IP Library Granted Patent US 8,769,965
Granted Patent B2
US 8,769,965 · App. 12/015,812 · Granted Jul 8, 2014

Magnetic refrigerating material and magnetic refrigerating device

Inventors: Hideyuki Tsuji (Yokohama, JP); Akiko Saito (Kawasaki, JP); Tadahiko Kobayashi (Yokohama, JP)
Assignee: Kabushiki Kaisha Toshiba
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Quick Facts
Patent No.
US 8,769,965
App. No.
12/015,812
Granted
Jul 8, 2014
Kind
B2
Abstract

A magnetic refrigeration material includes: at least one selected from the group consisting of Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm and Tb by a range of 4 to 15 atomic percentages; at least one selected from the group consisting of Fe, Co, Ni, Mn and Cr by a range of 60 to 93 atomic percentages; at least one selected from the group consisting of Si, C, Ge, Al, Ga and In by a range of 2.9 to 23.5 atomic percentages; and at least one selected from the group consisting of Ta, Nb and W by a range of 1.5 atomic percentages or less, wherein the magnetic refrigeration material includes a NaZn 13 type crystal structure as a main phase.

Claims (40)

1. A magnetic refrigeration material, comprising:

at least one selected from the group consisting of Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, and Yb by a range of 4 to 15 atomic percentages, wherein La is present;

at least one selected from the group consisting of Fe, Co, Ni, Mn, and Cr by a range of 60 to 93 atomic percentages, wherein Fe is present;

at least one selected from the group consisting of Si, C, Ge, Al, Ga, and In by a range of 2.9 to 23.5 atomic percentages, wherein Si is present; and

at least one selected from the group consisting of Ta, Nb, and W by a range of 0.1 to 1.5 atomic percentages,

wherein said magnetic refrigeration material includes a NaZn 13 type crystal structure as a main phase and a generation ratio of the NaZn 13 type crystal structure is equal to or more than 70%.

2. The material of claim 1 , wherein the content of said at least one selected from the group consisting of Ta, Nb, and W is set within a range of 0.1 to 1.0 atomic percentage and the generation ratio of the NaZn 13 type crystal structure is equal to or more than 80%.

3. The material of claim 1 , wherein the content of said at least one selected from the group consisting of Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, and Yb except elemental La is set within a range of one atomic percentage or less.

4. The material of claim 1 , comprising elemental Fe by a range of 80 to 90 atomic percentages from among said at least one selected from the group consisting of Fe, Co, Ni, Mn, and Cr.

5. The material of claim 1 , comprising elemental Co by a range of 0.5 to 15 atomic percentages from among said at least one selected from the group consisting of Fe, Co, Ni, Mn, and Cr.

6. The material of claim 5 , wherein the content of said at least one selected from the group consisting of Fe, Co, Ni, Mn, and Cr is set within a range of 10 atomic percentages or less except elemental Fe.

7. The material of claim 1 , wherein the content of said at least one selected from the group consisting of Si, C, Ge, Al, Ga, and In except elemental Si is set within a range of two atomic percentages or less.

8. The material of claim 1 , comprising:

elemental La within a range of 5 to 10 atomic percentages;

elemental Fe within a range of 70 to 91 atomic percentages; and

elemental Si within a range of 4 to 20 atomic percentages.

9. The material of claim 1 , wherein said material is granulated in spherical shape or oval shape so that an aspect ratio of said material is set within a range of two or less.

10. The material of claim 9 , wherein a size of the thus granulated material is set within a range of 0.1 to 2 mm.

11. The material of claim 9 , comprising:

a coating layer having a thickness of 10 μm or less on the thus obtained granulated material.

12. A magnetic refrigeration device, comprising:

a heat exchanger filled with a magnetic refrigeration material of claim 1 ; and

a magnetic generator configured to apply a magnetic field to said magnetic refrigeration material filled in said heat exchanger and remove said magnetic field from said magnetic refrigeration material.

13. The device of claim 12 , wherein a volume charging ratio of said magnetic refrigeration material is set within a range of 40 to 80% for a volume of said heat exchanger.

14. A magnetic refrigeration material, comprising:

at least one selected from the group consisting of Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, and Yb by a range of 4 to 15 atomic percentages, wherein La is present;

at least one selected from the group consisting of Fe, Co, Ni, Mn and Cr by a range of 60 to 93 atomic percentages, wherein Fe is present;

at least one selected from the group consisting of Si, C, Ge, Al, Ga, and In by a range of 2.9 to 23.5 atomic percentages, wherein Si is present; and

at least one selected from the group consisting of Ta, Nb, and W by a range of 0.1 to 1.0 atomic percentage,

wherein said magnetic refrigeration material includes a NaZn 13 type crystal structure as a main phase and a generation ratio of the NaZn 13 type crystal structure is equal to or more than 80%.

15. The material of claim 14 , wherein the content of said at least one selected from the group consisting of Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, and Yb except elemental La is set within a range of one atomic percentage or less.

16. The material of claim 14 , comprising elemental Fe by a range of 80 to 90 atomic percentages from among said at least one selected from the group consisting of Fe, Co, Ni, Mn, and Cr.

17. The material of claim 14 , comprising elemental Co by a range of 0.5 to 15 atomic percentages from among said at least one selected from the group consisting of Fe, Co, Ni, Mn, and Cr.

18. The material of claim 14 , comprising:

elemental La within a range of 5 to 10 atomic percentages;

elemental Fe within a range of 70 to 91 atomic percentages; and

elemental Si within a range of 4 to 20 atomic percentages.

19. The material of claim 14 , wherein said material is granulated in spherical shape or oval shape so that an aspect ratio of said material is set within a range of two or less.

20. The material of claim 19 , comprising:

a coating layer having a thickness of 10 μm or less on the thus obtained granulated material.

Assignments (2)
NUNC PRO TUNC ASSIGNMENT Recorded Feb 19, 2026
From: KABUSHIKI KAISHA TOSHIBA
To: NITERRA MATERIALS CO., LTD.
Reel/Frame 073843/0532 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 17, 2008
From: TSUJI, HIDEYUKI; SAITO, AKIKO; KOBAYASHI, TADAHIKO
To: KABUSHIKI KAISHA TOSHIBA
Reel/Frame 020378/0325 →
Priority Claims (1)
JP 2007-057964 · Mar 8, 2007 · national
Continuity (1)
Related Publication 20080216484A1 · Sep 11, 2008