Thin-film transistor and thin-film diode having amorphous-oxide semiconductor layer
A thin-film transistor including a channel layer being formed of an oxide semiconductor transparent to visible light and having a refractive index of nx, a gate-insulating layer disposed on one face of the channel layer, and a transparent layer disposed on the other face of the channel layer and having a refractive index of nt, where there is a relationship of nx>nt. A thin-film transistor including a substrate having a refractive index of no, a transparent layer disposed on the substrate and having a refractive index of nt, and a channel layer disposed on the transparent layer and having a refractive index of nx, where there is a relationship of nx>nt>no.
1. A thin-film transistor comprising:
a channel layer being formed of an oxide semiconductor transparent to visible light, the channel layer having a refractive index of nx; and
a transparent layer disposed in contact with the channel layer and having a refractive index of nt,
wherein the transparent layer is disposed in a light-incident side with respect to the channel layer and there is a relationship of nx>nt,
wherein the channel layer is formed of an amorphous oxide having a composition represented by the following formula:
[(Sn 1 - x M4 x )O 2 ] a .[(In 1 - y M3 y ) 2 O 3 ] b .[(Zn 1 - z M2 z O)] c
wherein 0≦x≦1, 0≦y≦1, 0≦z≦1, 0≦a≦1, 0≦b≦1, 0≦c≦1, and a+b+c=1;
M4 is a Group 4 element having an atomic number less than that of Sn selected from the group consisting of Si, Ge, and Zr;
M3 is Ga; and
M2 is a Group 2 element having an atomic number less than that of Zn selected from the group consisting of Mg and Ca.
2. The thin-film transistor according to claim 1 , further comprising:
a substrate disposed in contact with the transparent layer on the side opposite the channel layer and having a refractive index of no,
wherein there is a relationship of nx>nt>no.
3. The thin-film transistor according to claim 1 , wherein the refractive index nx of the channel layer or the refractive index nt of the transparent layer changes continuously or stepwise in the film thickness direction.
4. The thin-film transistor according to claim 1 , wherein a film thickness d of the transparent layer having a refractive index of nt is defined by the following equation:
d=k /(4 ×nt )
wherein k is the wavelength of light.
5. The thin-film transistor according to claim 1 , wherein the transparent layer is formed of an amorphous oxide having a composition represented by the following formula:
[(Sn 1 - x M4 x )O 2 ]a .[(In 1 - y M3 y ) 2 O 3 ]b .[(Zn 1 - z M2 z O)] c
wherein 0≦x≦1, 0≦y≦1, 0≦z≦1, 0≦a≦1, 0≦b≦1, 0≦c≦1, and a+b+c=1;
M4 is a Group 4 element having an atomic number less than that of Sn selected from the group consisting of Si, Ge, and Zr;
M3 is Lu or a Group 3 element having an atomic number less than that of In selected from the group consisting of B, Al, Ga, and Y; and
M2 is a Group 2 element having an atomic number less than that of Zn selected from the group consisting of Mg and Ca.
6. A display device comprising a light-emitting element and a thin-film transistor for driving the light-emitting element, wherein the thin-film transistor comprises:
a channel layer being formed of an oxide semiconductor transparent to visible light, the channel layer having a refractive index of nx; and
a transparent layer disposed in contact with the channel layer and having a refractive index of nt,
wherein the transparent layer is disposed in a light-incident side with respect to the channel layer and there is a relationship of nx>nt.
7. The display device according to claim 6 , wherein the thin-film transistor further comprises:
a substrate disposed in contact with the transparent layer on the side opposite the channel layer and having a refractive index of no,
wherein there is a relationship of nx>nt>no.
8. The display device according to claim 6 , wherein the refractive index nx of the channel layer or the refractive index nt of the transparent layer changes continuously or stepwise in the film thickness direction.
9. The display device according to claim 6 , wherein a film thickness d of the transparent layer having a refractive index of nt is defined by the following equation:
d=k /(4 ×nt )
wherein k is the wavelength of light.
10. The display device according to claim 6 , wherein the thin-film transistor further comprises:
a substrate; and
a gate-insulating layer disposed in contact with the substrate and having a refractive index of ni,
wherein the channel layer is disposed in contact with the gate-insulating layer, and there is a relationship of ni>nx>nt.
11. The display device according to claim 6 , wherein the transparent layer is formed of an amorphous oxide having a composition represented by the following formula:
[(Sn 1 - x M4 x )O 2 ]a .[(In 1 - y M3 y ) 2 O 3 ]b .[(Zn 1 - z M2 z O)] c
wherein 0≦x≦1, 0≦y≦1, 0≦z≦1, 0≦a≦1, 0≦b≦1, 0≦c≦1, and a+b+c=1;
M4 is a Group 4 element having an atomic number less than that of Sn selected from the group consisting of Si, Ge, and Zr;
M3 is Lu or a Group 3 element having an atomic number less than that of In selected from the group consisting of B, Al, Ga, and Y; and
M2 is a Group 2 element having an atomic number less than that of Zn selected from the group consisting of Mg and Ca.
12. The display device according to claim 6 , wherein the channel layer is formed of an amorphous oxide having a composition represented by the following formula:
[(Sn 1 - x M4 x )O 2 ]a .[(In 1 - y M3 y ) 2 O 3 ]b .[(Zn 1 - z M2 z O)] c
wherein 0≦x≦1, 0≦y≦1, 0≦z≦1, 0≦a≦1, 0≦b≦1, 0≦c≦1, and a+b+c=1;
M4 is a Group 4 element having an atomic number less than that of Sn selected from the group consisting of Si, Ge, and Zr;
M3 is Lu or a Group 3 element having an atomic number less than that of In selected from the group consisting of B, Al, Ga, and Y; and
M2 is a Group 2 element having an atomic number less than that of Zn selected from the group consisting of Mg and Ca.
13. The display device according to claim 12 , wherein M3 is Ga.