Photosensor operating in accordacne with specific voltages and display device including same
By reducing the potential drop of a storage node that occurs due to feedthrough, the capacitance of a storage capacitor is reduced and sensor sensitivity is improved. In a photosensor, the first terminal of a storage capacitor (C 2 ) and the gate of a MOS transistor (M 1 ), which outputs a signal in accordance with the potential of a storage node (N 2 ), are connected to the storage node (N 2 ). A forward biased pulse voltage is supplied to the anode of a first photodiode (DS) in a reset period, and a reverse biased voltage is supplied to the anode of the first photodiode in a storage period and a readout period. A reverse biased voltage is supplied to the anode of a second photodiode (DM) in all operation periods. A voltage that keeps the potential of the storage node lower than the threshold value of the MOS transistor (M 1 ) is supplied to the second terminal of the storage capacitor in the reset period and the storage period, and a voltage that thrusts the potential of the storage node (N 2 ) upward to the threshold value of the MOS transistor (M 1 ) or higher is supplied to the second terminal of the storage capacitor in the readout period.
1. A photosensor comprising:
a first photodiode and a second photodiode;
a storage node to which cathodes of the first and second photodiodes are connected;
a storage capacitor, a first terminal of which is connected to the storage node; and
a MOS transistor, a gate of which is connected to the storage node, that outputs a signal in accordance with the potential of the storage node,
wherein, a forward biased pulse voltage is supplied to an anode of the first photodiode in a reset period, and a reverse biased voltage is supplied to the anode of the first photodiode in a storage period and a readout period,
a reverse biased voltage is supplied to an anode of the second photodiode in all operation periods, and
a voltage that holds the potential of the storage node in a range less than a threshold value of the MOS transistor is supplied to a second terminal of the storage capacitor in the reset period and the storage period, and a voltage that thrusts the potential of the storage node upward to a range greater than or equal to the threshold value of the MOS transistor is supplied to the second terminal of the storage capacitor in the readout period.
2. The photosensor according to claim 1 , wherein a parasitic capacitance of the first photodiode is lower than that of the second photodiode.
3. The photosensor according to claim 1 , wherein the reverse biased voltage supplied to the anode of the second photodiode is the same as the reverse biased voltage supplied to the anode of the first photodiode.
4. The photosensor according to claim 1 , wherein the voltage supplied to the second terminal of the storage capacitor in the readout period is set such that the potential of the storage node is limited to a range in which the MOS transistor operates in a linear region.
5. The photosensor according to claim 1 ,
wherein the anode of the first photodiode is connected to a reset control line via which the forward biased pulse voltage is supplied in the reset period,
the anode of the second photodiode is connected to a reverse biased voltage supply line via which a reverse biased voltage is supplied in all operation periods, and
in the readout period, the second terminal of the storage capacitor is connected to a readout control line via which the voltage according to which the potential of the storage node is thrust upward to the threshold value of the MOS transistor or greater is supplied.
6. A display device comprising:
a display panel having a pixel region in which a plurality of pixel blocks are arranged; and
a driving circuit that performs signal processing for driving an element configuring the pixel region,
wherein each of the pixel blocks includes a display portion configured by a display element, and a photosensor portion for detecting incident light, and
each of the photosensor portions is configured by the photosensor according to claim 1 .
7. The display device according to claim 6 ,
wherein each of the pixel blocks includes one display portion and one photosensor portion, and
each of the photosensor portions comprises one first photodiode, one second photodiode, one storage capacitor, and one MOS transistor.
8. The display device according to claim 6 ,
wherein each of the pixel blocks includes one display portion and one photosensor portion, and
each of the photosensor portions comprises one first photodiode, one second photodiode, two storage capacitors, and one MOS transistor.
9. The display device according to claim 6 ,
wherein each of the pixel blocks includes two display portions and one photosensor portion, and
each of the photosensor portions comprises one first photodiode, four second photodiodes, five storage capacitors, and one MOS transistor.
10. The display device according to claim 6 ,
wherein each of the pixel blocks includes two display portions and one photosensor portion, and
each of the photosensor portions comprises two first photodiodes, three second photodiodes, five storage capacitors, and one MOS transistor.
11. The display device according to claim 6 ,
wherein each of the pixel blocks includes two display portions and one photosensor portion, and
each of the photosensor portions comprises one first photodiode, three second photodiodes, four storage capacitors, and two MOS transistors.
12. The display device according to claim 6 ,
wherein each of the pixel blocks includes four display portions and one photosensor portion, and
each of the photosensor portions comprises two first photodiodes, eight second photodiodes, ten storage capacitors, and two MOS transistors.
13. The display device according to claim 6 , wherein each of the display portions includes three primary color display elements.