Light-emitting apparatus and production method thereof
Provided is a method of producing a light-emitting apparatus having a field effect transistor for driving an organic EL device, the field effect transistor including an oxide semiconductor containing at least one element selected from In and Zn, the method including the steps of: forming a field effect transistor on a substrate; forming an insulating layer; forming a lower electrode on the insulating layer; forming an organic layer for constituting an organic EL device on the lower electrode; forming an upper electrode on the organic layer; and after the step of forming the semiconductor layer of the field effect transistor and before the step of forming the organic layer, performing heat treatment such that an amount of a component that is desorbable as H 2 O from the field effect transistor during the step of forming the organic layer is less than 10 −5 g/m 2 .
1. A method of producing a light-emitting apparatus having a field effect transistor for driving an organic EL device, the field effect transistor comprising an oxide semiconductor layer containing at least one element selected from In and Zn, the method comprising the steps of:
forming a field effect transistor on a substrate;
forming an insulating layer;
forming a lower electrode on the insulating layer;
forming an organic layer containing at least a light-emitting layer for constituting an organic EL device on the lower electrode; and
forming an upper electrode on the organic layer,
wherein the step of forming the field effect transistor comprises a step of forming the oxide semiconductor layer, and a heat treatment step for dehydration performed successively after the forming of the oxide semiconductor layer.
2. The method according to claim 1 , further comprising a second heat treatment step, and the second heat treatment step is performed after the step of forming the insulating layer and before the step of forming the organic layer for constituting the organic EL device.
3. The method according to claim 1 , wherein the field effect transistor comprises a source electrode, a drain electrode, the semiconductor layer, a gate electrode, and a gate insulating film, and wherein the source electrode, the drain electrode, the semiconductor layer, the gate insulating film, and the gate electrode are each formed at a temperature of 300° C. or less.
4. A light-emitting apparatus produced by the method set forth in claim 1 , wherein the oxide semiconductor layer comprises an oxide at least a part of which is amorphous.
5. The light-emitting apparatus according to claim 4 , wherein an amount of a component that is present in the oxide semiconductor layer after the heat treatment step and is desorbable as H 2 O when subjected to heat treatment up to 600° C. is less than 3.0×10 −3 g/m 2 .
6. The method according to claim 1 , wherein the heat treatment step is performed such that an amount of a component that is desorbable as H 2 O from the oxide semiconductor layer during the step of forming the organic layer is less than 10 −5 g/m 2 .