Semiconductor device
A semiconductor device includes a structure in which a semiconductor element (chip) is mounted in a cavity formed in a wiring board with an adhesive interposed between the chip and a bottom surface of the cavity, and electrode terminals of the chip are connected via wires to wiring portions formed on the board around the cavity. The chip is mounted in close contact with a side wall of the cavity, the side wall being near a region where a wiring for higher frequency compared with other wirings within the wiring portion is formed. A recessed portion is provided in a region of the bottom surface of the cavity, and a thermal via extending from the bottom surface of the recessed to the outside of the board is provided, the region being near a portion where the chip is in close contact.
1. A semiconductor device, comprising:
a wiring board including a first surface and a second surface opposite to the first surface;
a cavity formed in the first surface;
a semiconductor element mounted on a bottom surface of the cavity via an adhesive and being in close contact with a side wall of the cavity, which is near the wiring for higher frequency; and
a wiring layer for a high frequency wave and another wiring layer in each of which first and second pads are defined at both ends and which are formed on the first surface around the cavity, each of the wiring layer and the another wiring layer being electrically connected to the semiconductor element through the first pad;
a first protection film and a second protection film formed on the first and second surfaces of the wiring board, respectively;
a heat-radiating structure which is provided in the bottom surface of the cavity, and which includes a plurality of thermal vias formed through the wiring board in a direction from the bottom surface of the cavity toward the second surface,
wherein in a part of the heat-radiating structure, which is near the portion where the semiconductor element is in close contact with the side wall of the cavity, the number of the thermal vias formed per unit area is larger than in the other part of the heat-radiating structure, and
the first protection film from which the wiring layer for the higher frequency wave, the first and second pads of the wiring layer for the higher frequency wave are exposed and with which the another wiring layer and the second pad of the another wiring layer are covered other than the first pad of the another wiring layer.
2. The semiconductor device according to claim 1 , wherein the part of the heat-radiating structure constitutes a first heat-radiating structure being a path through which the heat is transmitted to at least one of the thermal vias through the adhesive, and
the other part of the heat-radiating structure constitutes a second heat-radiating structure being a path through which the heat is transmitted to at least the other one of the thermal vias through the adhesive on the bottom surface of the cavity.
3. The semiconductor device according to claim 1 , wherein the wiring board includes an antenna electrically connected to the wiring for higher frequency.
4. The semiconductor device according to claim 1 , wherein a length of the wiring for higher frequency compared with the other wirings within the wiring portion is shorter than that of the other wirings.