Light emitting diode with graphene layer

1. A light emitting diode, comprising:

a substrate comprising an epitaxial growth surface;

a semiconductor epitaxial layer on the epitaxial growth surface, wherein the semiconductor epitaxial layer comprises a first semiconductor layer, an active layer, and a second semiconductor layer stacked on the substrate, the active layer is between the first and the second semiconductor layer, and the first semiconductor layer is on the epitaxial growth surface of the substrate;

a first electrode electrically connected with the second semiconductor layer;

a second electrode electrically connected with the first semiconductor layer;

a reflection layer covering the second semiconductor layer; and

a graphene layer fully enclosed in at least one of the first semiconductor layer and the second semiconductor layer, wherein the graphene layer is suspended above and spaced from the epitaxial growth surface.

2. The light emitting diode of claim 1 , wherein the graphene layer is a structure consisting of graphene.

3. The light emitting diode of claim 1 , wherein a thickness of the graphene layer is in a range from about 1 nanometer to about 100 micrometers.

4. The light emitting diode of claim 1 , wherein the graphene layer comprises a grapheme film consisting of a single layer of continuous carbon atoms.

5. The light emitting diode of claim 4 , wherein the graphene layer has a thickness of a thickness of a single layer of carbon atoms.

6. The light emitting diode of claim 1 , wherein the graphene layer is a coating comprising graphene powders.

7. The light emitting diode of claim 1 , wherein the graphene layer is patterned and defines a plurality of apertures.

8. The light emitting diode of claim 7 , wherein sizes of the plurality of apertures are in a range from about 10 nanometers to about 500 micrometers.

9. The light emitting diode of claim 7 , wherein a dutyfactor of the graphene layer is in a range from about 1:100 to about 100:1, wherein the dutyfactor is an area ratio between a covered area to an exposed area of the epitaxial growth surface.

10. The light emitting diode of claim 1 , wherein the first electrode is opaque, and the reflection layer is located between the first electrode and the second semiconductor layer.

11. The light emitting diode of claim 1 , wherein the first electrode is transparent and covers an entirety of the second semiconductor layer, the reflection layer is located on a surface of the first electrode away from the second semiconductor layer.

12. The light emitting diode of claim 7 , wherein the graphene layer is enclosed in the first semiconductor layer, and the first semiconductor layer extends through the plurality of apertures and is in direct contact with the epitaxial growth surface of the substrate.

13. The light emitting diode of claim 12 , wherein the first semiconductor layer defines a plurality of chambers, and the graphene layer is received in the plurality of chambers.

14. The light emitting diode of claim 1 , further comprising a second graphene layer between the active layer and the first semiconductor layer, the second graphene layer defines a plurality of second apertures, and the first semiconductor layer extends through the plurality of second apertures and is in direct contact with the active layer.

15. The light emitting diode of claim 1 , further comprising a third graphene layer between the active layer and the second semiconductor layer, the third graphene layer defines a plurality of third apertures, and the second semiconductor layer extends through the plurality of third apertures and is in direct contact with the active layer.

16. The light emitting diode of claim 1 , further comprising a fourth graphene layer on a surface of the second semiconductor layer away from the active layer.

17. The light emitting diode of claim 1 , wherein each of the first semiconductor layer and the second semiconductor layer is made of a single material.