Semiconductor structure and method for manufacturing the same
Semiconductor structure and methods for manufacturing the same are disclosed. In one embodiment, the semiconductor device is formed on an SOI substrate comprising an SOI layer, a buried insulating layer, a buried semiconductor layer and a semiconductor substrate from top to bottom, and comprises: source/drain regions formed in the SOI layer; a gate formed on the SOI layer, wherein the source/drain regions are located at both sides of the gate; a back gate region formed by a portion of the buried semiconductor layer which is subjected to resistance reduction; and a first isolation structure and a second isolation structure which are located at both sides of the source/drain regions and extend into the SOI substrate; wherein the first isolation structure and the second isolation structure laterally adjoin the SOI layer at a first side surface and a second side surface respectively; the first isolation structure laterally adjoins the buried semiconductor layer at a third side surface; and the third side surface is located between the first side surface and the second side surface.
1. A semiconductor structure formed on an SOI substrate comprising
a semiconductor (SOI) layer,
a buried insulating layer,
a buried semiconductor layer and
a semiconductor substrate in a stack, said semiconductor structure comprising:
source/drain regions formed in the SOI layer;
a gate formed on the SOI layer, wherein the source/drain regions are located at both sides of the gate;
a back gate region formed by a portion of the buried semiconductor layer; and
a first isolation structure and a second isolation structure which are located at both sides of the source/drain regions and extend into the SOI substrate;
wherein:
the first isolation structure and the second isolation structure laterally adjoin the SOI layer at a first side surface and a second side surface, respectively;
the first isolation structure laterally adjoins the buried semiconductor layer at a third side surface; and
the third side surface is located between the first side surface and the second side surface.
2. The semiconductor structure according to claim 1 , wherein the first side surface, the second side surface and the third side surface are substantially perpendicular to the plane where the SOI layer is located.
3. The semiconductor structure according to claim 1 , wherein the second isolation structure laterally adjoins the buried semiconductor layer at a fourth side surface, the fourth side surface is located between the first side surface and the second side surface and is opposite to the third side surface, and the fourth side surface is substantially perpendicular to the plane where the SOI layer is located.
4. The semiconductor structure according to claim 1 , wherein the buried semiconductor layer is made of crystalline SiGe or crystalline Si.
5. The semiconductor structure according to claim 1 , wherein the back gate region is doped with B for a pMOSFET, and the back gate region is doped with P or As for an nMOSFET.
6. The semiconductor structure according to claim 1 , wherein the SOI layer has a thickness of about 5-20 nm, the buried insulating layer has a thickness of about 5-30 nm, and the buried semiconductor layer has a thickness of about 10-100 mm.
7. The semiconductor structure according to claim 1 , wherein a portion of each of the first isolation structure and the second isolation structure in the buried semiconductor layer has a width of about 80-200 nm, and a portion of each of the first isolation structure and the second isolation structure over the buried semiconductor layer has a width of about 20-100 nm.
8. The semiconductor structure according to claim 1 , wherein the buried insulating layer is a buried oxide layer.