Semiconductor device and method for manufacturing the same
Semiconductor devices and methods for manufacturing the semiconductor devices are disclosed. A semiconductor device includes a substrate, a fin formed above the substrate with a semiconductor layer formed between the substrate and the fin, and a gate stack crossing over the fin. The fin and the semiconductor layer may include different materials and have etching selectivity with respect to each other. A patterning of the fin can be stopped reliably on the semiconductor layer. Therefore, it is possible to better control the height of the fin and thus the channel width of the final device.
1. A method for manufacturing a semiconductor device, comprising:
sequentially forming a first semiconductor layer and a second semiconductor layer on a substrate, wherein the first semiconductor layer and the second semiconductor layer comprise different materials and have etching selectivity with respect to each other;
patterning the second semiconductor layer to form a fin;
forming a gate dielectric layer on side surfaces of the fin over a top surface of the first semiconductor layer;
patterning the first semiconductor layer to keep a portion thereof under the fin;
forming an isolation layer on opposite sides of the kept portion of the first semiconductor layer over the substrate;
forming a gate electrode layer crossing over the fin on the isolation layer; and
patterning the gate dielectric layer and the gate electrode layer to form a gate stack.
2. The method according to claim 1 , further comprising forming a work function adjustment layer on side surfaces of the gate dielectric layer as a spacer to the gate dielectric layer prior to the formation of the isolation layer.
3. The method according to claim 2 , wherein patterning the first semiconductor layer to keep a portion thereof under the fin comprises:
etching the first semiconductor layer with the fin and the work function adjustment layer as a mask; and
further laterally etching the first semiconductor layer so that the first semiconductor layer has a width substantially the same as that of the fin.
4. A method for manufacturing a semiconductor device, comprising:
sequentially forming a first semiconductor layer and a second semiconductor layer on a substrate, wherein the first semiconductor layer and the second semiconductor layer comprise different materials and have etching selectivity with respect to each other;
patterning the second semiconductor layer to form a fin;
forming a gate dielectric layer on side surfaces of the fin over a top surface of the first semiconductor layer;
processing the first semiconductor layer to convert portions of the first semiconductor layer exposed by the fin and the gate dielectric layer into an insulator so that an isolation layer is formed thereby;
forming a gate electrode layer crossing over the fin on the isolation layer; and
patterning the gate electrode layer and the gate dielectric layer to form a gate stack.
5. The method according to claim 4 , wherein processing the first semiconductor layer comprises processing the first semiconductor layer by oxidation.
6. The method according to claim 4 , further comprising forming a work function adjustment layer on side surfaces of the gate dielectric layer prior to the formation of the isolation layer.