IP Library Granted Patent US 8,802,570
Granted Patent B2
US 8,802,570 · App. 13/682,619 · Granted Aug 12, 2014

Pattern forming method

Inventors: Kenichi Iida (Kawasaki, JP); Toshiki Ito (Kawasaki, JP)
Assignee: Canon Kabushiki Kaisha
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Quick Facts
Patent No.
US 8,802,570
App. No.
13/682,619
Granted
Aug 12, 2014
Kind
B2
Abstract

In a pattern forming method, a pattern having at least either a recess or a protrusion of a curable composition is formed of a curable composition by curing the curable composition into a cured film with a mold having a surface provided with at least either a recess or a protrusion, and separating the mold from the curable composition. The method includes (i) forming a gas generation region containing a gas generator agent so that the gas generation region will be disposed in contact with both the mold and the cured film between the mold and the cured film, (ii) generating a gas from the gas generation region, and (iii) separating the mold from the cured film during or after the step of (ii).

Claims (34)

1. A pattern forming method for forming a pattern having at least one of a recess and a protrusion of a curable composition by curing the curable composition disposed on a work substrate into a cured film in a state where a mold having a surface provided with at least one of a recess and a protrusion is substantially in contact with the curable composition, and separating the mold from the cured film, the method comprising:

(i) forming a gas generation region containing a gas generator agent so that the gas generation region will be disposed in contact with both the mold and the cured film between the mold and the cured film;

(ii) generating a gas from the gas generation region; and

(iii) separating the mold from the cured film during or after the step of(ii),

wherein the gas generation region is formed so that the curable composition will not generate a gas in the step of (ii).

2. The pattern forming method according to claim 1 , wherein the curable composition is a photo-curable composition that will be cured by being exposed to light.

3. The pattern forming method according to claim 2 , further comprising:

applying the photo-curable composition onto the work substrate;

bringing the photo-curable composition substantially into contact with the mold; and

curing the photo-curable composition by irradiating with light the photo-curable composition substantially in contact with the mold,

wherein the gas generation region has been formed on the surface of the mold before bringing the photo-curable composition substantially into contact with the mold.

4. The pattern forming method according to claim 3 , wherein the gas generation region is bound to the surface of the mold with covalent bonds or hydrogen bonds between the gas generator agent and the surface of the mold.

5. The pattern forming method according to claim 1 , wherein the gas generator agent is a compound that will generate a gas by receiving a pressure, and the step of (ii) is performed by applying a pressure to the gas generation region.

6. The pattern forming method according to claim 5 , wherein the gas generator agent generates a gas through a chain reaction caused by receiving a pressure.

7. The pattern forming method according to claim 5 wherein the applying of a pressure is performed by bringing the work substrate and the mold close to each other.

8. A method for manufacturing a circuit board, the method comprising:

performing etching or ion implantation of the work substrate, corresponding to the pattern formed by the method as set forth in claim 1 , thereby forming a circuit configuration in the work substrate.

9. A pattern forming method for forming a pattern having at least one of a recess and a protrusion of a curable composition by curing the curable composition disposed on a work substrate into a cured film in a state where a mold having a surface provided with at least one of a recess and a protrusion is substantially in contact with the curable composition, and separating the mold from the cured film, the method comprising:

(i) forming a gas generation region containing a gas generator agent so that the gas generation region will be disposed in contact with both the mold and the cured film between the mold and the cured film;

(ii) generating a gas from the gas generation region; and

(iii) separating the mold from the cured film during or after the step of (ii),

wherein the gas generator agent is a compound that will generate a gas by receiving a pressure, and the step of (ii) is performed by applying a pressure to the gas generation region.

10. The pattern forming method according to claim 9 , wherein the gas generation region is formed so that the curable composition will not generate a gas in the step of (ii).

11. The pattern forming method according to claim 9 , wherein the curable composition is a photo-curable composition that will be cured by being exposed to light.

12. The pattern forming method according to claim 11 , further comprising:

applying the photo-curable composition onto the work substrate;

bringing the photo-curable composition substantially into contact with the mold; and

curing the photo-curable composition by irradiating with light the photo-curable composition substantially in contact with the mold,

wherein the gas generation region has been formed on the surface of the mold before bringing the photo-curable composition substantially into contact with the mold.

13. The pattern forming method according to claim 12 , wherein the gas generation region is bound to the surface of the mold with covalent bonds or hydrogen bonds between the gas generator agent and the surface of the mold.

14. The pattern forming method according to claim 9 , wherein the gas generator agent generates a gas through a chain reaction caused by receiving a pressure.

15. The pattern forming method according to claim 9 , wherein the applying of a pressure is performed by bringing the work substrate and the mold close to each other.

16. A method for manufacturing a circuit board, the method comprising:

performing etching or ion implantation of the work substrate, corresponding to the pattern formed by the method as set forth in claim 9 , thereby forming a circuit configuration in the work substrate.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 28, 2013
From: IIDA, KENICHI; ITO, TOSHIKI
To: CANON KABUSHIKI KAISHA
Reel/Frame 030101/0460 →
Priority Claims (1)
JP 2011-259272 · Nov 28, 2011 · national
Continuity (1)
Related Publication 20130137252A1 · May 30, 2013