Method for fabricating substrate with nano structures, light emitting device and manufacturing method thereof
View Patent ↗A method of fabricating a substrate with nano structures, light emitting device using the substrate and a manufacturing method thereof, wherein a substrate for growing a light emitting device is formed with nano agglomerations, and the substrate is etched by using the agglomerations as a mask to allow nano structures to be formed on the substrate, thereby enabling to grow a crystal defect-reduced, reliability-improved, good quality light emitting structure, and wherein the light emitting structure is formed with nano structures to enhance the light extraction efficiency.
1. A vertical semiconductor light emitting element comprising:
a first semiconductor layer with a plurality of nano structures thereunder having a first polarity;
an active layer on the first semiconductor layer;
a second semiconductor layer on the active layer having a second polarity opposite the first polarity;
a first electrode on some of the nano structures of the first semiconductor layer;
a second electrode on the second semiconductor layer, the second electrode including a reflective ohmic electrode on an entire area of the second semiconductor layer, and a metal layer on a portion of the reflective ohmic electrode; and
a support directly contacting the metal layer configured to support the metal layer, wherein a center portion of the second electrode is vertically aligned with a center portion of the first electrode.
2. The element of claim 1 , wherein the first semiconductor layer includes a GaN semiconductor.
3. The element of claim 1 , wherein the second semiconductor layer includes a GaN semiconductor.
4. The element of claim 1 , wherein the metal layer of the second electrode is formed at a same area corresponding to that of the first electrode.
5. The element of claim 1 , wherein a size of the metal layer of the second electrode corresponds to that of the first electrode.
6. The element of claim 1 , wherein the nano structure includes a nano rod.
7. The element of claim 6 , wherein a width of the nano rod is in the range of about 10 nm to 2,000 nm.
8. The element of claim 1 , wherein the nano structure includes a nano groove.
9. The element of claim 1 , wherein the nano structure includes a mixture of a nano rod and a nano groove.
10. The element of claim 1 , wherein the first polarity includes an n-type.
11. The element of claim 10 , wherein the second polarity includes a p-type.
12. The element of claim 1 , wherein the first electrode is positioned both on some of the nano structures and a portion of the first semiconductor layer where the nano structures are not formed.
13. The element of claim 1 , wherein the first electrode is positioned on the nano structures.
14. The element of claim 1 , wherein the first electrode is positioned on an entire area of the first semiconductor layer.
15. The element of claim 14 , wherein the first electrode is positioned on the plurality of nano structures, the nano structures comprising a plurality of nano rods, and a portion of the first semiconductor layer where the plurality of the nano rods is not formed.
16. The element of claim 1 , wherein the support is positioned on an entire area of the metal layer of the second electrode.
17. The element of claim 1 , wherein the support is positioned on a portion of the metal layer of the second electrode.
18. The element of claim 1 , wherein the first electrode is configured to supply holes and electrons to the active layer.
19. The element of claim 1 , wherein the second electrode is configured to supply holes and electrons to the active layer.