Semiconductor device and electronic device having the same
View Patent ↗It is an object of the present invention to provide a wireless chip of which mechanical strength can be increased. Moreover, it is an object of the present invention to provide a wireless chip which can prevent an electric wave from being blocked. The invention is a wireless chip in which a layer having a thin film transistor is fixed to an antenna by an anisotropic conductive adhesive or a conductive layer, and the thin film transistor is connected to the antenna. The antenna has a dielectric layer, a first conductive layer, and a second conductive layer. The dielectric layer is sandwiched between the first conductive layer and the second conductive layer. The first conductive layer serves as a radiating electrode and the second conductive layer serves as a ground contact body.
1. A semiconductor device comprising:
a first layer comprising a transistor;
a first connection terminal connected with said transistor and provided on said first layer comprising said transistor;
a second layer comprising a passive element selected from the group consisting of inductor, capacitor and resistor;
a second connection terminal provided on a first surface of said second layer comprising said passive element;
a third connection terminal provided on a second surface of said second layer provided opposite to said first surface;
an organic resin layer comprising a conductive particle dispersed in an adhesive resin and connecting said first connection terminal with said second connection terminal by the conductive particle;
an antenna comprising a power feeding layer, a first conductive layer and a second conductive layer functioning as a ground body, said antenna further comprising a dielectric layer provided between said first conductive layer and said second conductive layer; and
a connection layer electrically connecting said third connection terminal with said antenna,
wherein the first conductive layer is formed on a first surface of the dielectric layer,
wherein the second conductive layer is formed on a second surface of the dielectric layer, and
wherein the power feeding layer is formed on a side, the first and the second surface of the dielectric layer.
2. A device according to claim 1 wherein said first layer comprising said transistor has a thickness of 1 μm to 10 μm.
3. A device according to claim 1 wherein said first layer comprising said transistor has a thickness of 1 μm to 5 μm.
4. A device according to claim 1 wherein said first layer comprising said transistor is provided over a flexible insulating substrate.
5. A device according to claim 4 wherein said transistor comprises an organic semiconductor layer.
6. A device according to claim 1 wherein said first layer comprising said transistor is attached to a flexible insulating substrate through an organic resin.
7. A device according to claim 1 wherein said first layer comprising said transistor comprises lamination of plural layers each comprising a corresponding transistor.
8. A device according to claim 1 wherein said connection layer comprises another organic resin layer comprising another conductive particle.
9. A device according to claim 1 wherein said connection layer comprises a third conductive layer.
10. A device according to claim 1 wherein said semiconductor device comprises a high frequency circuit.
11. A device according to claim 1 wherein said semiconductor device comprises a microprocessor.
12. A device according to claim 1 wherein said semiconductor device comprises a sensor.
13. A device according to claim 1 wherein said dielectric layer comprises a material selected from the group consisting of alumina, glass, forsterite, barium titanate, lead titanate, strontium titanate, lead zirconate, lithium niobate, and lead zirconium titanate.
14. A device according to claim 1 wherein said dielectric layer comprises a material selected from the group consisting of an epoxy resin, a phenol resin, a polybutadiene resin, bismaleimide triazine resin, vinylbenzyl, and polyfumarate.
15. A device according to claim 1 wherein said layer comprising said transistor constitutes at least one of a power source circuit, a clock generation circuit and a data demodulation and modulation circuit.
16. An electronic device comprising said semiconductor device according to claim 1 .
17. A device according to claim 16 wherein said electronic device is selected from the group consisting of a liquid crystal display device, an EL display device, a television device, a cellular phone, a printer, a camera, a personal computer, a goggle with earphones, a speaker device, a headphone, a navigation device, and an electronic key.
18. A device according to claim 1 wherein the transistor is a thin film transistor.
19. A semiconductor device comprising:
a first layer comprising a first transistor;
a first connection terminal connected with said first transistor and provided on said first layer comprising said first transistor;
a second layer comprising a second transistor;
a second connection terminal provided on a first surface of said second layer comprising said second transistor;
a third connection terminal provided on a second surface of said second layer opposite to said first surface;
a first organic resin layer comprising a first conductive particle dispersed in a first adhesive resin and connecting said first connection terminal with said second connection terminal by the first conductive particle;
an antenna comprising a power feeding layer, a first conductive layer and a second conductive layer functioning as a ground body, said antenna further comprising a dielectric layer provided between said first conductive layer and said second conductive layer; and
a second organic resin layer comprising a second conductive particle dispersed in a second adhesive resin and connecting said third connection terminal with said antenna by the second conductive particle,
wherein the first conductive layer is formed on a first surface of the dielectric layer,
wherein the second conductive layer is formed on a second surface of the dielectric layer, and
wherein the power feeding layer is formed on a side, the first and the second surface of the dielectric layer.
20. A device according to claim 19 wherein said first layer comprising said first transistor or said second layer comprising said second transistor has a thickness of 1 μm to 10 μm.
21. A device according to claim 19 wherein said first layer comprising said first transistor or said second layer comprising said second transistor has a thickness of 1 μm to 5 μm.
22. A device according to claim 19 wherein said first layer comprising said first transistor is provided over a flexible insulating substrate.
23. A device according to claim 22 wherein said first transistor comprises an organic semiconductor layer.
24. A device according to claim 19 wherein said first layer comprising said first transistor is attached to a flexible insulating substrate through an organic resin.
25. A device according to claim 19 wherein said semiconductor device comprises a high frequency circuit.
26. A device according to claim 19 wherein said semiconductor device comprises a microprocessor.
27. A device according to claim 19 wherein said semiconductor device comprises a sensor.
28. A device according to claim 19 wherein said dielectric layer comprises a material selected from the group consisting of alumina, glass, forsterite, barium titanate, lead titanate, strontium titanate, lead zirconate, lithium niobate, and lead zirconium titanate.
29. A device according to claim 19 wherein said dielectric layer comprises a material selected from the group consisting of an epoxy resin, a phenol resin, a polybutadiene resin, a bismaleimide triazine resin, vinylbenzyl, and polyfumarate.
30. A device according to claim 19 wherein at least one of said first layer comprising said first transistor and said second layer comprising said second transistor constitutes at least one of a power source circuit, a clock generation circuit and a data demodulation and modulation circuit.
31. An electronic device comprising said semiconductor device according to claim 19 .
32. An electronic device according to claim 31 wherein said electronic device is selected from the group consisting of a liquid crystal display device, an EL display device, a television device, a cellular phone, a printer, a camera, a personal computer, a goggle with earphones, a speaker device, a headphone, a navigation device, and an electronic key.
33. A device according to claim 19 wherein the transistor is a thin film transistor.
34. A semiconductor device comprising:
a first layer comprising a first transistor;
a first connection terminal connected with said first transistor and provided on said first layer comprising said first transistor;
a second layer comprising a second transistor;
a second connection terminal provided on a first surface of said second layer comprising said second transistor;
a third connection terminal provided on a second surface of said second layer opposite to said first surface;
a first organic resin layer comprising a first conductive particle dispersed in a first adhesive resin and connecting said first connection terminal with said second connection terminal by the first conductive particle;
a layer comprising a passive element selected from the group consisting of inductor, capacitor and resistor;
a fourth connection terminal provided on a first surface of said layer comprising said passive element;
a fifth connection terminal provided on a second surface of said layer comprising said passive element opposite to said first surface of said layer comprising said passive element;
a second organic resin layer comprising a second conductive particle dispersed in a second adhesive resin and connecting said third connection terminal with said fourth connection terminal by the second conductive particle;
an antenna comprising a power feeding layer, a first conductive layer and a second conductive layer functioning as a ground body, said antenna further comprising a dielectric layer provided between said first conductive layer and said second conductive layer; and
a connection layer electrically connecting said fifth connection terminal with said antenna,
wherein the first conductive layer is formed on a first surface of the dielectric layer,
wherein the second conductive layer is formed on a second surface of the dielectric layer, and
wherein the power feeding layer is formed on a side, the first and the second surface of the dielectric layer.
35. A device according to claim 34 wherein said first layer comprising said first transistor or said second layer comprising said second transistor has a thickness of 1 μm to 10 μm.
36. A device according to claim 34 wherein said first layer comprising said first transistor or said second layer comprising said second transistor has a thickness of 1 μm to 5 μm.
37. A device according to claim 34 wherein said first layer comprising said first transistor is provided over a flexible insulating substrate.
38. A device according to claim 37 wherein said first transistor comprises an organic semiconductor layer.
39. A device according to claim 34 wherein said first layer comprising said first transistor is attached to a flexible insulating substrate through an organic resin.
40. A device according to claim 34 wherein said connection layer comprises a third organic resin layer comprising a third conductive particle.
41. A device according to claim 34 wherein said connection layer comprises a third conductive layer.
42. A device according to claim 34 wherein said semiconductor device comprises a high frequency circuit.
43. A device according to claim 34 wherein said semiconductor device comprises a microprocessor.
44. A device according to claim 34 wherein said semiconductor device comprises a sensor.
45. A device according to claim 34 wherein said dielectric layer comprises a material selected from the group consisting of alumina, glass, forsterite, barium titanate, lead titanate, strontium titanate, lead zirconate, lithium niobate, and lead zirconium titanate.
46. A device according to claim 34 wherein said dielectric layer comprises a material selected from the group consisting of an epoxy resin, a phenol resin, a polybutadiene resin, bismaleimide triazine resin, vinylbenzyl, and polyfumarate.
47. A device according to claim 34 wherein at least one of said first layer comprising said first transistor and said second layer comprising said second transistor constitutes at least one of a power source circuit, a clock generation circuit and a data demodulation and modulation circuit.
48. An electronic device comprising said semiconductor device according to claim 34 .
49. A device according to claim 48 wherein said electronic device is selected from the group consisting of a liquid crystal display device, an EL display device, a television device, a cellular phone, a printer, a camera, a personal computer, a goggle with earphones, a speaker device, a headphone, a navigation device and an electronic key.
50. A device according to claim 34 wherein the transistor is a thin film transistor.
51. A semiconductor device comprising:
a layer comprising a first transistor and a second transistor and a first antenna connected with said first transistor;
a connection terminal connected with said second transistor and provided on said layer comprising said first transistor and said second transistor and said first antenna;
a second antenna comprising a power feeding laver, a first conductive layer and a second conductive layer functioning as a ground body, said second antenna further comprising a dielectric layer provided between said first conductive layer and said second conductive layer; and
an organic resin layer comprising a conductive particle dispersed in an adhesive resin and connecting said connection terminal with said second antenna by the conductive particle,
wherein the first conductive layer is formed on a first surface of the dielectric layer,
wherein the second conductive layer is formed on a second surface of the dielectric layer, and
wherein the power feeding layer is formed on a side, the first and the second surface of the dielectric layer.
52. A device according to claim 51 wherein said layer comprising said first transistor and said second transistor and said first antenna is provided over a flexible insulating substrate.
53. A device according to claim 52 wherein each of said first transistor and said second transistor comprises an organic semiconductor layer.
54. A device according to claim 51 wherein said layer comprising said first transistor and said second transistor and said first antenna is attached to a flexible insulating substrate through an organic resin.
55. A device according to claim 51 wherein said semiconductor device comprises a high frequency circuit.
56. A device according to claim 51 wherein said semiconductor device comprises a microprocessor.
57. A device according to claim 51 wherein said semiconductor device comprises a sensor.
58. A device according to claim 51 wherein said dielectric layer comprises a material selected from the group consisting of alumina, glass, forsterite, barium titanate, lead titanate, strontium titanate, lead zirconate, lithium-niobate, and lead zirconium titanate.
59. A device according to claim 51 wherein said dielectric layer comprises a material selected from the group consisting of an epoxy resin, a phenol resin, a polybutadiene resin, a bismaleimide triazine resin, vinylbenzyl, and polyfumarate.
60. A device according to claim 51 wherein said layer comprising said first transistor and said second transistor and said first antenna constitutes at least one of a power source circuit, a clock generation circuit and a data demodulation and modulation circuit.
61. An electronic device comprising said semiconductor device according to claim 51 .
62. A device according to claim 61 wherein said electronic device is selected from the group consisting of a liquid crystal display device, an EL display device, a television device, a cellular phone, a printer, a camera, a personal computer, a goggle with earphones, a speaker device, a headphone, a navigation device, and an electronic key.
63. A device according to claim 51 wherein the transistor is a thin film transistor.
64. A semiconductor device comprising:
a layer comprising a first transistor and a second transistor;
a first connection terminal connected with said first transistor and provided on a first surface of said layer comprising said first transistor and said second transistor;
a second connection terminal connected with said second transistor and provided on a second surface of said layer comprising said first transistor and said second transistor opposite to said first surface;
a first antenna comprising a first power feeding layer, a first conductive layer and a second conductive layer functioning as a first ground body, said first antenna further comprising a first dielectric layer provided between said first conductive layer and said second conductive layer;
a second antenna comprising a second power feeding layer, a third conductive layer and a fourth conductive layer functioning as a second ground body, said second antenna further comprising a second dielectric layer provided between said third conductive layer and said fourth conductive layer;
a first organic resin layer comprising a first conductive particle dispersed in a first adhesive resin and connecting said first antenna with said first connection terminal by the first conductive particle; and
a second organic resin layer comprising a second conductive particle dispersed in a second adhesive resin and connecting said second antenna with said second connection terminal by the second conductive particle,
wherein the first conductive layer is formed on a first surface of the first dielectric layer,
wherein the second conductive layer is formed on a second surface of the first dielectric layer,
wherein the first power feeding layer is formed on a side, the first and the second surface of the first dielectric layer,
wherein the third conductive layer is formed on a first surface of the second dielectric layer,
wherein the fourth conductive layer is formed on a second surface of the second dielectric layer,
wherein the second power feeding layer is formed on a side, the first and the second surface of the second dielectric layer.
65. A device according to claim 64 wherein said layer comprising said first transistor and said second transistor has a thickness of 1 μm to 10 μm.
66. A device according to claim 64 wherein said layer comprising said first transistor and said second transistor has a thickness of 1 μm to 5 μm.
67. A device according to claim 64 wherein said semiconductor device comprises a high frequency circuit.
68. A device according to claim 64 wherein said semiconductor device comprises a microprocessor.
69. A device according to claim 64 wherein said semiconductor device comprises a sensor.
70. A device according to claim 64 wherein each of said first dielectric layer and said second dielectric layer comprises a material selected from the group consisting of alumina, glass, forsterite, barium titanate, lead titanate, strontium titanate, lead zirconate, lithium niobate, and lead zirconium titanate.
71. A device according to claim 64 wherein each of said first dielectric layer and said second dielectric layer comprises a material selected from the group consisting of an epoxy resin, a phenol resin, a polybutadiene resin, a bismaleimide triazine resin, vinylbenzyl, and polyfumarate.
72. A device according to claim 64 wherein said layer comprising said first transistor and said second transistor constitutes at least one of a power source circuit, a clock generation circuit and a data demodulation and modulation circuit.
73. An electronic device comprising said semiconductor device according to claim 64 .
74. A device according to claim 64 wherein the transistor is a thin film transistor.
75. A device according to claim 73 wherein said electronic device is selected from the group consisting of a liquid crystal display device, an EL display device, a television device, a cellular phone, a printer, a camera, a personal computer, a goggle with earphones, a speaker device, a headphone, a navigation device, and an electronic key.
76. A semiconductor device comprising:
a layer comprising a transistor;
a connection terminal connected with said transistor and provided on said layer comprising said transistor;
an antenna comprising a power feeding layer, a first conductive layer and a second conductive layer functioning as a ground body, said antenna further comprising a dielectric layer provided between said first conductive layer and said second conductive layer; and
an organic resin layer comprising a conductive particle dispersed in an adhesive resin and connecting said antenna with said connection terminal by the conductive particle,
wherein the first conductive layer is formed on a first surface of the dielectric layer,
wherein the second conductive layer is formed on a second surface of the dielectric layer, and
wherein the power feeding layer is formed on a side, the first and the second surface of the dielectric layer.
77. A device according to claim 76 wherein said layer comprising said transistor has a thickness of 1 μm to 10 μm.
78. A device according to claim 76 wherein said layer comprising said transistor has a thickness of 1 μm to 5 μm.
79. A device according to claim 76 wherein said layer comprising said transistor is provided over a flexible insulating substrate.
80. A device according to claim 79 wherein said transistor comprises an organic semiconductor layer.
81. A device according to claim 76 wherein said layer comprising said transistor is attached to a flexible insulating substrate through an organic resin.
82. A device according to claim 76 wherein said layer comprising said transistor comprises lamination of plural layers each comprising a corresponding transistor.
83. A device according to claim 76 wherein said semiconductor device comprises a high frequency circuit.
84. A device according to claim 76 wherein said semiconductor device comprises a microprocessor.
85. A device according to claim 76 wherein said semiconductor device comprises a sensor.
86. A device according to claim 76 wherein said dielectric layer comprises a material selected from the group consisting of alumina, glass, forsterite, barium titanate, lead titanate, strontium titanate, lead zirconate, lithium niobate, and lead zirconium titanate.
87. A device according to claim 76 wherein said dielectric layer comprises a material selected from the group consisting of an epoxy resin, a phenol resin, a polybutadiene resin, a bismaleimide triazine resin, vinylbenzyl, and polyfumarate.
88. A device according to claim 76 wherein said layer comprising said transistor constitutes at least one of a power source circuit, a clock generation circuit and a data demodulation and modulation circuit.
89. An electronic device comprising said semiconductor device according to claim 76 .
90. A device according to claim 89 wherein said electronic device is selected from the group consisting of a liquid crystal display device, an EL display device, a television device, a cellular phone, a printer, a camera, a personal computer, a goggle with earphones, a speaker device, a headphone, a navigation device, and an electronic key.
91. A device according to claim 76 wherein the transistor is a thin film transistor.