Image sensor for stabilizing a black level
An image sensor includes first pixels, second pixels and a deep trench. The first pixels are formed in an active region of a semiconductor substrate, and configured to measure photo-charges corresponding to incident light. The second pixels are formed in an optical-black region of the semiconductor substrate, and are configured to measure black levels. The deep trench is formed vertically in a boundary region of the optical-black region, where the boundary region is adjacent to the active region, and configured to block leakage light and diffusion carriers from the active region.
1. An image sensor comprising:
first pixels which are formed in an active region of a semiconductor substrate and configured to measure photo-charges corresponding to incident light;
second pixels which are formed in an optical-black region of the semiconductor substrate and configured to measure black levels;
a deep trench which is formed substantially vertically, with respect to an upper surface of the semiconductor substrate, in a boundary region of the optical-black region;
an n-type buried well which is formed substantially horizontally, with respect to the upper surface of the semiconductor substrate, in a bottom portion of the optical-black region, and is doped with n-type impurities to capture photoelectrons diffused from the active region; and
a vertical contact which is formed substantially vertically from the upper surface of the semiconductor substrate to the n-type buried well, and is configured to apply a positive drain voltage to the n-type buried well,
wherein the vertical contact is disposed at an end portion of the optical-black region, the end portion being disposed opposite to the boundary region,
the boundary region is adjacent to the active region, and
the deep trench is configured to block leakage light and diffusion carriers from the active region.
2. The image sensor of claim 1 , further comprising:
photoelectric conversion units of the first and second pixels which are formed vertically, with respect to the upper surface of the semiconductor substrate,
wherein a depth of the deep trench is greater than depths of the photoelectric conversion units of the first and second pixels.
3. The image sensor of claim 2 , wherein the deep trench is filled with dielectric material having a refractive index higher than a refractive index of the semiconductor substrate.
4. The image sensor of claim of claim 2 , wherein a metal coating layer is formed on an inner surface of the deep trench.
5. The image sensor of claim 2 , wherein the optical-black region includes a first optical-black region and a second optical-black region disposed at a first side and a second side of the active region, respectively, and each comprising a boundary region adjacent the respective sides of the active region,
the deep trench includes a first deep trench and a second deep trench,
the first deep trench is formed substantially vertically in the boundary region of
the first optical-black region, with respect to the upper surface of the semiconductor substrate, and
the second deep trench is formed substantially vertically in the boundary region of the second optical-black region, with respect to the upper surface of the semiconductor substrate.
6. The image sensor of claim 2 , wherein the optical-black region surrounds the active region, and
the deep trench has a ring-shape to surround the active region.
7. The image sensor of claim 1 , further comprising:
a p-type buried well which is formed substantially horizontally, with respect to the upper surface of the semiconductor substrate, in another bottom portion of the optical-black region, and is doped with p-type impurities to repel the photoelectrons diffused from the active region.
8. The image sensor of claim 7 , wherein the p-type buried well is disposed on the n-type buried well, as seen in a direction from the bottom portion to the upper surface of the semiconductor substrate.
9. The image sensor of claim 7 , wherein the n-type buried well is disposed on the p-type buried well, as seen in a direction from the bottom portion to the upper surface of the semiconductor substrate.
10. The image sensor of claim 1 , wherein the boundary region is disposed in a region of the optical-black region which is free of the second pixels.
11. An image sensor comprising:
first pixels which are formed in an active region of a semiconductor substrate, and are configured to measure photo-charges corresponding to incident light;
second pixels which are formed in an optical-black region of the semiconductor substrate, and are configured to measure black levels;
an n-type buried well which is formed substantially horizontally, with respect to an upper surface of the semiconductor substrate, in a bottom portion of the optical-black region, and is doped with n-type impurities to capture photoelectrons diffused from the active region; and
a vertical contact which is formed substantially vertically from an upper surface of the semiconductor substrate to the n-type buried well, and is configured to apply a positive drain voltage to the n-type buried well,
wherein the vertical contact is disposed at an end portion of the optical-black region, the end portion being disposed at a side of the optical-black region which is opposite to a boundary region adjacent to the active region.
12. The image sensor of claim 11 , wherein the optical-black region surrounds the active region, and
the vertical contact has a ring-shape to surround the optical-black region.
13. The image sensor of claim 11 , further comprising:
a p-type buried well which is formed substantially horizontally, with respect to the upper surface of the semiconductor substrate, in another bottom portion of the optical-black region, and is doped with p-type impurities to repel the photoelectrons diffused from the active region.