Method for strengthening adhesion between dielectric layers formed adjacent to metal layers
A method is provided which includes forming a metal layer and converting at least a portion of the metal layer to a hydrated metal oxide layer. Another method is provided which includes selectively depositing a dielectric layer upon another dielectric layer and selectively depositing a metal layer adjacent to the dielectric layer. Consequently, a microelectronic topography is formed which includes a metal feature and an adjacent dielectric portion comprising lower and upper layers of hydrophilic and hydrophobic material, respectively. A topography including a metal feature having a single layer with at least four elements lining a lower surface and sidewalls of the metal feature is also provided herein. The fluid/s used to form such a single layer may be analyzed by test equipment configured to measure the concentration of all four elements. In some cases, the composition of the fluid/s may be adjusted based upon the analysis.
1. A method for processing a microelectronic topography, comprising:
depositing a multiple layer barrier film upon the microelectronic topography;
hydrating more than one layer of the deposited multiple layer barrier film to form a hydrated oxide sub-layer;
depositing a first metal layer above the hydrated oxide sub-layer using an electroless deposition process; and
dehydrating the hydrated oxide sub-layer subsequent to the step of depositing the first metal layer.
2. The method of claim 1 , wherein the step of depositing the layer metal barrier film comprises sequentially depositing materials selected from a group consisting of tantalum, tantalum nitride, tantalum silicon nitride, tantalum carbon nitride, titanium, titanium nitride, titanium silicon nitride, tungsten, tungsten nitride, silicon nitride, silicon carbide, silicon carbon nitride, silicon oxycarbide, and silicon oxycarbon nitride.
3. The method of claim 1 , wherein the step of depositing the multiple layer barrier film comprises depositing a layer of silicon oxycarbide or silicon oxycarbon nitride.
4. The method of claim 1 , wherein the step of depositing the layer metal barrier film comprises lining a trench of a microelectronic topography with the layer metal barrier film and wherein the step of depositing the first metal layer comprises filling a substantial portion of the trench.
5. The method of claim 1 , further comprising depositing an activation seed layer upon the hydrated oxide sub-layer prior to the step of depositing the first metal layer.
6. The method of claim 1 , wherein the step of depositing the first metal layer comprises depositing the first metal layer directly upon and in contact with the oxide sub-layer.