High-frequency module and communication apparatus
A semiconductor component is face-up mounted on a package substrate. An antenna substrate is flip-chip mounted on a front side of the semiconductor component. A device-side high-frequency signal terminal is disposed on the front side of the semiconductor component, and an antenna-side high-frequency signal terminal is disposed on a back side of the antenna substrate. The device-side high-frequency signal terminal and the antenna-side high-frequency signal terminal are electrically connected to each other. Thus, the antenna substrate for high-frequency signals can be separated from the package substrate for baseband signals.
1. A high-frequency module comprising:
a package substrate formed of a dielectric material, the package substrate having substrate-side direct-current voltage terminals configured to output a direct-current voltage, substrate-side baseband signal terminals configured to input or output baseband signals, and external connection terminals for connection to an external circuit;
a semiconductor component including a functional circuit unit having at least one of a function of modulating a baseband signal into a high-frequency signal and a function of demodulating a high-frequency signal into a baseband signal, device-side direct-current voltage terminals to which a direct-current voltage for driving is input, device-side baseband signal terminals configured to input or output baseband signals, and a device-side high-frequency signal terminal located on the same front side of the semiconductor component as the functional circuit unit and configured to input or output high-frequency signals; and
an antenna substrate formed using a dielectric material, the antenna substrate having an antenna element on a front side thereof and an antenna-side high-frequency signal terminal on a back side thereof, the antenna-side high-frequency signal terminal being configured to input or output high-frequency signals,
wherein the semiconductor component is face-up mounted on the package substrate with a back side thereof facing the package substrate, and the device-side direct-current voltage terminals and the device-side baseband signal terminals are electrically connected to the substrate-side direct-current voltage terminals and the substrate-side baseband signal terminals, respectively; and
the antenna substrate is flip-chip mounted on the front side of the semiconductor component, and the antenna-side high-frequency signal terminal is electrically connected to the device-side high-frequency signal terminal on the front side of the semiconductor component.
2. The high-frequency module according to claim 1 , wherein the device-side direct-current voltage terminals and the device-side baseband signal terminals of the semiconductor component and the substrate-side direct-current voltage terminals and the substrate-side baseband signal terminals of the package substrate are electrically connected to each other through bonding wires.
3. The high-frequency module according to claim 1 , wherein the semiconductor component has vias extending from the front side where the functional circuit unit is located to the back side;
the device-side direct-current voltage terminals and the device-side baseband signal terminals of the semiconductor component are located on the back side of the semiconductor component and electrically connected through the vias to the functional circuit unit; and
the device-side direct-current voltage terminals and the device-side baseband signal terminals of the semiconductor component and the substrate-side direct-current voltage terminals and the substrate-side baseband signal terminals of the package substrate are electrically connected to each other through bumps.
4. The high-frequency module according to claim 1 , wherein the antenna substrate includes a passive circuit portion electrically connected between the antenna element and the antenna-side high-frequency signal terminal and configured to process high-frequency signals.
5. The high-frequency module according to claim 2 , wherein the antenna substrate includes a passive circuit portion electrically connected between the antenna element and the antenna-side high-frequency signal terminal and configured to process high-frequency signals.
6. The high-frequency module according to claim 3 , wherein the antenna substrate includes a passive circuit portion electrically connected between the antenna element and the antenna-side high-frequency signal terminal and configured to process high-frequency signals.
7. The high-frequency module according to claim 1 , wherein the antenna element is configured to transmit or receive high-frequency signals in a microwave band or a millimeter wave band.
8. The high-frequency module according to claim 2 , wherein the antenna element is configured to transmit or receive high-frequency signals in a microwave band or a millimeter wave band.
9. The high-frequency module according to claim 3 , wherein the antenna element is configured to transmit or receive high-frequency signals in a microwave band or a millimeter wave band.
10. The high-frequency module according to claim 1 , wherein the front side of the package substrate is sealed with a resin material that covers the semiconductor component.
11. The high-frequency module according to claim 2 , wherein the front side of the package substrate is sealed with a resin material that covers the semiconductor component.
12. The high-frequency module according to claim 3 , wherein the front side of the package substrate is sealed with a resin material that covers the semiconductor component.
13. A communication apparatus comprising a high-frequency module according to claim 1 .
14. A communication apparatus comprising a high-frequency module according to claim 2 .
15. A communication apparatus comprising a high-frequency module according to claim 3 .