Nonvolatile semiconductor storage device
According to an aspect of the present invention, there is provided a nonvolatile semiconductor storage device including: a semiconductor substrate; a source region and a drain region that are formed in the semiconductor substrate so as to be separated from each other and so as to define a channel region therebetween; a tunnel insulating film that is formed on the channel region; an insulative charge storage film that is formed on the tunnel insulating film; a conductive charge storage film that is formed on the insulative charge storage film so as to be shorter than the insulative charge storage film in a channel direction; an interlayer insulating film that is formed on the conductive charge storage film; and a gate electrode that is formed on the interlayer insulating film.
1. A nonvolatile semiconductor storage device, comprising:
a semiconductor substrate;
a tunnel insulating film formed on a channel region;
a charge storage layer formed on the tunnel insulating film;
an interlayer insulating film formed on the charge storage layer;
a control gate formed on the interlayer insulating film; and
an insulating film insulating a side wall of the charge storage layer, wherein the charge storage layer comprises:
a conductive layer; and
an insulating layer,
wherein a width of the conductive layer is smaller than a width of the insulating layer, wherein the insulating film comprises:
a portion insulating a side wall of the insulating layer; and
a portion insulating a side wall of the conductive layer and a surface of the insulating layer at a side of the conductive layer, and
wherein the portion insulating the side wall of the insulating layer and the portion insulating the side wall of the conductive layer and the surface of the insulating layer at the side of the conductive layer comprise the same material.
2. The nonvolatile semiconductor storage device of claim 1 ,
wherein the control gate comprises a metal.
3. The nonvolatile semiconductor storage device of claim 1 ,
wherein an insulating film comprising a silicon oxide film is formed from a side portion of the conductive layer along a region corresponding to the width of the insulating layer.
4. The nonvolatile semiconductor storage device of claim 3 ,
wherein the control gate comprises a metal.
5. A nonvolatile semiconductor storage device, comprising:
a semiconductor substrate;
a tunnel insulating film formed on a channel region;
a charge storage layer formed on the tunnel insulating film;
an interlayer insulating film formed on the charge storage layer;
a control gate formed on the interlayer insulating film; and
an insulating film insulating a side wall of the charge storage layer, wherein the charge storage layer comprises:
a conductive layer comprising a polysilicon; and
an insulating layer comprising at least one of a silicon nitride and a hafnium oxide, wherein a width of the conductive layer is smaller than a width of the insulating layer, wherein the insulating film comprises:
a portion insulating a side wall of the insulating layer; and
a portion insulating a side wall of the conductive layer and a surface of the insulating layer at a side of the conductive layer, and
wherein the portion insulating the side wall of the insulating layer and the portion insulating the side wall of the conductive layer and the surface of the insulating layer at the side of the conductive layer comprise the same material.
6. The nonvolatile semiconductor storage device of claim 5
wherein the control gate comprises a metal.
7. The nonvolatile semiconductor storage device of claim 5 ,
wherein an insulating film comprising a silicon oxide film is formed from a side portion of the conductive layer along a region corresponding to the width of the insulating layer.
8. The nonvolatile semiconductor storage device of claim 7 ,
wherein the control gate comprises a metal.