IP Library › Granted Patent US 8,783,101
Granted Patent B2
US 8,783,101 · App. 13/380,053 · Granted Jul 22, 2014

Rapid response relative humidity sensor using anodic aluminum oxide film

Inventors: Chun Zhang (Hong Kong, HK); Jianying Miao (Hong Kong, HK); Ning Wang (Hong Kong, HK)
Assignee: Nano and Advanced Materials Institute Limited
G01N27/223
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Quick Facts
Patent No.
US 8,783,101
App. No.
13/380,053
Granted
Jul 22, 2014
Kind
B2
Abstract

A rapid response relative humidity sensor based on nano-structured aluminum oxide thin film is disclosed. The main body of the sensor is an anodic aluminum oxide thin film of about 2-20 μm thick formed from an Al substrate which serves as one electrode. A porous metal layer of about 20-200 nm thick is formed over the anodic aluminum oxide thin film and functions as a second electrode. The alumina thin film contains nano-sized channels of about 10-100 nm in diameter, serving as a capacitive relative humidity sensor having high sensitivity and short response time. Thermal annealing at elevated temperature improves the linearity of the capacitance versus humidity curve, giving a full range humidity sensing range. Hysteresis and degradation are negligible for the humidity sensors.

Claims (23)

1. A capacitive humidity sensor having a substantially linear response and capable of detecting relative humidity in a full range of 0 to 100% relative humidity, the humidity sensor comprising:

an aluminum substrate forming one electrode of the capacitive humidity sensor;

an anodic aluminum oxide thin film formed from at least a portion of the aluminum substrate and having a thickness of 2-20 μm formed on a portion of the aluminum substrate, the anodic aluminum oxide film having channels with a channel diameter from 10 nm to 100 nm configured to adsorb water vapor from an ambient environment; and

a porous metal layer formed on a portion of the anodic aluminum oxide film formed on the aluminum substrate, the porous metal layer forming a second electrode of the capacitive humidity sensor, the aluminum substrate, anodic aluminum oxide thin film and porous metal layer having undergone heat treatment to produce a substantially linear humidity versus capacitance sensor response,

wherein said heat treatment is selected from one of the following conditions:

a) annealing at a temperature of 85° C. for 5-50 hours at 90% relative humidity;

b) annealing at a temperature of 90° C. for 5-50 hours in dry air; or

c) immersion in boiling water at a temperature of 100° C. for 10-100 minutes; and

wherein a response time of said capacitive humidity sensor is less than 6 seconds when the channel diameter is larger than 10 nm.

2. The capacitive humidity sensor according to claim 1 , wherein the response time is less than 1 second when the channel diameter is larger than 40 nm.

3. The capacitive humidity sensor according to claim 1 further comprising metal electrode pins extending from the aluminum substrate and the porous metal layer.

4. The capacitive humidity sensor according to claim 1 wherein the aluminum substrate is plate-shaped with two integrally formed electrode legs extending therefrom, one of the electrode legs comprising unanodized aluminum and the other electrode leg comprising anodized aluminum with the porous metal layer formed thereon.

5. The capacitive humidity sensor according to claim 1 , wherein the aluminum substrate is plate shaped with an attached electrode leg extending from an unanodized portion of the aluminum substrate and another attached electrode leg extending from the anodized portion of the aluminum substrate having the porous metal layer formed thereon.

6. A process for fabricating the capacitive humidity sensor of claim 1 comprising:

forming an aluminum template from an aluminum substrate;

anodizing at least a portion of the aluminum template;

depositing a porous metal film on at least a portion of the anodized aluminum template; and

thermally treating the resulting multilayer structure to create a substantially linear humidity versus capacitance response humidity sensor.

7. A method according to claim 6 , wherein anodizing is carried out in oxalic acid, or sulfuric acid, or phosphoric acid, or nitric acid, or a mixture thereof.

8. A method according to claim 6 , the porous metal film is aluminum, copper, gold, platinum, palladium, or nichrome.

9. A method according to claim 6 , wherein the thermal treatment comprises annealing at a temperature of 85° C. for 5-50 hours at 90% relative humidity.

10. A method according to claim 6 , wherein the thermal treatment comprises annealing at a temperature of 90° C. for 5-50 hours in dry air.

11. A method according to claim 6 , wherein the thermal treatment comprises immersion in boiling water at a temperature of 100° C. for 10-100 minutes.

Assignments (2)
CORRECTIVE ASSIGNMENT TO CORRECT THE CHANGE SPELLING OF NAME OF SECOND ASSIGNOR, JIANYING MAO TO "JIANYING MIAO" PREVIOUSLY RECORDED ON REEL 027438 FRAME 0932. ASSIGNOR(S) HEREBY CONFIRMS THE PAGE 1, LINE 2 OF "ASSIGNEMENT BY INVENTORS" IDENTIFIES THE INVENTOR AS "JIANYING MIAO". Recorded Dec 28, 2011
From: ZHANG, CHUN; MIAO, JIANYING; WANG, NING
To: NANO AND ADVANCED MATERIALS INSTITUTE LIMITED
Reel/Frame 027463/0663 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 23, 2011
From: ZHANG, CHUN; MAO, JIANYING; WANG, NING
To: NANO AND ADVANCED MATERIALS INSTITUTE LIMITED
Reel/Frame 027438/0932 →
Continuity (2)
Provisional Application 61282139 · Dec 22, 2009
Related Publication 20120247203A1 · Oct 4, 2012