Capacitor arrays for minimizing gradient effects and methods of forming the same
View Patent ↗Semiconductor devices having capacitor arrays and methods of forming the same. A semiconductor device is formed including a capacitor array. The capacitor array includes a plurality of operational capacitors formed along a diagonal of the capacitor array. The capacitor array also includes a plurality of dummy capacitors formed substantially symmetrically about the plurality of operational capacitors in the capacitor array. A first operational capacitor is formed at a first edge of the capacitor array. Each one of the plurality of operational capacitors is electrically coupled to a non-adjacent other one of the plurality of operational capacitors.
1. A semiconductor device, comprising:
a capacitor array formed in a plurality of cells of a two-dimensional grid, comprising:
a plurality of operational capacitors formed in a first subset of the plurality of cells along a diagonal of the array wherein a first operational capacitor is formed in a cell at a first edge of the capacitor array and at a first edge of the diagonal of the capacitor array; and
a plurality of dummy capacitors formed about the plurality of operational capacitors in the capacitor array in a second subset of the plurality of cells to achieve symmetry in the grid about the diagonal, wherein the plurality of dummy capacitors comprise a dummy capacitor formed in a cell at a second edge of the capacitor array and at a second edge of the diagonal of the capacitor array; and
wherein each one of the plurality of operational capacitors is electrically coupled to a non-adjacent other one of the plurality of operational capacitors.
2. The semiconductor device of claim 1 , wherein each one of the plurality of operational capacitors is a metal-oxide-metal (MOM) capacitor.
3. The semiconductor device of claim 2 , wherein one or more of the plurality of operational capacitors is a finger MOM capacitor.
4. The semiconductor device of claim 1 , wherein the sides of the two dimensional grid are substantially equilateral.
5. The semiconductor device of claim 1 , wherein at least two of the plurality of dummy capacitors are formed adjacent to each one of the plurality of operational capacitors.
6. A semiconductor device, comprising:
a capacitor array formed in a plurality of cells of a two-dimensional grid, comprising:
a plurality of operational capacitors formed in diagonally adjacent cells of the plurality of cells along a diagonal of the array wherein an operational capacitor is formed in a cell at a first edge of the capacitor array and at a first edge of the diagonal of the capacitor array; and
a plurality of dummy patterns formed symmetrically about the plurality of operational capacitors in the capacitor array in a subset of the plurality of cells wherein the plurality of dummy patterns comprise a dummy capacitor formed in a cell at a second edge of the capacitor array and at a second edge of the diagonal of the capacitor array;
wherein each one of the plurality of operational capacitors is electrically coupled to another one of the plurality of operational capacitors.
7. The semiconductor device of claim 6 , wherein each one of the plurality of operational capacitors is a metal-oxide-metal (MOM) capacitor.
8. The semiconductor device of claim 6 , wherein one or more of the plurality of operational capacitors is a finger MOM capacitor.
9. The semiconductor device of claim 6 , wherein the plurality of dummy patterns comprise a second dummy capacitor formed in a respective cell at a third edge of the capacitor array.
10. The semiconductor device of claim 9 , wherein the plurality of dummy patterns further comprise a third dummy capacitor formed in a respective cell at a fourth edge of the capacitor array.
11. The semiconductor device of claim 3 , wherein the one or more of the plurality of operational capacitors further comprises a plurality of layers interconnected in parallel with a plurality of vias formed in a third dimension between electrode layers and finger layers of the one or more of the plurality of operational capacitors.
12. The semiconductor device of claim 1 , wherein the capacitance measured between the operational capacitors of the capacitor array is between 0 and 1% of a median capacitance of the operational capacitors of the capacitor array.
13. The semiconductor device of claim 12 , wherein the median capacitance of the operational capacitors of the capacitor array is between approximately ten and forty femtofarads.
14. The semiconductor device of claim 6 , wherein the capacitance measured between the operational capacitors of the capacitor array is between 0 and 1% of a median capacitance of the operational capacitors of the capacitor array.
15. The semiconductor device of claim 8 , wherein the one or more of the plurality of operational capacitors further comprises a plurality of layers interconnected in parallel with a plurality of vias formed in a third dimension between electrode layers and finger layers of the one or more of the plurality of operational capacitors.
16. The semiconductor device of claim 6 , wherein each one of the plurality of operational capacitors is electrically coupled to a non-adjacent other one of the plurality of operational capacitors.
17. A semiconductor device, comprising:
a capacitor array formed in a plurality of cells of a two-dimensional grid, comprising:
a plurality of operational capacitors formed in a first subset of the plurality of cells along a diagonal of the array; and
a plurality of dummy patterns formed symmetrically about the plurality of operational capacitors in the capacitor array in a second subset of the plurality of cells wherein the plurality of dummy patterns comprise a dummy capacitor formed in a cell at a second edge of the capacitor array and at a second edge of the diagonal of the capacitor array;
wherein each one of the plurality of operational capacitors is electrically coupled to another one of the plurality of operational capacitors;
and wherein a first operational capacitor is formed in a cell at a first edge of the capacitor array and at a first edge of the diagonal of the capacitor array.
18. The semiconductor device of claim 17 , wherein each one of the plurality of operational capacitors is electrically coupled to a non-adjacent other one of the plurality of operational capacitors.
19. The semiconductor device of claim 17 , wherein the plurality of dummy patterns further comprise at least two dummy capacitors formed adjacent to each one of the plurality of operational capacitors.
20. The semiconductor device of claim 17 , wherein the dummy capacitor formed in the cell at the second edge of the capacitor array is the only dummy capacitor formed adjacent to any one of the plurality of operational capacitors.