Method for manufacturing solid-state imaging device
A method for manufacturing solid-state imaging device for collectively manufacturing a multiplicity of solid-state imaging devices at a wafer level, the method including: a step of reducing the thickness of a cover glass wafer ( 10 ) after providing a mask material ( 12 ) to the cover glass wafer ( 10 ) including frame-shaped spacers ( 5 ); a step of releasing the mask material ( 12 ) and laminating a first support wafer ( 14 ) through a lamination member ( 16 ); a step of positioning and bonding a silicon wafer ( 18 ) and the cover glass wafer ( 10 ), the silicon wafer ( 18 ) including a second support wafer ( 22 ) laminated on the back side through a lamination member ( 24 ); a step of dicing the cover glass wafer ( 10 ) into cover glasses ( 4 ) by a whetstone ( 26 ); and a step of dicing the silicon wafer ( 18 ) by a whetstone ( 28 ).
1. A method for manufacturing solid-state imaging device, the method comprising:
a step of forming a plurality of frame-shaped spacers and a ring-shaped spacer surrounding the frame-shaped spacers along an outer periphery of a transparent substrate, on one surface of the transparent substrate that serves as a base material of a cover glass;
a step of providing a mask material on a side of the one surface of the transparent substrate to cover the frame-shaped spacers and the ring-shaped spacer;
a step of removing the transparent substrate from a side of the other surface to set thickness within a predetermined range;
a step of removing the mask material from the transparent substrate;
a step of laminating a first support wafer on the other surface of the transparent substrate, the other surface of the transparent substrate being an opposite surface to the one surface on which the spacers are formed;
a step of forming a plurality of solid-state imaging elements on one surface of a semiconductor substrate;
a step of removing the semiconductor substrate from a side of the other surface to set thickness within a predetermined range;
a step of laminating a second support wafer on the other surface of the semiconductor substrate, the other surface being of the semiconductor substrate being an opposite surface to the one surface on which the plurality of solid-state imaging elements are formed;
a step of bonding the semiconductor substrate and the transparent substrate through the spacers;
a step of releasing the first support wafer and the second support wafer from the transparent substrate and the semiconductor substrate;
a step of dicing the transparent substrate; and
a step of dicing the semiconductor substrate.
2. A method for manufacturing solid-state imaging device, the method comprising:
a step of forming a plurality of frame-shaped spacers and a ring-shaped spacer surrounding the frame-shaped spacers along an outer periphery of a transparent substrate, on one surface of the transparent substrate that serves as a base material of a cover glass;
a step of providing a mask material on a side of the one surface of the transparent substrate to cover the frame-shaped spacers and the ring-shaped spacer;
a step of removing the transparent substrate from a side of the other surface to set thickness within a predetermined range;
a step of removing the mask material from the transparent substrate;
a step of laminating a first support wafer on the other surface of the transparent substrate, the other surface of the transparent substrate being an opposite surface to the one surface on which the spacers are formed;
a step of dicing the transparent substrate into cover glasses;
a step of forming a plurality of solid-state imaging elements on one surface of a semiconductor substrate;
a step of removing the semiconductor substrate from a side of the other surface to set thickness within a predetermined range;
a step of laminating a second support wafer on the other surface of the semiconductor substrate, the other surface of the semiconductor substrate being an opposite surface to the one surface on which the plurality of solid-state imaging elements are formed;
a step of bonding the semiconductor substrate and the cover glasses through the spacers;
a step of releasing the first support wafer and the second support wafer from the transparent substrate and the semiconductor substrate; and
a step of dicing the semiconductor substrate.
3. The method for manufacturing solid-state imaging device according to claim 1 , wherein
the step of removing the transparent substrate from the side of the other surface to set the thickness within a predetermined range is a step of etching the transparent substrate from the side of the other surface by a chemical including hydrofluoric acid as a principal component.
4. The method for manufacturing solid-state imaging device according to claim 3 , wherein
the mask material is constituted by a material resistant to hydrofluoric acid.
5. The method for manufacturing solid-state imaging device according to claim 1 , wherein
the step of removing the transparent substrate from the side of the other side to set the thickness within a predetermined range is a step of polishing the transparent substrate from the side of the other surface by lapping and/or polishing.
6. The method for manufacturing solid-state imaging device according to claim 1 , wherein
the mask material is a one-sided tape or an application solution in which the adhesive strength is reduced when external energy is provided.
7. The method for manufacturing solid-state imaging device according to claim 1 , wherein
a member for laminating the transparent substrate and the first support wafer is a two-sided tape or an adhesive with a self-release property.
8. The method for manufacturing solid-state imaging device according to claim 1 , wherein
a member for laminating the semiconductor substrate and the second support wafer is a two-sided tape or an adhesive with a self-release property.
9. The method for manufacturing solid-state imaging device according to claim 2 , wherein
the step of removing the transparent substrate from the side of the other surface to set the thickness within a predetermined range is a step of etching the transparent substrate from the side of the other surface by a chemical including hydrofluoric acid as a principal component.
10. The method for manufacturing solid-state imaging device according to claim 9 , wherein
the mask material is constituted by a material resistant to hydrofluoric acid.
11. The method for manufacturing solid-state imaging device according to claim 2 , wherein
the step of removing the transparent substrate from the side of the other side to set the thickness within a predetermined range is a step of polishing the transparent substrate from the side of the other surface by lapping and/or polishing.