Oxide sintered body, target, transparent conductive film obtained by using the same, and transparent conductive substrate

1. An oxide sintered body, characterized by comprising zinc oxide and magnesium, and wherein a content of magnesium is from 0.02 to 0.30 as an atom number ratio of Mg/(Zn+Mg);

wherein magnesium oxide phase is not present in the oxide sintered body.

2. The oxide sintered body according to claim 1 , characterized in that the content of magnesium is from 0.05 to 0.18 as the atom number ratio of Mg/(Zn+Mg).

3. The oxide sintered body according to claim 1 , characterized in that specific resistance thereof is equal to or lower than 50 kΩcm.

4. The oxide sintered body according to claim 1 , characterized in that the oxide sintered body is obtained by formation and sintering by using a hot press method.

5. The oxide sintered body according to claim 1 , wherein an average particle size of raw material powders comprised in the oxide sintered body is equal to or smaller than 3 μm.

6. The oxide sintered body according to claim 1 , wherein by phase identification of the oxide sintered body by X-ray diffraction measurement, a diffraction peak originating from a magnesium oxide phase is not present.

7. A target obtained by processing the oxide sintered body according to claim 1 .

8. The target according to claim 7 , characterized in that the density thereof is equal to or higher than 5.0 g/cm 3 , and it is used in a sputtering method.

9. The target according to claim 7 , characterized in that the density thereof is from 3.5 to 4.5 g/cm 3 , and it is used in an ion plating method.

10. A transparent conductive film formed on a substrate by a sputtering method or an ion plating method, by using the target according to claim 7 .

11. The transparent conductive film according to claim 10 , characterized in that comprises zinc oxide and magnesium, and content of magnesium is from 0.02 to 0.30 as the atom number ratio of Mg/(Zn+Mg).

12. The transparent conductive film according to claim 10 , characterized in that comprises mainly a zinc oxide phase having a wurtzite structure of hexagonal crystal, and peak intensity ratio by X-ray diffraction measurement represented by the following expression (B) is equal or more than 50%:

I[ZnO(002)]/(I[ZnO(002)]+I[ZnO(100)])×100(%)  (B)

(wherein I[ZnO(002)] represents (002) peak intensity of the zinc oxide phase having a wurtzite structure of hexagonal crystal, and I[ZnO(100)] represents (100) peak intensity of the zinc oxide phase having a wurtzite structure of hexagonal crystal).

13. The transparent conductive film according to claim 10 , characterized in that the zinc oxide phase having a rock salt structure of cubic crystal is not contained.

14. A transparent conductive substrate, characterized in that provides a transparent substrate and the transparent conductive film according to claim 10 formed on one surface or both surfaces of said transparent substrate, and said transparent substrate is any of a glass plate, a quartz plate, a resin plate or a resin film whose one surface or both surfaces is covered with a gas barrier film, or a resin plate or a resin film inserted with a gas barrier film inside thereof.

15. The transparent conductive substrate according to claim 14 , characterized in that said gas barrier film is at least one selected from a silicon oxide film, a silicon oxynitride film, a magnesium aluminate film, a tin oxide film and a diamond-like carbon film.

16. The transparent conductive substrate according to claim 14 , characterized in that said resin plate or resin film is made of polyethyleneterephtharate, polyethersulfone, polyarylate, polycarbonate, or a laminated structure body whose surface is covered with an acrylic organic substance.