Nanoneedle plasmonic photodetectors and solar cells
The present disclosure provides a catalyst-free growth mode of defect-free Gallium Arsenide (GaAs)-based nanoneedles on silicon (Si) substrates with a complementary metal-oxide-semiconductor (CMOS)-compatible growth temperature of around 400° C. Each nanoneedle has a sharp 2 to 5 nanometer (nm) tip, a 600 nm wide base and a 4 micrometer (μm) length. Thus, the disclosed nanoneedles are substantially hexagonal needle-like crystal structures that assume a 6° to 9° tapered shape. The 600 nm wide base allows the typical micro-fabrication processes, such as optical lithography, to be applied. Therefore, nanoneedles are an ideal platform for the integration of optoelectronic devices on Si substrates. A nanoneedle avalanche photodiode (APD) grown on silicon is presented in this disclosure as a device application example. The APD attains a high current gain of 265 with only 8V bias.
1. A photodetector device comprising:
a substrate;
a nanostructure having a hexagonal pyramid shaped core attached to and grown on the substrate, wherein the hexagonal pyramid shaped core has an exposed portion for absorbing photons;
a shell section deposited on a top portion of the hexagonal pyramid shaped core that is opposed to the exposed portion of the hexagonal pyramid shaped core, wherein the shell section creates a p-n junction with at least one face of the hexagonal pyramid shaped core;
a top metal contact deposited on at least one contiguous face of the shell section such that a triangular shadow extends out from a lower portion of the hexagonal pyramid shaped core; and
a bottom metal contact deposited on the substrate.
2. The photodetector device of claim 1 further including an insulating layer applied to the substrate surrounding the hexagonal pyramid shaped core.
3. The photodetector device of claim 1 wherein the hexagonal pyramid shaped core of the nanostructure is made of group III-V atoms.
4. The photodetector device of claim 3 wherein the substrate is made of silicon (Si).
5. The photodetector device of claim 4 wherein the silicon (Si) has a crystalline structure having a crystal lattice mismatch with the group III-V atoms making up the hexagonal pyramid shaped core of the nanostructure.
6. The photodetector device of claim 3 wherein the substrate is made of sapphire.
7. The photodetector device of claim 6 wherein the sapphire has a crystalline structure having a crystal lattice mismatch with the group III-V atoms making up the hexagonal pyramid shaped core of the nanostructure.
8. The photodetector device of claim 1 wherein the nanostructure is a nanoneedle.
9. The photodetector device of claim 8 wherein the nanoneedle has a taper angle range of 1° to 30°.
10. The photodetector device of claim 8 wherein the nanoneedle has a taper angle range of about 6° to 9°.
11. The photodetector device of claim 1 wherein the nanostructure is a nanopillar.
12. The photodetector device of claim 2 wherein the insulating layer has a thickness sufficient to cover at least one-half of the hexagonal pyramid shaped core of the nanostructure.
13. The photodetector device of claim 12 wherein the insulating layer is made of spin-on-glass.
14. The photodetector device of claim 12 wherein the insulating layer is made of benzocyclobutene (BCB).
15. A solar cell comprising:
a substrate;
a plurality of nanoneedle devices fabricated from nanostructures, each of the nanostructures having a hexagonal pyramid shaped core attached to and grown on the substrate, wherein each hexagonal pyramid shaped core has an exposed portion for absorbing photons;
a shell section deposited on a top portion of each hexagonal pyramid shaped core that is opposed to the exposed portion of each hexagonal pyramid shaped core, wherein each shell section creates a p-n junction with at least one face of each respective hexagonal pyramid shaped core;
a bottom metal contact deposited on the substrate; and
a top metal contact deposited on at least one contiguous face of each shell section such that a triangular shadow extends out from a lower portion of each hexagonal pyramid shaped core.
16. The solar cell of claim 15 further including an insulating layer applied to the substrate and surrounding each hexagonal pyramid shaped core of the nanostructures.
17. The solar cell of claim 16 wherein the top metal contact is further deposited on the insulating layer to couple the plurality of nanoneedle devices together.
18. The solar cell of claim 15 wherein each hexagonal pyramid shaped core of the nanostructures are made of group III-V atoms.
19. The solar cell of claim 18 wherein the substrate is made of silicon (Si).
20. The solar cell of claim 19 wherein the silicon (Si) has a crystalline structure having a crystal lattice mismatch with the group III-V atoms making up the nanostructures.
21. The solar cell of claim 15 wherein the nanostructures are nanoneedles.
22. The solar cell of claim 21 wherein the nanoneedles each have a taper angle range of about 6° to 9°.
23. The solar cell of claim 16 wherein the insulating layer has a thickness sufficient to cover at least one-half of each hexagonal pyramid shaped core of the nano structures.
24. The solar cell of claim 16 wherein the insulating layer is made of spin-on-glass.
25. The solar cell of claim 16 wherein the insulating layer is made of benzocyclobutene (BCB).
26. The photodetector device of claim 1 wherein the hexagonal pyramid shaped core has a base width of at least on the order of 600 nm.
27. The photodetector device of claim 1 wherein the top metal contact deposited on at least one contiguous face of the shell section provides sub-diffraction confinement of an electric field that penetrates the hexagonal pyramid shaped core.
28. The solar cell of claim 15 wherein the top metal contact deposited on at least one contiguous face of the shell section provides sub-diffraction confinement of an electric field that penetrates the hexagonal pyramid shaped core.