IP Library › Granted Patent US 8,808,917
Granted Patent B2
US 8,808,917 · App. 12/871,974 · Granted Aug 19, 2014

Power storage device having olivine type positive electrode active material with oriented crystal structure

Inventors: Satoshi Murakami (Kanagawa, JP); Takahiro Kawakami (Kanagawa, JP)
Assignee: Semiconductor Energy Laboratory Co., Ltd.
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Quick Facts
Patent No.
US 8,808,917
App. No.
12/871,974
Granted
Aug 19, 2014
Kind
B2
Abstract

An object is to increase the amount of ions capable of leaving and entering an active material so as to increase capacity of a secondary battery. The present invention relates to a manufacturing method of a power storage device including a positive electrode active material formed using a composite oxide containing at least alkali metal and transition metal. The method includes the steps of: forming a base layer over a support substrate; forming a layer of lithium iron phosphate or a layer of sodium iron phosphate over the base layer; and using a layer of single crystalline lithium iron phosphate having an olivine structure or a layer of single crystalline sodium iron phosphate having an olivine structure with crystal axes oriented in a <010> direction as the positive electrode material by converting the layer of lithium iron phosphate or the layer of sodium iron phosphate by a heat treatment.

Claims (18)

1. A power storage device comprising:

a positive electrode including a positive electrode active material layer and a positive electrode current collector, the positive electrode active material layer in contact with a base layer over a support substrate and comprising single crystalline sodium iron phosphate layer having an olivine structure with a crystal axis oriented in a <010> direction;

a negative electrode including a negative electrode active material and a negative electrode current collector; and

a separator provided between the positive electrode and the negative electrode,

wherein a lattice constant of the base layer is equivalent to that of the single crystalline sodium iron phosphate layer.

2. The power storage device according to claim 1 , wherein the base layer is formed using a material selected from the group consisting of β-Ta, Cu 2 [Cd 0.79 Fe 0.17 Mn 0.04 ]GeS 4 , Cu 2 FeGeS 4 , CuFeS 2 , CuGaS 2 , Cu 3 [As 0.644 Sb 0.356 ]S 4 , Cu 9 Fe 9 S 16 , CaV 3 O 7 , WO 3 .H 2 O, Fe 2 SiO 4 , Mg 2 SiO 4 , Li 3 PO 4 , Cu 3 Fe 4 [VO 4 ] 6 , [Fe 0.292 Mg 0.708 ] 2 SiO 4 , NaSiO 3 , and LiAlSiO 4 .H 2 O.

3. The power storage device according to claim 1 , wherein the support substrate is selected from the group consisting of a silicon substrate, a sapphire substrate, a glass substrate and a ceramic substrate.

4. The power storage device according to claim 1 , wherein the support substrate is a silicon substrate, and the base layer is formed over a (100) plane of the silicon substrate.

5. The power storage device according to claim 1 further comprising an electrolyte, wherein the positive electrode and the negative electrode and the separator are provided in the electrolyte.

6. A power storage device comprising:

a positive electrode including a positive electrode active material layer and a positive electrode current collector, the positive electrode active material layer in contact with a base layer over a support substrate and comprising single crystalline lithium iron phosphate layer having an olivine structure with a crystal axis oriented in a <010> direction;

a negative electrode including a negative electrode active material and a negative electrode current collector; and

a separator provided between the positive electrode and the negative electrode,

wherein a lattice constant of the base layer is equivalent to that of the single crystalline lithium iron phosphate layer.

7. The power storage device according to claim 6 , wherein the base layer is formed using a material selected from the group consisting of β-Ta, Cu 2 [Cd 0.79 Fe 0.17 Mn 0.04 ]GeS 4 , Cu 2 FeGeS 4 , CuFeS 2 , CuGaS 2 , Cu 3 [As 0.644 Sb 0.356 ]S 4 , Cu 9 Fe 9 S 16 , CaV 3 O 7 , WO 3 .H 2 O, Fe 2 SiO 4 , Mg 2 SiO 4 , Li 3 PO 4 , Cu 3 Fe 4 [VO 4 ] 6 , [Fe 0.292 Mg 0.708 ] 2 SiO 4 , NaSiO 3 , and LiAlSiO 4 .H 2 O.

8. The power storage device according to claim 6 , wherein the support substrate is selected from the group consisting of a silicon substrate, a sapphire substrate, a glass substrate and a ceramic substrate.

9. The power storage device according to claim 6 , wherein the support substrate is a silicon substrate, and the base layer is formed over a (100) plane of the silicon substrate.

10. The power storage device according to claim 6 further comprising an electrolyte, wherein the positive electrode and the negative electrode and the separator are provided in the electrolyte.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 31, 2010
From: MURAKAMI, SATOSHI; KAWAKAMI, TAKAHIRO
To: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Reel/Frame 024914/0688 →
Priority Claims (1)
JP 2009-210242 · Sep 11, 2009 · national
Continuity (1)
Related Publication 20110065004A1 · Mar 17, 2011