MODFET active pixel X-ray detector
Detection of ionizing radiation with modulation doped field effect transistors (MODFETs) is provided. There are two effects which can occur, separately or together. The first effect is a direct effect of ionizing radiation on the mobility of electrons in the 2-D electron gas (2DEG) of the MODFET. An ionizing radiation absorption event in or near the MODFET channel can perturb the 2DEG mobility to cause a measurable effect on the device conductance. The second effect is accumulation of charge generated by ionizing radiation on a buried gate of a MODFET. The conductance of the MODFET can be made sensitive to this accumulated charge, thereby providing detection of ionizing radiation. 1-D or 2-D arrays of MODFET detectors can be employed to provide greater detection area and/or spatial resolution of absorption events. Such detectors or detector pixels can be integrated with electronics, such as front-end amplification circuitry.
1. Apparatus for high speed detection of ionizing radiation, the apparatus comprising:
a modulation doped field effect transistor (MODFET) having a channel for current flow between a source and a drain, wherein electrons in the channel form a two-dimensional electron gas (2DEG), and wherein the MODFET includes a first gate to set an operating point of the MODFET for radiation detection; and
an absorption region disposed at and/or in proximity to the channel and capable of absorbing ionizing radiation;
wherein the 2DEG provide a conductance that is modulated in response to absorption of ionizing radiation in the absorption region;
wherein the ionizing radiation has a photon or particle energy of about 20 keV or greater.
2. The apparatus of claim 1 , wherein the electrons in the 2DEG have a mobility that is modulated in response to absorption of ionizing radiation in the absorption region.
3. The apparatus of claim 1 , wherein the MODFET is a double-heterostructure MODFET, and further comprising a buried second gate disposed in proximity to the channel, wherein charges generated by absorption of ionizing radiation in the absorption region can accumulate on the buried second gate as accumulated charge, and wherein the conductance is modulated in response to the accumulated charge.
4. The apparatus of claim 1 , wherein conductance changes caused by incident ionizing radiation are measured via their effect on operation of the MODFET.
5. The apparatus of claim 1 , wherein the MODFET and absorption region are of different material systems.
6. A sensor array comprising two or more of the apparatus of claim 1 disposed in a 1-D or 2-D array of sensor pixels.
7. The apparatus of claim 6 , wherein the array of sensor pixels is read out in parallel or sequentially.
8. An integrated circuit comprising the apparatus of claim 1 .
9. The apparatus of claim 1 , wherein the MODFET is implemented in layers of Hg(1-x)Cd(x)Te that are grown lattice-matched to a layer of Cd(1-y)Zn(y)Te that serves as the absorption region.
10. The apparatus of claim 1 , wherein the conductance decreases in response to absorption of ionizing radiation in the absorption region.
11. A method for detection of ionizing radiation, the method comprising:
providing a modulation doped field effect transistor (MODFET) having a channel for current flow between a source and a drain, wherein electrons in the channel form a two-dimensional electron gas (2DEG), and wherein the MODFET includes a first gate to set an operating point of the MODFET for radiation detection; and
disposing an absorption region at and/or in proximity to the channel that is capable of absorbing ionizing radiation;
wherein the electrons in the 2DEG provide a conductance that is modulated in response to absorption of ionizing radiation in the absorption region;
wherein the ionizing radiation has a photon or particle energy of about 20 keV or greater.
12. The method of claim 11 , wherein the electrons in the 2DEG have a mobility that is modulated in response to absorption of ionizing radiation in the absorption region.
13. The method of claim 11 , wherein the MODFET is a double-heterostructure MODFET, wherein the MODFET further comprises a buried second gate disposed in proximity to the channel, wherein charges generated by absorption of ionizing radiation in the absorption region can accumulate on the buried second gate as accumulated charge, and wherein the conductance is modulated in response to the accumulated charge.
14. The method of claim 11 , further comprising measuring conductance changes caused by incident ionizing radiation via their effect on operation of the MODFET.
15. The method of claim 11 , further comprising pulse width modulation of detector signals to provide a modulated output signal, wherein pulse width in the output signal is related to one or more incident ionizing radiation parameters.
16. A method of single photon detection of ionizing radiation comprising performing the method of claim 11 for an incident photon.
17. The method of claim 16 , wherein variation of a drain-source current in the MODFET is indicative of absorption of the incident photon, and the extent of the variation is indicative of the energy of the incident photon.
18. The method of claim 17 , further comprising passing a digital data signal through the MODFET, wherein distortion of the digital data signal is indicative of absorption of the incident photon, and the extent of the distortion is indicative of the energy of the incident photon.
19. The method of claim 11 , wherein the conductance decreases in response to absorption of ionizing radiation in the absorption region.