Semiconductor package integrated with conformal shield and antenna
A semiconductor package includes a substrate, a semiconductor die, a package body, an electromagnetic interference shield, a dielectric structure and an antenna element. The substrate comprises a grounding segment and a feeding point. The semiconductor die is disposed on the substrate. The package body encapsulates the semiconductor die. The electromagnetic interference shield is formed on the package body. The dielectric structure encapsulates the electromagnetic interference shield. The antenna element is formed on the dielectric structure and electrically connecting the grounding segment of the substrate and the feeding point.
1. A semiconductor package, comprising:
a substrate;
a semiconductor die disposed on the substrate;
a package body encapsulating the semiconductor die and having an upper surface;
an electromagnetic interference shield formed directly on the upper surface of the package body;
a dielectric structure covering the electromagnetic interference shield;
an antenna formed on the dielectric structure;
a feeding element connecting the antenna and a feeding point of the substrate; and
an antenna grounding element connecting the antenna and the electromagnetic interference shield, wherein the feeding element penetrates the package body and the dielectric structure.
2. The semiconductor package of claim 1 , wherein the antenna grounding element is disposed within the dielectric structure.
3. The semiconductor package of claim 1 , wherein the antenna grounding element and the feeding element form an extension portion of the antenna on a lateral surface of the dielectric structure.
4. The semiconductor package of claim 1 , further comprising:
a grounding frame disposed on the substrate and connecting the substrate and the electromagnetic interference shield.
5. The semiconductor package of claim 1 , further comprising:
a dielectric material layer covering the dielectric structure;
wherein the permittivity of the dielectric material layer is higher than that of the dielectric structure.
6. The semiconductor package of claim 1 , wherein the antenna grounding element is a conductive via.
7. The semiconductor package of claim 6 , wherein the antenna grounding element penetrates the dielectric structure and connects the antenna and the electromagnetic interference shield.
8. The semiconductor package of claim 6 , wherein the antenna grounding element includes a conductive material disposed in a through hole in the dielectric structure, the through hole extending from the antenna to the electromagnetic interference shield.
9. The semiconductor package of claim 1 , wherein the electromagnetic interference shield is a film formed directly onto the package body.
10. The semiconductor package of claim 9 , wherein the film comprising the electromagnetic shield is formed by material deposition.
11. A semiconductor package, comprising:
a substrate;
a semiconductor die disposed on the substrate;
a package body encapsulating the semiconductor die and having an upper surface;
an electromagnetic interference shield disposed directly on the upper surface of the package body;
a dielectric structure covering the electromagnetic interference shield;
an antenna formed on the dielectric structure;
a feeding element connecting the antenna and a feeding point of the substrate; and
a conductive via penetrating entirely through the dielectric structure connecting the antenna and the electromagnetic interference shield, forming an antenna grounding element wherein the feeding element penetrates the package body and the dielectric structure.
12. The semiconductor package of claim 11 , further comprising:
a grounding frame disposed on the substrate and connecting the substrate and the electromagnetic interference shield.
13. The semiconductor package of claim 11 , further comprising:
a dielectric material layer covering the dielectric structure;
wherein the permittivity of the dielectric material layer is higher than that of the dielectric structure.
14. The semiconductor package of claim 13 , wherein the dielectric material layer is a ceramic material.
15. The semiconductor package of claim 11 , wherein the package body further comprises a lateral side and the electromagnetic interference shield extends to, and is disposed directly on, the lateral side.
16. A semiconductor package, comprising:
a substrate;
a die disposed on the substrate;
a package body encapsulating the die and having an upper surface;
an electromagnetic interference shield comprising a film disposed directly onto the upper surface of the package body;
a dielectric structure covering the electromagnetic interference shield;
an antenna disposed on an upper surface of the dielectric structure;
a feeding element connecting the antenna and a feeding point of the substrate; and
a conductive via formed in the dielectric structure connecting the antenna and the electromagnetic interference shield, forming an antenna grounding element wherein the feeding element penetrates the package body and the dielectric structure.
17. The semiconductor package of claim 16 , wherein the conductive via is formed in a through hole in the dielectric structure, the through hole extending from the antenna to the electromagnetic interference shield.
18. The semiconductor package of claim 16 , wherein the electromagnetic interference shield is formed by material deposition directly onto the package body.