Method of grooving a chemical-mechanical planarization pad
A method of forming a chemical mechanical polishing pad. The method includes polymerizing one or more polymer precursors and forming a chemical-mechanical planarization pad including a surface, forming grooves in the surface defining lands between the grooves, wherein the grooves have a first width, and shrinking the lands from a first land length (L 1 ) at the surface to a second land length (L 2 ) at the surface, wherein the second land length (L 2 ) is less than the first land length (L 1 ) and the grooves have a second width (W 2 ) wherein (W 1 )≦(X)(W 2 ), wherein (X) has a value in the range of 0.01 to 0.75.
1. A method of forming a chemical-mechanical planarization pad, comprising:
polymerizing one or more polymer precursors and forming a chemical-mechanical planarization pad including a surface;
removing material from the surface of said pad to form grooves in said surface and lands between said grooves, wherein said grooves have a first width (W 1 ); and
shrinking said lands from a first land length (L 1 ) at said surface to a second land length (L 2 ) at said surface, wherein said second land length (L 2 ) is less than said first land length (L 1 ) and said grooves have a second width (W 2 ) wherein (W 1 )≦(X) (W 2 ), wherein (X) has a value in the range of 0.01 to 0.75;
wherein shrinking said lands comprises further polymerizing said polymer precursors after forming grooves in said surface.
2. The method of claim 1 , wherein said grooves have a first depth (D 1 ) and after shrinking have a second depth (D 2 ) wherein (D 1 )≦(Y)(D 2 ) and (Y) has a value in the range of 0.80 to 0.95.
3. The method of claim 1 , wherein said (L 1 )≧(Z)(L 2 ) and (Z) has a value in the range of 1.1 to 1.4.
4. The method of claim 1 , wherein shrinking said lands comprises heating said chemical-mechanical planarization pad at a temperature in the range of 110° F. to 400° F. for a period of time.
5. The method of claim 4 , wherein shrinking said lands further comprises cooling said chemical-mechanical planarization pad at a temperature of 80° F. to 150° F. for a period of time.
6. The method of claim 1 , wherein said chemical-mechanical planarization pad includes at least one embedded structure in a polymer matrix.
7. The method of claim 6 , wherein said embedded structure is not present in at least a portion of said polymer matrix and said chemical-mechanical planarization pad includes a window integral to said pad defined by said portion of said pad where said embedded structure is not present.
8. The method of claim 6 , wherein said at least one embedded structure includes soluble material.
9. A method of forming chemical-mechanical planarization pad, comprising:
forming a chemical-mechanical planarization pad including a surface, wherein said chemical-mechanical planarization pad is formed by polymerizing polymer precursors to a selected degree of conversion;
removing material from the surface of said pad to form one or more grooves in said surface and lands between said grooves, wherein said grooves have a first width (W 1 ) and a first depth (D 1 ); and
thermally treating said chemical-mechanical planarization pad with said grooves formed in said surface, increasing said degree of conversion, and shrinking said lands wherein said grooves exhibit a second width (W 2 ) and a second depth (D 2 ), wherein said second width (W 2 ) is greater than said first width (W 1 ) and said second depth (D 2 ) is greater than said first depth (D 1 ).
10. The method of claim 9 , wherein said lands have a first length (L 1 ) at said surface and after shrinking have a second length (L 2 ) at said surface, wherein said second land length (L 2 ) is less than said first land length (L 1 ) wherein (L 1 )≧(Z)(L 2 ) and (Z) has a value in the range of 1.1 to 1.4.
11. The method of claim 9 , wherein thermally treating said chemical-mechanical planarization pad includes at least partially immersing said chemical-mechanical planarization pad in a liquid bath or an oven.
12. The method of claim 9 , wherein thermally treating said chemical mechanical planarization pad includes heating said pad at a temperature in the range of 110° F. to 400° F. for a period of 10 hours or greater.
13. The method of claim 9 , wherein thermally treating said chemical mechanical planarization pad includes heating said pad at a temperature in the range of 160° F. to 190° F. for a period of 16 hours to 90 hours.
14. The method of claim 9 , wherein thermally treating said chemical-mechanical planarization pad includes cooling said chemical-mechanical planarization pad at an intermediate temperature in the range of 80° C. to 150° C. for a period of 10 minutes or greater.
15. The method of claim 9 , wherein thermally treating said chemical-mechanical planarization pad includes cooling said chemical-mechanical planarization pad at an intermediate temperature in the range of 100° F. to 130° F. for a period of 10 minutes to 120 minutes.
16. The method of claim 9 , wherein said chemical-mechanical planarization pad includes at least one embedded structure in a polymer matrix.
17. The method of claim 16 , wherein said embedded structure is not present in at least a portion of said polymer matrix and said chemical-mechanical planarization pad includes a window integral to said pad defined by said portion of said pad where said embedded structure is not present.
18. The method of claim 16 , wherein said embedded structure comprises one or a plurality of fibers.
19. The method of claim 16 , wherein said at least one embedded structure includes soluble material.