IP Library › Granted Patent US 8,755,107
Granted Patent B2
US 8,755,107 · App. 13/575,376 · Granted Jun 17, 2014

Laser processing system

Inventors: Takeshi Sakamoto (Hamamatsu, JP); Takafumi Ogiwara (Hamamatsu, JP)
Assignee: Hamamatsu Photonics K.K.
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Quick Facts
Patent No.
US 8,755,107
App. No.
13/575,376
Granted
Jun 17, 2014
Kind
B2
Abstract

In a laser processing system 400 , a plurality of element patterns for creating a modulation pattern are prepared, and the modulation pattern is created from the element patterns according to a condition for forming the modified region for an object to be processed in order to form the modified region corresponding thereto. Laser light is modulated according to thus created modulation pattern, and the modified region is formed in the object by irradiation with the modulated laser light. Thus, according to the condition for forming the modified region corresponding to the object, the modulation pattern is created from the element patterns prepared beforehand.

Claims (10)

1. A laser processing system comprising:

a laser processing device for irradiating an object to be processed with laser light modulated by a spatial light modulator so as to form a modified region in the object;

pattern storage means for storing a plurality of kinds of element patterns to become elements for a modulation pattern for subjecting the laser light to a predetermined modulation in the spatial light modulator; and

pattern creation means for acquiring one or a plurality of kinds of element patterns for the modified region from the pattern storage means according to a condition for forming the modified region for the object, providing, when one kind of element pattern is acquired, the laser processing device with the one kind of element pattern as the modulation pattern for forming the modified region corresponding thereto, and providing, when the plurality of kinds of element patterns are acquired, the laser processing device with a composite pattern combining the plurality of element patterns as the modulation pattern for forming the modified region corresponding thereto.

2. A laser processing system according to claim 1 , wherein, when forming a plurality of kinds of modified regions in the object, the pattern creation means creates a modulation pattern for each of all the kinds of modified regions and then provides the laser processing device with the modulation pattern.

3. A laser processing system according to claim 1 , further comprising pattern assignment means for choosing, when the condition for forming the modified region for the object is provided, one or a plurality of kinds of element patterns according to the condition and assigning the element pattern to the pattern creation means.

4. A laser processing system according to claim 1 , wherein the pattern storage means stores an individual difference correction pattern as the element pattern, the individual difference correction pattern for correcting an individual difference occurring in the laser processing device.

5. A laser processing system according to claim 1 , wherein the pattern storage means stores a spherical aberration correction pattern as the element pattern, the spherical aberration correction pattern for correcting a spherical aberration occurring according to a material of the object and a distance from a laser light entrance surface of the object to a converging point of the laser light.

6. A laser processing system according to claim 1 , wherein, when relatively moving a converging point of the laser light along a line to cut the object having a planar form while using one main face of the object as a laser light entrance surface, so as to form modified regions to become a starting point region for cutting at a position closer to the other main face of the object, a position closer to the one main face, and an intermediate position between the position closer to the other main face and the position closer to the one main face,

for forming the modified region at the intermediate position after forming the modified region at the position closer to the other main face but before forming the modified region at the position closer to the one main face, the pattern storage means stores a quality pattern as the element pattern, the quality pattern having a first brightness region extending in a direction intersecting the line and second brightness regions located on both sides of the first brightness region in an extending direction of the line.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 22, 2012
From: SAKAMOTO, TAKESHI; OGIWARA, TAKAFUMI
To: HAMAMATSU PHOTONICS K.K.
Reel/Frame 028825/0421 →
Priority Claims (1)
JP P2010-015539 · Jan 27, 2010 · national
Continuity (1)
Related Publication 20120327501A1 · Dec 27, 2012