Memory circuit properly workable under low working voltage
A memory circuit properly workable under low working voltage includes a plurality of write word lines, a plurality of write bit lines, a plurality of read/write word lines, a plurality of read/write bit lines, a plurality of read/write inverted word lines, a plurality of virtual voltage source circuits, a plurality of virtual ground circuits, and a plurality of asymmetrical RAM cells constituting a cell array. The asymmetrical RAM cells are formed of seven transistors, five of which are NMOS transistors and two of which are PMOS transistors. The virtual voltage power source circuit and the virtual ground circuit can reinforce the write-in and read abilities under low working voltage to make the write-in and read actions more stable, decrease leakage current, and lower power consumption.
1. A memory circuit properly workable under low working voltage, comprising:
a plurality of write word lines;
a plurality of write bit lines;
a plurality of read/write word lines;
a plurality of read/write bit lines;
a plurality of read/write inverted word lines;
a plurality of virtual voltage source circuits;
a plurality of virtual ground circuits; and
a plurality of asymmetrical RAM cells constituting a cell array electrically connected with the write word lines, the write bit lines, the read/write word lines, the read/write bit lines, the read/write inverted word lines, the virtual voltage source circuits, and the virtual ground circuits, each of the asymmetrical RAM cells is formed of seven transistors, five of which are NMOS transistors and two of which are PMOS transistors;
wherein the gate of the first PMOS transistor is electrically connected with the drain of the second PMOS transistor, the drain of the second NMOS transistor, the gate of the third NMOS transistor, and the drain of the fourth NMOS transistor, the source of the first PMOS transistor being electrically connected with the virtual voltage source circuit, the drain of the first PMOS transistor being electrically connected with the gate of the second PMOS transistor, the gate of the fourth NMOS transistor, the drain of the first NMOS transistor, and the drain of the fifth NMOS transistor;
wherein the source of the second PMOS transistor is electrically connected with an external voltage source;
wherein the gate of the first NMOS transistor is electrically connected with the write word line and the source of the first NMOS transistor is electrically connected with the write bit line;
wherein the gate of the second NMOS transistor is electrically connected with the read/write word line and the source of the second NMOS transistor is electrically connected with the read/write bit line;
wherein the source of the third NMOS transistor is electrically connected with the virtual ground circuit and the drain of the third NMOS transistor is electrically connected with the source of the fifth NMOS transistor;
wherein the source of the fourth NMOS transistor is electrically connected with the virtual ground circuit;
wherein the gate of the fifth NMOS transistor is electrically connected with the read/write inverted word line.
2. The memory circuit as defined in claim 1 , wherein the virtual ground circuit comprises an NMOS, a diode formed of an NMOS, a diode formed of a PMOS, and a virtual ground wire, the NMOS and the diodes of the NMOS and PMOS being electrically connected with the virtual ground wire; the virtual ground circuit is electrically connected with the source of the fourth NMOS transistor and the source of the third NMOS transistor via the virtual ground wire.
3. The memory circuit as defined in claim 1 , wherein the virtual voltage source circuit comprises a PMOS, a diode formed of an NMOS, a diode formed of a PMOS, and a virtual power cord, the PMOS and the diodes of the NMOS and PMOS being electrically connected with the virtual power cord; the virtual voltage source circuit is electrically connected with the gate of the first PMOS transistor via the virtual power cord.