Method of manufacturing magnetic memory

1. A method of manufacturing a magnetic memory, the method comprising:

forming a first magnetic layer having a variable magnetization;

forming a tunnel barrier layer on the first magnetic layer;

forming a second magnetic layer on the tunnel barrier layer, the second magnetic layer having an invariable magnetization;

forming a hard mask layer as a mask on the second magnetic layer;

patterning at least one part of the second magnetic layer in a patterning area which is not covered with the hard mask so as to leave all or one part of the first magnetic layer in the patterning area, by an etching using the mask; and

changing the first magnetic layer in the patterning area to a magnetically and electrically inactive area by executing a GCIB-irradiation using the mask, after the patterning.

2. The method of claim 1 ,

wherein a size of a magnetically and electrically active area in the first magnetic layer is smaller than that in the second magnetic layer by the GCIB-irradiation.

3. The method of claim 1 ,

wherein a magnetization direction of the first and second magnetic layers is perpendicular to a film surface.

4. The method of claim 1 ,

wherein clusters using the GCIB-irradiation comprise one of the group of N 2 O, O, N, F, Cl, Ru, Si, B, C, Zr, Tb, Ti, P and As.

5. The method of claim 1 ,

wherein N×A>1×10 17 cm −2 ,

where N is a total number of clusters using the GCIB-irradiation, and A is an average atomic number of clusters.

6. The method of claim 1 ,

wherein an upper portion of the second magnetic layer in an area not covered by the hard mask layer has a taper shape by the patterning.

7. The method of claim 1 ,

wherein a side wall portion of each of the hard mask layer and the second magnetic layer has a taper shape.

8. The method of claim 1 ,

wherein the GCIB-irradiation comprises a first irradiation and a second irradiation after the first irradiation, and conditions of the first and second irradiations is different from each other.

9. The method of claim 8 ,

wherein an energy per atom of clusters using the first irradiation is larger than that of clusters using the second irradiation.

10. The method of claim 8 ,

wherein clusters using the first irradiation comprise one of N 2 O, O, N, F, Cl, Ru, Si, B, C, Zr, Tb, Ti, P and As, and clusters using the second irradiation comprise inactive atoms.

11. The method of claim 10 ,

wherein the inactive atoms includes one of Ar, Kr and Xe.

12. The method of claim 10 ,

wherein the inactive atoms includes Ne.

13. The method of claim 1 , wherein

the executing GCIB-irradiation comprises:

forming a high-resistance area in at least the first magnetic layer, and

etching the high-resistance area after the forming the high-resistance area,

wherein the etching the high-resistance area is executed by changing conditions of the forming the high-resistance area.

14. The method of claim 1 , further comprising

forming a nonmagnetic layer on the second magnetic layer in an area which is etched by the patterning, after the patterning.

15. The method of claim 1 , wherein

the executing GCIB-irradiation comprises:

forming a nonmagnetic layer on the second magnetic layer in an area which is etched by the patterning, and

forming a high-resistance area in at least the first magnetic layer after the forming the nonmagnetic layer.

16. The method of claim 14 ,

wherein the nonmagnetic layer comprises a material selected from a group of Ru, Si, B, C, Zr, Tb, Ti, P, As and Mg, or an oxide, a nitride or a fluoride of the material.

17. The method of claim 1 ,

wherein the tunnel barrier layer and the first magnetic layer are not etched by the patterning.

18. The method of claim 1 ,

wherein the tunnel barrier layer and the first magnetic layer are etched in part by the patterning.

19. The method of claim 18 ,

wherein an upper portion of the tunnel barrier layer and the first magnetic layer in an area not covered by the hard mask layer has a taper shape by the patterning.

20. A method of manufacturing a magnetic memory, the method comprising:

forming a first magnetic layer having a variable magnetization;

forming a tunnel barrier layer on the first magnetic layer;

forming a second magnetic layer on the tunnel barrier layer, the second magnetic layer having an invariable magnetization;

forming a hard mask layer as a mask on the second magnetic layer;

patterning the second magnetic layer, the tunnel barrier layer and the first magnetic layer by using the mask of the hard mask layer; and

executing a GCIB-irradiation by using the mask of the hard mask layer, after the patterning,

wherein clusters using the GCIB-irradiation comprise inactive atoms.

21. The method of claim 20 ,

wherein the inactive atoms includes one of Ar, Kr and Xe.

22. The method of claim 20 ,

wherein the inactive atoms includes Ne.

23. The method of claim 20 ,

wherein a size of a magnetic and electric active area in the first magnetic layer is smaller than that in the second magnetic layer by the GCIB-irradiation.

24. The method of claim 20 ,

wherein a magnetization direction of the first and second magnetic layers is perpendicular to a film surface.

25. The method of claim 20 ,

wherein a gas of the clusters includes one of O and N.

26. The method of claim 1 , wherein

the executing GCIB-irradiation comprises forming a high-resistance area in at least the first magnetic layer, and

the high-resistance area is etched by a monomer ion beam after the GCIB-irradiation.