Semiconductor device
The concentration of impurity elements included in an oxide semiconductor film in the vicinity of a gate insulating film is reduced. Further, crystallinity of the oxide semiconductor film in the vicinity of the gate insulating film is improved. A semiconductor device includes an oxide semiconductor film over a substrate, a source electrode and a drain electrode over the oxide semiconductor film, a gate insulating film which includes an oxide containing silicon and is formed over the oxide semiconductor film, and a gate electrode over the gate insulating film. The oxide semiconductor film includes a region in which the concentration of silicon is lower than or equal to 1.0 at. %, and at least the region includes a crystal portion.
1. A semiconductor device comprising:
an oxide semiconductor film over a substrate;
a source electrode and a drain electrode over the oxide semiconductor film;
a gate insulating film over the oxide semiconductor film, wherein the gate insulating film comprises an oxide containing silicon; and
a gate electrode over the gate insulating film,
wherein the oxide semiconductor film comprises a region in which a concentration of silicon is lower than or equal to 1.0 at. %,
wherein the region is located at an interface between the oxide semiconductor film and the gate insulating film and in contact with the gate insulating film, and
wherein the region comprises a crystal portion.
2. The semiconductor device according to claim 1 , wherein an end portion of the oxide semiconductor film is tapered at an angle of 20° to 50°.
3. The semiconductor device according to claim 1 , wherein the oxide semiconductor film except the region comprises a second crystal portion.
4. The semiconductor device according to claim 1 , further comprising a base insulating film between the substrate and the oxide semiconductor film,
wherein in the crystal portion, a c-axis is aligned in a direction perpendicular to an interface between the base insulating film and the oxide semiconductor film.
5. The semiconductor device according to claim 1 , wherein the concentration of silicon in the region is lower than or equal to 0.1 at. %.
6. The semiconductor device according to claim 1 , further comprising an interlayer insulating film over the gate insulating film and the gate electrode.
7. A semiconductor device comprising:
an oxide semiconductor film over a substrate;
a source electrode and a drain electrode over the oxide semiconductor film;
a gate insulating film over the oxide semiconductor film, wherein the gate insulating film comprises an oxide containing silicon; and
a gate electrode over the gate insulating film,
wherein the oxide semiconductor film comprises a region in which a concentration of silicon is lower than or equal to 1.0 at. % and a concentration of carbon is lower than or equal to 1.0×10 20 atoms/cm 3 ,
wherein the region is located at an interface between the oxide semiconductor film and the gate insulating film and in contact with the gate insulating film, and
wherein the region comprises a crystal portion.
8. The semiconductor device according to claim 7 , wherein an end portion of the oxide semiconductor film is tapered at an angle of 20° to 50°.
9. The semiconductor device according to claim 7 , wherein the oxide semiconductor film except the region comprises a second crystal portion.
10. The semiconductor device according to claim 7 , further comprising a base insulating film between the substrate and the oxide semiconductor film,
wherein in the crystal portion, a c-axis is aligned in a direction perpendicular to an interface between the base insulating film and the oxide semiconductor film.
11. The semiconductor device according to claim 7 , wherein the concentration of silicon in the region is lower than or equal to 0.1 at. %.
12. The semiconductor device according to claim 7 , further comprising an interlayer insulating film over the gate insulating film and the gate electrode.
13. A semiconductor device comprising:
an oxide semiconductor film over a substrate;
a source electrode and a drain electrode over the oxide semiconductor film;
a gate insulating film over the oxide semiconductor film, wherein the gate insulating film comprises an oxide containing silicon; and
a gate electrode over the gate insulating film,
wherein the oxide semiconductor film comprises a region in which a concentration of silicon is lower than or equal to 1.0 at. % and a concentration of carbon is lower than or equal to 1.0×10 20 atoms/cm 3 ,
wherein the region is located at an interface between the oxide semiconductor film and the gate insulating film and in contact with the gate insulating film,
wherein the region comprises a crystal portion, and
wherein the region has a thickness less than or equal to 5 nm.
14. The semiconductor device according to claim 13 , wherein an end portion of the oxide semiconductor film is tapered at an angle of 20° to 50°.
15. The semiconductor device according to claim 13 , wherein the oxide semiconductor film except the region comprises a second crystal portion.
16. The semiconductor device according to claim 13 , further comprising a base insulating film between the substrate and the oxide semiconductor film,
wherein in the crystal portion, a c-axis is aligned in a direction perpendicular to an interface between the base insulating film and the oxide semiconductor film.
17. The semiconductor device according to claim 13 , wherein the concentration of silicon in the region is lower than or equal to 0.1 at. %.
18. The semiconductor device according to claim 13 , further comprising an interlayer insulating film over the gate insulating film and the gate electrode.