Laminate structure including oxide semiconductor thin film layer, and thin film transistor
A stacked layer structure including an oxide layer and an insulating layer, the oxide layer having a carrier concentration of 10 18 /cm 3 or less and an average crystal diameter of 1 μm or more; and the crystals of the oxide layer being arranged in a columnar shape on the surface of the insulating layer.
1. A stacked layer structure comprising an oxide layer and an insulating layer,
the oxide layer having a carrier concentration of greater than 10 13 /cm 3 to 10 18 /cm 3 and an average crystal diameter of 1 μm to less than 27 μm; and
the crystals of the oxide layer being arranged in a columnar shape on the surface of the insulating layer.
2. The stacked layer structure according to claim 1 , wherein a material which the oxide layer comprises is selected from indium oxide, Ga-doped indium oxide, Al-doped indium oxide, Zn-doped indium oxide and Sn-doped indium oxide.
3. The stacked layer structure according to claim 2 , wherein the Ga-doped indium oxide has an atomic ratio Ga/(Ga+In) of 0.01 to 0.09.
4. The stacked layer structure according to claim 2 , wherein the Al-doped indium oxide has an atomic ratio Al/(Al+In) of 0.01 to 0.05.
5. A thin film transistor comprising:
the oxide layer and the insulating layer in the stacked layer structure according to claim 1 as a channel layer and a gate insulating film respectively; and
a protecting film which comprises SiNx being provided on the oxide layer.
6. A display apparatus comprising the thin film transistor according to claim 5 .