Integrated circuit chip with reduced IR drop
An integrated circuit chip includes a semiconductor substrate; a first interconnection wire having a first portion and a second portion on the semiconductor substrate, wherein the second portion is separated from the first portion; a second interconnection wire situated under the first interconnection wire; a first conductive via electrically coupling the first portion with the second interconnection wire; a conductive layer situated between the first interconnection wire and the second interconnection wire; and a second conductive via electrically coupling the conductive layer with the second portion.
1. An integrated circuit chip comprising:
a semiconductor substrate;
a first interconnection wire having a first portion and a second portion on said semiconductor substrate, wherein said second portion is separated from said first portion;
a second interconnection wire situated under said first interconnection wire;
a first conductive via electrically coupling said first portion with said second interconnection wire;
a conductive layer situated between said first interconnection wire and said second interconnection wire, wherein said conductive layer is separated from said second interconnection wire; and
a second conductive via electrically coupling said conductive layer with said second portion.
2. The integrated circuit chip according to claim 1 wherein said first conductive via and said second conductive via are formed in the same one inter-metal dielectric (IMD) layer.
3. The integrated circuit chip according to claim 2 wherein said first conductive via is thicker than said second conductive via.
4. The integrated circuit chip according to claim 1 wherein said first interconnection wire and said second interconnection wire are copper wires.
5. The integrated circuit chip according to claim 1 wherein said conductive layer is made of non-copper material.
6. The integrated circuit chip according to claim 5 wherein material of said conductive layer comprises aluminum, titanium, titanium nitride, tantalum, tantalum nitride or any combinations thereof.
7. The integrated circuit chip according to claim 1 wherein said conductive layer has a thickness ranging between 750 angstroms and 6000 angstroms.
8. The integrated circuit chip according to claim 1 wherein said first conductive via and said second conductive via are both damascened copper via formed with said first interconnection wire.
9. The integrated circuit chip according to claim 1 wherein said conductive layer is formed simultaneously with a top plate or a bottom plate of a metal-insulator-metal (MIM) capacitor structure.
10. The integrated circuit chip according to claim 1 wherein said conductive layer further electrically interconnects with a third interconnection wire that is coplanar with said first interconnection wire through a third conductive via.
11. An integrated circuit chip comprising:
a semiconductor substrate having thereon a plurality of metal layers;
a power or ground wire having a first portion and a second portion formed in a topmost layer of said plurality of metal layers, wherein said second portion is separated from said first portion;
a lower interconnection wire situated under said power or ground wire;
a first conductive via formed in an inter-metal dielectric (IMD) layer between said power or ground wire and said lower interconnection wire for electrically coupling said first portion with said lower interconnection wire; and
a metal-insulator-metal (MIM) structure formed in said IMD layer being electrically coupling to said second portion through a second conductive via, wherein said MIM structure comprises an upper metal plate, a lower metal plate, and a capacitor dielectric layer interposed between said upper metal plate and said lower metal plate, wherein said lower metal plate has a bottom surface exposed in said IMD layer.
12. The integrated circuit chip according to claim 11 wherein said upper metal plate is electrically coupled to said power or ground wire.
13. The integrated circuit chip according to claim 11 wherein material of said upper metal plate comprises aluminum, titanium, titanium nitride, tantalum, tantalum nitride or any combinations thereof.
14. The integrated circuit chip according to claim 11 wherein said lower metal plate is electrically coupled to a ground or power voltage.
15. The integrated circuit chip according to claim 11 wherein said lower metal plate comprises aluminum.
16. The integrated circuit chip according to claim 11 wherein said capacitor dielectric layer comprises oxide or oxide-nitride-oxide (ONO) dielectric.
17. The integrated circuit chip according to claim 11 wherein said first conductive via is thicker than said second conductive via.
18. The integrated circuit chip according to claim 11 wherein said plurality of metal layers are copper layers.