Driving method and driving circuit of schottky type transistor

1. A driving method of a schottky type transistor, the driving method comprising:

supplying a lower voltage than a breakdown voltage of the schottky type transistor to a gate of the schottky type transistor, at the time of rising of an input signal; and

thereafter supplying a higher voltage than the breakdown voltage to a resistance connected to the gate of the schottky type transistor.

2. The driving method of the schottky type transistor, according to claim 1 , wherein the schottky type transistor is a GaN transistor.

3. The driving method of the schottky type transistor, according to claim 1 , wherein a resistance value R 1 of the resistance is set equal to or more than a value given by an equation: R 1 =(V G1 −V G2 )/I G , where V G1 denotes a maximum value of the voltage supplied to the resistance; V G2 denotes the breakdown voltage of the schottky type transistor; and I G denotes a current fed via the resistance through the gate of the schottky type transistor at the occurrence of a breakdown.

4. A driving circuit of a schottky type transistor, the driving circuit comprising:

an input terminal supplied with an input signal;

an output terminal connected to a gate of the schottky type transistor; and

an electronic circuit provided between the input terminal and the output terminal,

wherein the electronic circuit outputs a first voltage lower than a breakdown voltage of the schottky type transistor to the output terminal at the time of rising of the input signal, and thereafter supplies a second voltage higher than the breakdown voltage to a resistance connected to the output terminal.

5. The driving circuit of the schottky type transistor, according to claim 4 , wherein a resistance value R 1 of the resistance is set equal to or more than a value given by an equation: R 1 =(V G1 −V G2 )/I G , where V G1 denotes a maximum value of the voltage supplied to the resistance; V G2 denotes the breakdown voltage of the schottky type transistor; and I G denotes a current fed via the resistance through the gate of the schottky type transistor at the occurrence of a breakdown.

6. The driving circuit of the schottky type transistor, according to claim 4 ,

wherein the electronic circuit includes

a diode having an anode connected to a first power supply line supplied with a lower voltage than the breakdown voltage of the schottky type transistor, and having a cathode connected to a first node, and

a switching element connected between the first node and a second node, and configured to be turned on or off according to the input signal,

the resistance is connected between the first node and a second power supply line supplied with a higher voltage than the breakdown voltage of the schottky type transistor, and

the second node is connected to the output terminal.

7. The driving circuit of the schottky type transistor, according to claim 4 ,

wherein the electronic circuit includes

a first node supplied with a voltage according to the input signal,

a switching element and a first diode connected in series between a second node and a power supply line supplied with a lower voltage than the breakdown voltage of the schottky type transistor, and

a second diode and the resistance connected in series between the first node and the second node,

the second node is connected to the output terminal, and

the switching element is turned on or off according to the input signal.

8. The driving circuit of the schottky type transistor, according to claim 4 ,

wherein the electronic circuit includes

a driving signal generator configured to output a first driving signal and a second driving signal in order according to a voltage of the input signal,

a first switching element connected between the output terminal and a first power supply line supplied with a lower voltage than the breakdown voltage of the schottky type transistor, and configured to be turned on or off by the first driving signal, and

a second switching element connected between the output terminal and a second power supply line supplied with a higher voltage than the breakdown voltage of the schottky type transistor, and configured to be turned on or off by the second driving signal, and

the resistance is connected between the second power supply line and the second switching element or between the second switching element and the output terminal.

9. A schottky type transistor circuit comprising:

a schottky type transistor; and

a driving circuit connected to the schottky type transistor,

wherein the driving circuit supplies a first voltage lower than a breakdown voltage of the schottky type transistor to a gate of the schottky type transistor at the time of rising of an input signal, and thereafter supplies a second voltage higher than the breakdown voltage to a resistance connected to the gate of the schottky type transistor.

10. The schottky type transistor circuit according to claim 9 , wherein the schottky type transistor is a GaN transistor.

11. The schottky type transistor circuit according to claim 9 , wherein a resistance value R 1 of the resistance is set equal to or more than a value given by an equation: R 1 =(V G1 −V G2 ) /I G , where V G1 denotes a maximum value of the voltage supplied to the resistance; V G2 denotes the breakdown voltage of the schottky type transistor; and I G denotes a current fed via the resistance through the gate of the schottky type transistor at the occurrence of a breakdown.

12. The schottky type transistor circuit according to claim 9 ,

wherein the driving circuit includes

a diode having an anode connected to a first power supply line supplied with a lower voltage than the breakdown voltage of the schottky type transistor, and having a cathode connected to a first node, and

a switching element connected between the first node and a second node, and configured to be turned on or off according to the input signal,

the resistance is connected between the first node and a second power supply line supplied with a higher voltage than the breakdown voltage of the schottky type transistor, and

the second node is connected to the gate of the schottky type transistor.

13. The schottky type transistor circuit according to claim 9 ,

wherein the driving circuit includes

a first node supplied with a voltage according to the input signal,

a switching element and a first diode connected in series between a power supply line supplied with a lower voltage than the breakdown voltage of the schottky type transistor and a second node, and

a second diode and the resistance connected in series between the first node and the second node,

the second node is connected to the gate of the schottky type transistor, and

the switching element is turned on or off according to the input signal.

14. The schottky type transistor circuit according to claim 9 ,

wherein the driving circuit includes

a driving signal generator configured to output a first driving signal and a second driving signal in order according to a voltage of the input signal,

a first switching element connected between the gate of the schottky type transistor and a first power supply line supplied with a lower voltage than the breakdown voltage of the schottky type transistor, and configured to be turned on or off by the first driving signal, and

a second switching element connected between the gate of the schottky type transistor and a second power supply line supplied with a higher voltage than the breakdown voltage of the schottky type transistor, and configured to be turned on or off by the second driving signal, and

the resistance is connected between the second power supply line and the second switching element or between the second switching element and the output terminal.