Image sensors including color adjustment path
An image sensor includes a transfer transistor including a vertical gate portion extending in a depth direction of a substrate in an active region of the substrate and photodiode regions located at positions of different depths with respect to a top surface of the substrate in the active region. At least one color adjustment path extends between at least two photodiode regions of the photodiode regions and provides a charge movement path between the at least two photodiode regions.
1. An image sensor comprising:
a device isolation region defining an active region in a unit pixel of a substrate;
a transfer transistor comprising a vertical gate portion extending from a top surface of the substrate in a depth direction of the substrate in the active region, and a channel region vertically extending along sidewalls of the vertical gate portion in the active region;
a plurality of photodiode regions located at positions of different depths with respect to the top surface of the substrate in the active region; and
at least one color adjustment path area located at a position spaced apart from the channel region, the at least one color adjustment path area extending between at least two photodiode regions of the plurality of photodiode regions, and providing a charge movement path between the at least two photodiode regions.
2. The image sensor of claim 1 , wherein the at least one color adjustment path area is located at a position spaced apart from the device isolation region.
3. The image sensor of claim 1 , wherein the at least one color adjustment path area comprises a color adjustment path area that penetrates through the plurality of photodiode regions so as to be surrounded by the plurality of photodiode regions.
4. The image sensor of claim 1 , wherein the at least one color adjustment path area comprises an inner color adjustment path area located at a position spaced apart from a horizontal-direction edge of at least one of the plurality of photodiode regions, and surrounded by the plurality of photodiode regions.
5. The image sensor of claim 1 , wherein the at least one color adjustment path area comprises at least one edge-side color adjustment path area located at a position contacting a horizontal-direction edge of at least one of the plurality of photodiode regions, and partially surrounded by the plurality of photodiode regions.
6. The image sensor of claim 5 , wherein the at least one edge-side color adjustment path area contacts a portion of the horizontal-direction edge of the at least one of the plurality of photodiode regions, wherein the portion is farthest from the vertical gate portion.
7. The image sensor of claim 5 , wherein the at least one edge-side color adjustment path area comprises a plurality of color adjustment path areas that contact a plurality of portions of the horizontal-direction edge of the at least one of the plurality of photodiode regions.
8. The image sensor of claim 1 , further comprising an impurity region located in the substrate so as to surround sidewalls and a bottom surface of the device isolation region, and being in contact with a portion of the at least one color adjustment path area.
9. The image sensor of claim 1 , further comprising an impurity region located in the substrate so as to surround sidewalls and a bottom surface of the device isolation region, and being spaced apart from the at least one color adjustment path area.
10. The image sensor of claim 1 , wherein the transfer transistor further comprises a horizontal gate portion extending from a top portion of the vertical gate portion along the top surface of the substrate, and
the at least one color adjustment path area is located at a position that does not vertically overlap with the horizontal gate portion in the substrate.
11. The image sensor of claim 1 , wherein the plurality of photodiode regions vertically overlap with each other.
12. The image sensor of claim 1 , wherein the plurality of photodiode regions comprise a first semiconductor region having a first conductivity type, and a plurality of second semiconductor regions having a second conductivity type different from the first conductivity type, the second semiconductor regions being spaced apart from each other with the first semiconductor region interposed therebetween, and
wherein the at least one color adjustment path area comprises a third semiconductor region having the second conductivity type.
13. The image sensor of claim 12 , wherein the at least one color adjustment path area has a shape of a straight pillar extending from a top second semiconductor region of the plurality of second semiconductor regions, through the first semiconductor region to a bottom second semiconductor region of the plurality of second semiconductor regions, the top second semiconductor region being closer to the top surface of the substrate, the bottom second semiconductor region being closer to a bottom surface of the substrate.
14. An image sensor comprising:
a substrate comprising a top surface, a bottom surface, and an active region;
a transfer transistor comprising a vertical gate portion extending from the top surface of the substrate in a depth direction of the substrate in the active region;
a plurality of photodiode regions located at positions of different depths with respect to the top surface of the substrate in the active region;
at least one color adjustment path area located at a position spaced apart from the vertical gate portion in the active region, the at least one color adjustment path area extending between at least two photodiode regions of the plurality of photodiode regions, and providing a charge movement path between the at least two photodiode regions;
a color filter on the substrate; and
a micro-lens on the color filter.
15. The image sensor of claim 14 , wherein the image sensor comprises a backside illumination type image sensor, and the color filter is on the bottom surface of the substrate.
16. An image sensor comprising:
a semiconductor substrate including a face;
a plurality of semiconductor photodiodes in the semiconductor substrate, at different depths from the face, and being configured to absorb light of different colors; and
a semiconductor color adjustment path in the semiconductor substrate that extends between at least two of the semiconductor photodiodes that are at different depths from the face.
17. The image sensor of claim 16 , wherein the semiconductor color adjustment path extends between the at least two of the semiconductor photodiodes at central portions thereof so as to be surrounded by the at least two of the semiconductor photodiodes.
18. The image sensor of claim 16 , wherein the semiconductor color adjustment path extends between the at least two of the semiconductor photodiodes at peripheral portions thereof so as to be only partially surrounded by the at least two of the semiconductor photodiodes.
19. The image sensor of claim 18 further comprising a transfer transistor that extends into the semiconductor substrate from the face, wherein the semiconductor color adjustment path extends between the at least two of the semiconductor photodiodes at peripheral portions thereof that are furthest away from the transfer transistor.
20. The image sensor of claim 16 wherein a respective semiconductor photodiode includes regions of first and second different conductivity types that define a semiconductor junction therebetween that extends generally parallel to the face, wherein the semiconductor color adjustment path comprises a pillar of the first conductivity type that extends into the regions of first conductivity type of the semiconductor photodiodes.