Methods of forming capacitive sensors
The present disclosure includes methods of forming capacitive sensors. One method includes forming a first electrode array of the capacitive sensor on a first structure. Forming the first electrode array can include: forming a dielectric material on a substrate material; forming an electrode material on the dielectric material; removing portions of the electrode material to form a number of electrodes separated from each other; and removing at least a portion of the dielectric material from between the number of electrodes. The method can include bonding the first structure to a second structure having a second electrode array of the capacitive sensor formed thereon such that the number of electrodes of the first electrode array face a number of electrodes of the second electrode array.
1. A method of forming a capacitive sensor, the method comprising:
forming a first electrode array of the capacitive sensor on a first structure, wherein forming the first electrode array includes:
forming a dielectric material on a substrate material;
forming an electrode material on the dielectric material;
removing portions of the electrode material to form a number of electrodes separated from each other; and
removing at least a portion of the dielectric material from between the number of electrodes; and
bonding the first structure to a second structure having a second electrode array of the capacitive sensor formed thereon such that the number of electrodes of the first electrode array face a number of electrodes of the second electrode array.
2. The method of claim 1 , including performing an etch in which the number of electrodes are used as a mask to remove the at least a portion of the dielectric material from between the number of electrodes.
3. The method of claim 1 , including forming the dielectric material on the substrate material such that a thickness of the dielectric material is sufficient to substantially eliminate electrical energy within the substrate material resulting from parasitic capacitance between adjacent electrodes of the first electrode array.
4. The method of claim 1 , including forming the dielectric material to a thickness of at least two microns.
5. The method of claim 1 , including forming the capacitive sensor such that the first electrode array is moveable with respect to the second electrode array, wherein changes in capacitance between the electrodes of the first array and the electrodes of the second array correspond to a detectable physical quantity.
6. The method of claim 1 , including forming the second electrode array on the second structure by:
forming a dielectric material on a substrate material;
forming an electrode material on the dielectric material;
removing portions of the electrode material to form the number of electrodes of the second array; and
removing at least a portion of the dielectric material from between the number of electrodes by performing an etch in which the number of electrodes of the second array are used as a mask.