
etching the substrate by using the resist pattern as a mask,
the mask comprising:
a main pattern corresponding to a pattern to be formed on the substrate; and
a sub-pattern which has a dimension smaller than a resolution limit of the exposure apparatus and which is arranged next to the main pattern,
the sub-pattern comprising
a first sub-pattern arranged next to the main pattern and having a longitudinal direction, and
a plurality of second sub-patterns configured to contact the first sub-pattern and configured to be arranged along the longitudinal direction of the first sub-pattern,
and the sub-pattern is configured to satisfy a condition of P≦λ/(NA(1+σ 0 )), where P is an arrangement pitch of the plurality of second sub-patterns, NA is a numerical aperture of the exposure apparatus, λ is an exposure wavelength when the main pattern is transferred by using the exposure apparatus and σ 0 is maximum σ when the main pattern is transferred by using the exposure apparatus.
15. The pattern forming method according to claim 14 , wherein the substrate comprises a conductive film, and the etching the substrate results in forming a pattern comprising the conductive film.
16. The pattern forming method according to claim 15 , wherein the conductive film is a semiconductor film or a metal film.
17. The pattern forming method according to claim 15 , wherein the pattern comprising the conductive film is an electrode pattern, or a wiring pattern.
18. The pattern forming method according to claim 14 , wherein the substrate comprises an insulating film, and the etching the substrate results in forming a contact pattern penetrating the insulation film, or forming a gate insulating film comprising the insulating film.
19. The pattern forming method according to claim 14 , wherein the substrate comprises a semiconductor substrate, and the etching the substrate results in forming a trench.
20. The pattern forming method according to claim 14 , wherein the exposure apparatus is configured to perform a dipole illumination, or an orthogonal illumination.