Methods for improved growth of group III nitride buffer layers
Methods are disclosed for growing high crystal quality group III-nitride epitaxial layers with advanced multiple buffer layer techniques. In an embodiment, a method includes forming group III-nitride buffer layers that contain aluminum on suitable substrate in a processing chamber of a hydride vapor phase epitaxy processing system. A hydrogen halide or halogen gas is flowing into the growth zone during deposition of buffer layers to suppress homogeneous particle formation. Some combinations of low temperature buffers that contain aluminum (e.g., AlN, AlGaN) and high temperature buffers that contain aluminum (e.g., AlN, AlGaN) may be used to improve crystal quality and morphology of subsequently grown group III-nitride epitaxial layers. The buffer may be deposited on the substrate, or on the surface of another buffer. The additional buffer layers may be added as interlayers in group III-nitride layers (e.g., GaN, AlGaN, AlN).
1. A method of depositing multiple buffer layers in a processing chamber of a hydride vapor phase epitaxy processing system, comprising:
providing a substrate in the processing chamber of the hydride vapor phase epitaxy processing system;
forming a first group III nitride buffer layer that contains aluminum by
flowing ammonia gas to a growth zone of the processing chamber,
flowing one or more metal halide containing precursors including at least one aluminum halide containing precursor, and
flowing halogen gas or hydrogen halide gas into the growth zone at the same time; and
forming a second group III nitride buffer layer that contains aluminum over the first buffer layer by
flowing ammonia gas to a growth zone of the processing chamber,
flowing one or more metal halide containing precursors including at least one aluminum halide containing precursor, and
flowing halogen gas or hydrogen halide gas into the growth zone at the same time, wherein the first group III-nitride buffer layer is aluminum nitride (AlN) layer formed at a temperature of approximately 500 to 800 degrees Celsius, the second group III-nitride buffer layer is aluminum nitride (AlN) layer formed at a temperature of 900 degrees Celsius or higher.
2. The method of claim 1 , further comprising:
forming a group III-nitride layer over the buffer layers, wherein the first group III nitride buffer layer comprises an initial layer or a nucleation layer.
3. The method of claim 2 , wherein the group III-nitride layer is formed by reacting the at least one metal halide containing precursor and ammonia gas.
4. The method of claim 1 , wherein the aluminum halide containing precursor comprises an aluminum chloride gas, wherein the hydrogen halide gas comprises a hydrogen chloride (HCl) gas.
5. The method of claim 1 , wherein the halogen gas comprises a chlorine (Cl2) gas.
6. The method of claim 1 , wherein the halogen gas or hydrogen halide gas that is flowed into the growth zone suppresses homogeneous formation of particles.
7. The method of claim 1 , further comprising:
stopping the flow of all metal halide containing precursors while continuing to flow the halogen gas or hydrogen halide gas and ammonia into the growth zone of the processing chamber for a time period.
8. The method of claim 1 , wherein the one or more metal halide containing precursors comprise at least one of an aluminum trichloride (AlCl3) precursor, an aluminum monochloride (AlCl) precursor, an aluminum tribromide (AlBr3) precursor, a gallium monochloride (GaCl) precursor, and a gallium trichloride (GaCl3) precursor.
9. The method of claim 1 , further comprising:
forming a third group III-nitride buffer layer that contains aluminum over the second buffer layer by flowing ammonia gas to a growth zone of the processing chamber, flowing one or more metal halide containing precursors including at least one aluminum halide containing precursor, and flowing halogen gas or hydrogen halide gas into the growth zone at the same time; and
forming a group III-nitride layer over the third buffer layer.
10. A method, comprising:
providing a substrate in a processing chamber;
forming a first group III-nitride buffer layer that contains aluminum by
flowing ammonia gas to a growth zone of the processing chamber,
flowing one or more metal halide containing precursors, and
flowing halogen gas or hydrogen halide gas into the growth zone at the same time;
forming a first group III-nitride layer over the first buffer layer;
forming a second group III-nitride buffer layer that contains aluminum over the first group III-nitride layer by
flowing ammonia gas to a growth zone of the processing chamber,
flowing one or more metal halide containing precursors, and
flowing halogen gas or hydrogen halide gas into the growth zone at the same time; and
forming a second group III-nitride layer over the second group III-nitride buffer layer that contains aluminum, wherein the first group III-nitride buffer layer is aluminum nitride (AlN) layer formed at a temperature of approximately 500 to 800 degrees Celsius, the second group III-nitride buffer layer is aluminum nitride (AlN) layer formed at a temperature of 900 degrees Celsius or higher.
11. The method of claim 10 , wherein the first and second group III-nitride layers are formed by reacting the at least one metal halide containing precursor and ammonia gas.
12. The method of claim 10 , wherein the one or more metal halide containing precursors include at least one aluminum halide containing precursor, wherein the hydrogen halide gas is a hydrogen chloride (HCl) gas.
13. The method of claim 10 , wherein the halogen gas is a chlorine (Cl2) gas.
14. The method of claim 10 , wherein the halogen gas or hydrogen halide gas that is flowed into the growth zone suppresses homogeneous formation of particles.
15. The method of claim 10 , wherein the substrate is sapphire substrate.
16. The method of claim 10 , further comprising:
stopping the flow of all metal halide containing precursors while continuing to flow the halogen gas or hydrogen halide gas and ammonia into the growth zone of the processing chamber for a time period.
17. The method of claim 10 , wherein the one or more metal halide containing precursors comprise at least one of an aluminum trichloride (AlCl3) precursor, an aluminum monochloride (AlCl) precursor, an aluminum tribromide (AlBr3) precursor, a gallium monochloride (GaCl) precursor, and a gallium trichloride (GaCl3) precursor.