IP Library Granted Patent US 8,785,522
Granted Patent B2
US 8,785,522 · App. 13/383,698 · Granted Jul 22, 2014

Low-permittivity resin composition

Inventors: Toshihiro Yano (Wakayama, JP); Masaki Komatsu (Wakayama, JP)
Assignee: Kao Corporation
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Quick Facts
Patent No.
US 8,785,522
App. No.
13/383,698
Granted
Jul 22, 2014
Kind
B2
Abstract

The present invention relates to a low-dielectric resin composition having sufficiently low dielectric constant and dissipation factor, a low-dielectric film formed of the low-dielectric resin composition, processes for producing the low-dielectric resin composition and the low-dielectric film, and a coating agent for low-dielectric films. According to the present invention, there are provided (1) a low-dielectric resin composition including hollow silica particles having an average particle size of from 0.05 to 3 μm and a BET specific surface area of less than 30 m 2 /g, and a matrix resin in which the hollow silica particles are dispersed; (2) a low-dielectric film including the low-dielectric resin composition; (3) a process for producing the low-dielectric resin composition which includes the steps of preparing hollow silica particles (A) containing air inside thereof or core/shell type silica particles (B) in which a material capable of being dissipated by calcination to form hollow portions therein is encapsulated; calcination the hollow silica particles (A) or the core/shell type silica particles (B) at a temperature higher than 950° C. to prepare hollow silica particles (C); and dispersing the hollow silica particles (C) in a matrix resin-forming material to prepare a dispersion of the particles; and (4) a coating agent for low-dielectric films including the hollow silica particles, and a matrix resin-forming material in which the hollow silica particles are dispersed.

Claims (34)

1. A low-dielectric resin composition, comprising hollow silica particles having an average particle size of from 0.05 to 2.2 μm and a BET specific surface area of less than 30 m 2 /g, and a matrix resin in which the hollow silica particles are dispersed.

2. A low-dielectric resin composition comprising hollow silica particles having an average particle size of from 0.05 to 1 μm with the proviso that 80% by mass or more of the whole particles have a particle size falling within the range of the average particle size ±30%, and a BET specific surface area of less than 30 m 2 /g, and a matrix resin in which the hollow silica particles are dispersed.

3. A low-dielectric resin composition, comprising hollow silica particles having an average particle size of from 0.05 to 2.2 μm, a porosity of from 30 to 90% and a BET specific surface area of less than 30 m 2 /g, and a matrix resin in which the hollow silica particles are dispersed.

4. The low-dielectric resin composition according to claim 1 , wherein when subjected to powder X-ray diffraction measurement, the hollow silica particles exhibit a diffraction pattern in which no peaks are observed at a diffraction angle (2θ) corresponding to a crystal lattice spacing (d) of less than 1 nm.

5. The low-dielectric resin composition according to 1 , wherein a content of the hollow silica particles in the composition is from 10 to 60% by mass.

6. The low-dielectric resin composition according to claim 3 , wherein a volume ratio of air in the resin composition is from 3 to 60%.

7. A low-dielectric film comprising a low-dielectric resin composition as defined in claim 1 .

8. A process for producing a low-dielectric resin composition as defined in claim 1 , comprising:

preparing hollow silica particles (A) comprising air inside thereof or core/shell silica particles (B) in which a material capable of being dissipated by calcination to form hollow portions therein is encapsulated;

calcining the hollow silica particles (A) or the core/shell type silica particles (B) obtained in said preparing at a temperature higher than 950° C. to prepare hollow silica particles (C); and

dispersing the hollow silica particles (C) obtained in said calcining in a matrix resin-forming material to prepare a dispersion of the particles.

9. The process for producing a low-dielectric film according to claim 8 , further comprising

applying the dispersion obtained in said dispersing onto a substrate and then solidifying the applied dispersion.

10. The process for producing a low-dielectric film according to claim 8 , wherein the matrix resin-forming material has a viscosity of from 0.1 to 20 Pa's.

11. A coating agent for low-dielectric films, comprising hollow silica particles having an average particle size of from 0.05 to 2.2 μm and a BET specific surface area of less than 30 m 2 /g, and a matrix resin-forming material in which the hollow silica particles are dispersed.

12. A coating agent for low-dielectric films comprising hollow silica particles having an average particle size of from 0.05 to 1 μm with the proviso that 80% by mass or more of the whole particles have a particle size falling within the range of the average particle size ±30%, and a BET specific surface area of less than 30 m 2 /g, and a matrix resin-forming material in which the hollow silica particles are dispersed.

13. A coating agent for low-dielectric films, comprising hollow silica particles having an average particle size of from 0.05 to 2.2 μm, a porosity of from 30 to 90% and a BET specific surface area of less than 30 m 2 /g, and a matrix resin-forming material in which the hollow silica particles are dispersed.

14. The low-dielectric resin composition according to claim 2 , wherein when subjected to powder X-ray diffraction measurement, the hollow silica particles exhibit a diffraction pattern in which no peaks are observed at a diffraction angle (2θ) corresponding to a crystal lattice spacing (d) of less than 1 nm.

15. The low-dielectric resin composition according to claim 3 , wherein when subjected to powder X-ray diffraction measurement, the hollow silica particles exhibit a diffraction pattern in which no peaks are observed at a diffraction angle (2θ) corresponding to a crystal lattice spacing (d) of less than 1 nm.

16. The low-dielectric resin composition according to claim 2 , wherein a content of the hollow silica particles in the composition is from 10 to 60% by mass.

17. The low-dielectric resin composition according to claim 3 , wherein a content of the hollow silica particles in the composition is from 10 to 60% by mass.

18. A process for producing the low-dielectric resin composition as defined in claim 2 , comprising:

preparing hollow silica particles (A) comprising air inside thereof or core/shell silica particles (B) in which a material capable of being dissipated by calcination to form hollow portions therein is encapsulated;

calcining the hollow silica particles (A) or the core/shell type silica particles (B) obtained in said preparing at a temperature higher than 950° C. to prepare hollow silica particles (C); and

dispersing the hollow silica particles (C) obtained in said calcining in a matrix resin-forming material to prepare a dispersion of the particles.

19. The process for producing a low-dielectric film according to claim 18 , further comprising:

applying the dispersion obtained in said dispersing onto a substrate and then solidifying the applied dispersion.

20. A process for producing the low-dielectric resin composition as defined in claim 3 , comprising:

preparing hollow silica particles (A) comprising air inside thereof or core/shell silica particles (B) in which a material capable of being dissipated by calcination to form hollow portions therein is encapsulated;

calcining the hollow silica particles (A) or the core/shell type silica particles (B) obtained in said preparing at a temperature higher than 950° C. to prepare hollow silica particles (C); and

dispersing the hollow silica particles (C) obtained in said calcining in a matrix resin-forming material to prepare a dispersion of the particles.

21. The process for producing a low-dielectric film according to claim 20 , further comprising:

applying the dispersion obtained in said dispersing onto a substrate and then solidifying the applied dispersion.

22. The low-dielectric resin composition according to claim 1 , wherein 80% by mass or more of all of said particles have a particle size falling within the range of the average particle size ±30%.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 17, 2012
From: YANO, TOSHIHIRO; KOMATSU, MASAKI
To: KAO CORPORATION
Reel/Frame 027541/0609 →
Priority Claims (2)
JP 2009-165257 · Jul 14, 2009 · national
JP 2010-098089 · Apr 21, 2010 · national
Continuity (1)
Related Publication 20120123021A1 · May 17, 2012