Compact endocavity diagnostic probes for nuclear radiation detection
This invention relates to the field of radiation imaging. In particular, the invention relates to an apparatus and a method for imaging tissue or an inanimate object using a novel probe that has an integrated solid-state semiconductor detector and complete readout electronics circuitry.
1. A radiation imaging probe contained within a probe sheath, comprising:
a plurality of semiconductor detectors configured as an orthogonal strip detector;
a signal processing circuit attached to the plurality of semiconductor detectors to read out and process the signal produced by the detectors due to an absorption of the radiation; and
a power supply and associated power supply circuits;
wherein the plurality of semiconductor detectors is operable to detect x-ray or gamma ray radiation.
2. A radiation imaging probe contained within a probe sheath, comprising:
a plurality of semiconductor detectors configured in an array of individual detectors;
a signal processing circuit attached to the plurality of semiconductor detectors to read out and process the signal produced by the detectors due to an absorption of the radiation; and
a power supply and associated power supply circuits;
wherein the array of individual detectors is a virtual Frisch-grid detector array; and
wherein the plurality of semiconductor detectors is operable to detect x-ray or gamma ray radiation.
3. A radiation imaging probe contained within a probe sheath, comprising:
a plurality of semiconductor detectors wherein each of the plurality of semiconductor detectors include a semiconductor made from a compound of elements of groups III and V of the periodic table, of elements of groups II and VI of the periodic table, and of elements or alloys of group IV of the periodic table;
a signal processing circuit attached to the plurality of semiconductor detectors to read out and process the signal produced by the detectors due to an absorption of the radiation; and
a power supply and associated power supply circuits;
wherein the plurality of semiconductor detectors is operable to detect x-ray or gamma ray radiation.
4. The radiation imaging probe of claim 3 , where the semiconductor is a single element crystal.
5. The radiation imaging probe of claim 3 , wherein the semiconductor is a binary compound.
6. The radiation imaging probe of claim 3 , wherein the semiconductor is aternary compound or alloy.
7. The radiation imaging probe of claim 3 , wherein the semiconductor comprises CdZnTe, CdTe, CdMnTe, HgI 2 , or TlBr.
8. The radiation imaging probe of claim 7 , wherein the semiconductor is CdZnTe.
9. A radiation imaging probe contained within a probe sheath, comprising:
plurality of semiconductor detectors;
a collimator positioned on top of the plurality of semiconductor detectors;
a signal processing circuit, including a front-end electronic implemented as an application-specific integrated circuit (ASIC), attached to the plurality of semiconductor detectors to read out and process the signal produced by the detectors due to an absorption of the radiation; and
a power supply and associated power supply circuits;
wherein the plurality of radiation detectors is mounted directly on the ASIC; and
wherein the plurality of semiconductor detectors is operable to detect x-ray or gamma ray radiation.
10. The radiation imaging probe of claim 9 , wherein connections between the semiconductor detector and ASIC use bump-bonding.