Method for fabricating semiconductor device
A semiconductor device includes a dielectric layer in which zirconium, hafnium, and a IV group element are mixed. A method for fabricating a capacitor includes forming a bottom electrode, forming the dielectric layer and forming a top electrode over the dielectric layer.
1. A semiconductor device comprising:
a dielectric layer in which zirconium, hafnium, and a N group element are mixed,
wherein an equivalent oxide thickness of the dielectric layer is 5 ű0.5 Å.
2. The semiconductor device of claim 1 , wherein the dielectric layer includes a ZrHfSiO layer or a ZrHfCeO layer.
3. The semiconductor device of claim 1 , wherein the dielectric layer has a stack structure of a ZrHfMO layer and an M-rich ZrHfMO layer, wherein M is a IV group element.
4. The semiconductor device of claim 1 , wherein the dielectric layer has a triple stacked structure of a first M-rich ZrHfMO layer, a ZrHfMO layer, and a second M-rich ZrHfMO layer, wherein M is a IV group element.
5. The semiconductor device of claim 1 , wherein the dielectric layer includes a IV group element having a composition ratio of at least 15% or less.
6. The semiconductor device of claim 1 , wherein the dielectric layer has a dielectric constant of 50 to 60.
7. The semiconductor device of claim 3 , wherein a thickness of the stack structure is equal to or less than at least 100 Å.
8. The semiconductor device of claim 3 , wherein a thickness of the M-rich ZrHfMO layer is 5 Å to 20 Å.
9. The semiconductor device of claim 3 , wherein M-rich ZrHfMO layer is formed to contact with an electrode of the semiconductor device.
10. The semiconductor device of claim 4 , wherein a thickness of the stack structure is equal to or less than at least 100 Å.
11. The semiconductor device of claim 3 , wherein a thickness of the first M-rich ZrHfMO layer and a thickness of the second M-rich ZrHfMO layer are 5 Å to 20 Å.
12. The semiconductor device of claim 3 , wherein one of the first and second M-rich ZrHfMO layers is formed to contact with an electrode of the semiconductor device.
13. A semiconductor device comprising:
a dielectric layer in which zirconium, hafnium, and a IV group element are mixed,
wherein the dielectric layer includes a ZrHfCeO layer,
wherein the dielectric layer has a dielectric constant of 50 to 60.