Polycrystalline CDTE thin film semiconductor photovoltaic cell structures for use in solar electricity generation
A reverse p-n junction solar cell device and methods for forming the reverse p-n junction solar cell device are described. A variety of n-p junction and reverse p-n junction solar cell devices and related methods of manufacturing are provided. N-intrinsic-p junction and reverse p-intrinsic-n junction solar cell devices are also described.
1. A photovoltaic device, comprising:
a glass substrate or superstrate;
a first layer adjacent to said glass superstrate or substrate, said first layer comprising tellurium (Te) and cadmium (Cd), wherein said first layer is doped n-type;
a second layer adjacent to said first layer, said second layer comprising Cd and Te, wherein said second layer is doped p-type; and
a third layer adjacent to said second layer, said third layer comprising Cd and Te, wherein said third layer is doped n-type or p-type.
2. The photovoltaic device of claim 1 , further comprising a fourth layer comprising Zn between said glass substrate or superstrate and said first layer.
3. The photovoltaic device of claim 1 , further comprising a fourth layer adjacent to said third layer, said fourth layer comprising Te.
4. The photovoltaic device of claim 3 , further comprising a metal contact adjacent to said fourth layer.
5. The photovoltaic device of claim 3 , wherein said fourth layer further comprises Cd.
6. The photovoltaic device of claim 3 , wherein said third layer is doped n-type and said fourth layer is doped p-type.
7. The photovoltaic device of claim 1 , wherein one or more of said first layer, second layer and third layer further comprise zinc.
8. The photovoltaic device of claim 1 , further comprising a p-n or n-p tunnel junction between said second layer and said third layer.
9. The photovoltaic device of claim 1 , further comprising a fourth layer comprising Sb adjacent to said third layer.
10. The photovoltaic device of claim 1 , wherein one or more of said first layer, second layer and third layer are compositionally graded in Cd.
11. The photovoltaic device of claim 1 , further comprising a metal contact adjacent to said third layer.
12. A photovoltaic device, comprising:
a glass substrate or superstrate;
a first layer adjacent to said glass superstrate or substrate, the first layer comprising cadmium (Cd) and tellurium (Te), wherein the first layer is doped n-type;
a second layer adjacent to the first layer, the second layer comprising Cd and Te, wherein the second layer is doped p-type; and
a third layer formed of an n-p or p-n heterojunction or homojunction adjacent to said second layer, wherein said third layer is configured to generate electricity upon exposure to light.
13. The photovoltaic device of claim 12 , further comprising a fourth layer comprising Zn between said glass substrate or superstrate and said first layer.
14. The photovoltaic device of claim 12 , wherein said third layer is formed of a heterojunction.
15. The photovoltaic device of claim 12 , wherein one or more of said first layer, second layer and third layer further comprise zinc.
16. The photovoltaic device of claim 12 , further comprising a p-n or n-p tunnel junction between said second layer and said third layer.
17. The photovoltaic device of claim 12 , further comprising a fourth layer comprising Sb adjacent to said third layer.
18. The photovoltaic device of claim 12 , further comprising a fourth layer comprising Te adjacent to said third layer.
19. The photovoltaic device of claim 12 , wherein one or more of said first layer, second layer and third layer are compositionally graded in Cd.
20. The photovoltaic device of claim 12 , further comprising a metal contact adjacent to said third layer.