Semiconductor light emitting device
A semiconductor light emitting device is provided that includes a support substrate, a first metal layer formed on the support substrate, a transparent conductive layer formed on the first metal layer, a second metal layer embedded in the transparent conductive layer, and a semiconductor light emitting layer formed on the transparent conductive layer. A reflectance of the second metal layer to light emitted by the semiconductor light emitting layer is higher than a reflectance of the first metal layer to light emitted by the semiconductor light emitting layer.
1. A semiconductor light emitting device, comprising:
a support substrate;
a first metal layer formed on the support substrate;
a transparent conductive layer formed on the first metal layer;
a second metal layer embedded in the transparent conductive layer, such that edges of the second metal layer are not exposed; and
a semiconductor light emitting layer formed on the transparent conductive layer.
2. The semiconductor light emitting device according to claim 1 , wherein a reflectance of the second metal layer to light emitted by the semiconductor light emitting layer is higher than a reflectance of the first metal layer to light emitted by the semiconductor light emitting layer.
3. The semiconductor light emitting device according to claim 2 , wherein an entire edge of the second metal layer is covered by the transparent conductive layer.
4. The semiconductor light emitting device according to claim 3 , wherein the second metal layer is continuously formed within the transparent conductive layer.
5. The semiconductor light emitting device according to claim 3 , further comprising a transparent insulating layer selectively formed between the transparent conductive layer and the semiconductor light emitting layer, wherein the transparent conductive layer is connected to the semiconductor light emitting layer in areas where the transparent insulating layer are not formed, and the second metal layer is present directly below the areas where the transparent insulating layer are not formed.
6. The semiconductor light emitting device according to claim 5 , wherein the second metal layer has a plurality of separate sections each present directly below one of the areas where the transparent insulating layer are not formed.
7. The semiconductor light emitting device according to claim 1 , wherein the first metal layer is a binding metal layer including gold, and wherein the transparent conductive layer includes indium-tin-oxide and the second metal layer includes one of silver and a silver alloy.
8. A semiconductor light emitting device, comprising:
a support substrate;
a first metal layer formed on the support substrate;
a transparent conductive layer formed on the first metal layer;
a second metal layer embedded in the transparent conductive layer, a width of the second metal layer being less than a width of the first metal layer; and
a semiconductor light emitting layer formed on the transparent conductive layer.
9. The semiconductor light emitting device according to claim 8 , wherein a reflectance of the second metal layer to light emitted by the semiconductor light emitting layer is higher than a reflectance of the first metal layer to light emitted by the semiconductor light emitting layer.
10. The semiconductor light emitting device according to claim 8 , wherein the second metal layer is continuously formed within the transparent conductive layer.
11. The semiconductor light emitting device according to claim 8 , wherein the second metal layer is formed as a plurality of physically separate sections.
12. The semiconductor light emitting device according to claim 11 , wherein each of the physically separate sections has one of a square-plate shape, a rectangular plate shape, and a circular plate shape.
13. A method of manufacturing a semiconductor light emitting device, the method comprising:
forming a support substrate;
forming a first metal layer on the support substrate;
forming a second metal layer on the first metal layer to have a width that is narrower than that of the first metal layer; and
forming a transparent conductive layer on the second metal layer and on the first metal layer around edges of the second metal layer; and
forming a semiconductor light emitting layer on the transparent conductive layer.
14. The method of claim 13 , wherein a reflectance of the second metal layer to light emitted by the semiconductor light emitting layer is higher than a reflectance of the first metal layer to light emitted by the semiconductor light emitting layer.
15. The method of claim 13 , wherein said forming the second metal layer having a width that is narrower than that of the first metal layer includes:
forming the second metal layer on the first metal layer to have a same width as that of the first metal layer; and
etching edge portions of the second metal layer.
16. The method of claim 13 , wherein the second metal layer is formed as a plurality of physically separate sections.
17. The method of claim 16 , wherein each of the physically separate sections has one of a square-plate shape, a rectangular plate shape, and a circular plate shape.
18. The method of claim 16 , further comprising selectively forming a transparent insulating layer between the transparent conductive layer and the semiconductor light emitting layer, wherein the transparent conductive layer is connected to the semiconductor light emitting layer in areas where the transparent insulating layer is not formed, and each of the sections of the second metal layer is formed directly below one of the areas where the transparent insulating layer are not formed.
19. The method of claim 18 , wherein the transparent insulating layer includes an undoped oxide.
20. The method of claim 13 , wherein the first metal layer is a binding metal layer including gold, and wherein the transparent conductive layer includes indium-tin-oxide, and the second metal layer includes one of silver and a silver alloy.