IP Library › Granted Patent US 8,822,088
Granted Patent B2
US 8,822,088 · App. 13/610,951 · Granted Sep 2, 2014

Power storage device

Inventors: Ryota Tajima (Kanagawa, JP); Shunpei Yamazaki (Tokyo, JP); Teppei Oguni (Kanagawa, JP); Takeshi Osada (Kanagawa, JP); Shinya Sasagawa (Kanagawa, JP); Kazutaka Kuriki (Kanagawa, JP)
Assignee: Semiconductor Energy Laboratory Co., Ltd.
B82Y30/00H01M10/465H01M10/0525Y02E60/122H01M4/625H01M4/366H01M4/1395H01M4/386H01M4/134
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Quick Facts
Patent No.
US 8,822,088
App. No.
13/610,951
Granted
Sep 2, 2014
Kind
B2
Abstract

A power storage device which has high charge/discharge capacity and less deterioration in battery characteristics due to charge/discharge and can perform charge/discharge at high speed is provided. A power storage device includes a negative electrode. The negative electrode includes a current collector and an active material layer provided over the current collector. The active material layer includes a plurality of protrusions protruding from the current collector and a graphene provided over the plurality of protrusions. Axes of the plurality of protrusions are oriented in the same direction. A common portion may be provided between the current collector and the plurality of protrusions.

Claims (37)

1. A power storage device comprising a negative electrode,

the negative electrode comprising:

an active material layer comprising:

a common portion; and

a plurality of protrusions protruding from the common portion, and

a layer including a graphene over the common portion and the plurality of protrusions.

2. The power storage device according to claim 1 , wherein axes of the plurality of protrusions are oriented in a same direction.

3. The power storage device according to claim 1 , wherein in a lateral cross-sectional shape, an area of a bottom portion of each of the plurality of protrusions which is in contact with the common portion is larger than an area of a top portion of each of the plurality of protrusions.

4. The power storage device according to claim 1 , wherein in a longitudinal cross-sectional shape, a width of a bottom portion of each of the plurality of protrusions which is in contact with the common portion is larger than a width of a top portion of each of the plurality of protrusions.

5. The power storage device according to claim 1 , wherein the common portion or the plurality of protrusions comprise silicon.

6. The power storage device according to claim 1 , wherein the plurality of protrusions each have a columnar shape, a conical or pyramidal shape, a plate-like shape, or a pipe-like shape.

7. The power storage device according to claim 1 , further comprising a protective layer between a top portion of each of the plurality of protrusions and the graphene.

8. The power storage device according to claim 1 , further comprising an insulating layer over the graphene of the negative electrode.

9. A power storage device comprising a negative electrode,

the negative electrode comprising:

a current collector;

a plurality of protrusions over the current collector; and

a layer including a graphene over the current collector and the plurality of protrusions,

wherein each of the plurality of protrusions comprises an active material.

10. The power storage device according to claim 9 , wherein axes of the plurality of protrusions are oriented in a same direction.

11. The power storage device according to claim 9 , wherein in a lateral cross-sectional shape, an area of a bottom portion of each of the plurality of protrusions which is in contact with the current collector is larger than an area of a top portion of each of the plurality of protrusions.

12. The power storage device according to claim 9 , wherein in a longitudinal cross-sectional shape, a width of a bottom portion of each of the plurality of protrusions which is in contact with the current collector is larger than a width of a top portion of each of the plurality of protrusions.

13. The power storage device according to claim 9 , wherein the plurality of protrusions each have a columnar shape, a conical or pyramidal shape, a plate-like shape, or a pipe-like shape.

14. The power storage device according to claim 9 , further comprising a protective layer between a top portion of each of the plurality of protrusions and the graphene.

15. The power storage device according to claim 9 , further comprising an insulating layer over the graphene of the negative electrode.

16. The power storage device according to claim 1 , further comprising a current collector in contact with the active material layer.

17. The power storage device according to claim 1 , the plurality of protrusions are formed by etching.

18. The power storage device according to claim 9 , the plurality of protrusions are formed by etching.

19. The power storage device according to claim 9 , wherein the active material comprises silicon.

20. The power storage device according to claim 19 , wherein the plurality of protrusions comprises phosphorus or boron as an impurity.

21. The power storage device according to claim 9 , wherein the plurality of protrusions has translation symmetry.

22. The power storage device according to claim 1 , wherein in a longitudinal cross-sectional shape, a width of a bottom portion of each of the plurality of protrusions which is in contact with the common portion is 0.1 to 1 μm.

23. The power storage device according to claim 20 , further comprising a second protrusion over and in contact with each of the plurality of protrusions, and

wherein the second protrusion has translation symmetry.

24. The power storage device according to claim 9 ,

wherein the plurality of protrusions each have a prismatic or pyramidal shape, and

wherein a top or an edge of each of the plurality of protrusions is curved.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 12, 2012
From: TAJIMA, RYOTA; YAMAZAKI, SHUNPEI; OGUNI, TEPPEI; OSADA, TAKESHI; SASAGAWA, SHINYA; KURIKI, KAZUTAKA
To: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Reel/Frame 028942/0431 →
Priority Claims (3)
JP 2011-203579 · Sep 16, 2011 · national
JP 2011-207692 · Sep 22, 2011 · national
JP 2011-217646 · Sep 30, 2011 · national
Continuity (1)
Related Publication 20130071762A1 · Mar 21, 2013